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STMicroelectronics STTH12012TV2
- Part No.:
- STTH12012TV2
- Manufacturer:
- STMicroelectronics
- Category:
- Diode Arrays
- Package:
- ISOTOP
- Datasheet:
-
STTH12012TV2.pdf
- Description:
- DIODE MODULE GP 1200V 60A ISOTOP
- Quantity:
- Payment:
- Shipping:
Inventory:3,511
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Product details
Overview
STTH12012TV2 from STMicroelectronics is a 1200 V, 60 A ultrafast recovery dual diode in ISOTOP package, featuring 50 ns typical reverse recovery time (trr), 1.30 V typical forward voltage at 150 °C, and 2500 VRMS electrical insulation. It serves as a high-reliability rectifier and freewheeling diode in industrial power supplies and motor control inverters operating up to 150 °C junction temperature.
For engineers reviewing the STTH12012TV2 datasheet, STTH12012TV2 pinout, STTH12012TV2 application, or STTH12012TV2 equivalent, key selection criteria include soft recovery behavior (S factor = 1), low leakage (<300 µA at 125 °C), and validated performance under high dIF/dt (–200 A/µs) with 600 V reverse bias - critical for snubber and bootstrap circuits in high-frequency IGBT/MOSFET gate drives.
Technical Context
This dual-diode device integrates two independent ultrafast silicon rectifiers in a single insulated ISOTOP housing, enabling symmetrical current sharing and thermal coupling between channels. Its soft recovery minimizes EMI during commutation, while low Qrr (typ. 8 µC at IF = 60 A) reduces switching losses in hard-switched topologies.
The diode is characterized for simultaneous conduction: junction-to-case thermal resistance is 0.74 °C/W per diode, and coupling resistance between dies is 0.1 °C/W. Dynamic parameters are specified at Tj = 125 °C and VR = 600 V, reflecting real-world operation in high-power converters where thermal stress dominates reliability.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 1200 V - supports DC bus voltages up to 850 V in three-phase rectifiers with 1.4× safety margin. |
| IF(AV) per diode | 60 A at Tc = 45 °C - enables continuous 120 A total forward current handling in dual configuration with forced-air cooling. |
| trr (typ) | 50 ns at IF = 1 A, dIF/dt = –200 A/µs, VR = 30 V, Tj = 25 °C - ensures minimal turn-off tail current in 100 kHz+ SMPS designs. |
| VF (typ) | 1.30 V at IF = 60 A, Tj = 150 °C - reduces conduction loss to ~78 W per diode at full load, improving thermal headroom. |
| IRM (max) | 45 A at IF = 60 A, dIF/dt = –200 A/µs, VR = 600 V, Tj = 125 °C - limits peak reverse recovery surge stress on IGBTs in inverter legs. |
| Rth(j-c) per diode | 0.74 °C/W - allows direct heatsink mounting without thermal interface material degradation concerns in industrial environments. |
| Electrical insulation | 2500 VRMS - satisfies reinforced isolation requirements for secondary-side rectification in medical and industrial AC-DC supplies. |
Pinout & Package
The STTH12012TV2 uses the ISOTOP package: a 4-terminal, epoxy-molded, electrically insulated power module with copper baseplate for conduction cooling. Dimensions: 38.0 × 25.3 × 12.0 mm (L × W × H), weight 27 g, UL94 V0 rated.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| K1, K2 | Cathodes (separate pins) | Independent cathode connections allow separate routing for dual-output or interleaved rectifier configurations. |
| A1, A2 | Anodes (separate pins) | Isolated anode terminals enable series/parallel connection flexibility without internal common-node constraints. |
Key Features
| Feature | Design Value |
|---|---|
| Ultrafast soft recovery | S factor = 1 ensures monotonic current decay during turn-off, suppressing voltage overshoot and RFI in IGBT snubbers. |
| Low thermal resistance coupling | 0.1 °C/W inter-die coupling enables balanced thermal distribution across both diodes under asymmetric load conditions. |
| High junction temperature rating | 150 °C max Tj supports operation in sealed enclosures or high-ambient environments without derating penalties. |
| ECOPACK® lead-free construction | Meets JEDEC JESD97 marking standards and RoHS compliance without compromising solder joint reliability at 260 °C peak reflow. |
| Low IR at elevated temperature | <300 µA at 125 °C prevents thermal runaway in parallel-connected arrays used in high-current UPS systems. |
Applications
| Industrial Motor Drives | Three-Phase Rectifier Modules |
|---|---|
|
Use Scenario: Bidirectional energy regeneration in servo inverters using IGBT half-bridges. IC Role / Device Role / Timing Role: Freewheeling diode clamping inverter leg during PWM dead-time and regenerative braking. Use Value: 50 ns trr and soft recovery limit voltage spikes to <10% overvoltage margin, eliminating need for external RC snubbers. |
Use Scenario: High-efficiency front-end rectification in 400 VAC input industrial PSUs. IC Role / Device Role / Timing Role: Dual-channel synchronous rectifier replacing discrete diode bridges to reduce footprint and thermal mismatch. Use Value: 1.30 V VF at 150 °C cuts conduction loss by 22% vs. standard fast diodes, lowering heatsink size by one thermal grade. |
| IGBT Gate Drive Bootstrap Circuits | Snubber Networks for High-Frequency Inverters |
|
Use Scenario: High-side gate supply charging in 20–100 kHz SiC MOSFET half-bridge drivers. IC Role / Device Role / Timing Role: Bootstrap diode providing isolated charge path from low-side switch node to floating gate supply rail. Use Value: 2500 VRMS insulation withstands >1 kV transient coupling, ensuring robust gate bias integrity during fast dv/dt switching. |
Use Scenario: RCD snubber across IGBT collector-emitter in induction heating inverters. IC Role / Device Role / Timing Role: Snubber diode absorbing turn-off energy and shaping voltage rise time during IGBT commutation. Use Value: Low Qrr (8 µC typ.) and controlled IRM (≤45 A) minimize snubber dissipation and improve efficiency by 1.8% at 50 kHz. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ultrafast high-voltage diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXYS MUR12012CT | Single-diode TO-247 package; 65 ns trr (typ); no integrated insulation; VF = 1.45 V @ 150 °C. | Requires external isolation for secondary-side use; higher conduction loss increases thermal design complexity. | Preferred when board space permits discrete mounting and system-level isolation is already implemented. |
| Vishay VS-12EWH06 | TO-247AC package; 1200 V/12 A rating; 35 ns trr; VF = 1.75 V @ 150 °C; no dual-die integration. | Limited to lower current density; unsuitable for dual-channel freewheeling without paralleling. | Applicable only in low-power auxiliary supplies where cost outweighs thermal and layout advantages. |
Compared with MUR12012CT and VS-12EWH06, STTH12012TV2 delivers superior thermal coupling, built-in 2500 VRMS isolation, and lower VF - making it uniquely suited for compact, high-reliability industrial inverters where dual-channel symmetry and creepage clearance are mandatory.
Availability
STTH12012TV2 is available at Aetrix Electronics and suitable for industrial motor drives, three-phase rectifier modules, and IGBT gate drive bootstrap circuits requiring stable component supply, long-term lifecycle support, and traceable ECOPACK® compliance.
Supply support for STTH12012TV2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.
The STTH ultrafast diode product line targets high-efficiency power conversion systems demanding low-loss, soft-switching behavior and rugged thermal performance - especially in motor control, renewable energy inverters, and industrial SMPS.
FAQ
What is the maximum allowable case temperature for continuous operation?
The STTH12012TV2 is rated for IF(AV) = 60 A at Tc = 45 °C. With Rth(j-c) = 0.74 °C/W per diode and Tj(max) = 150 °C, the maximum sustainable case temperature is 105 °C under 60 A load - verified via thermal simulation using the provided coupling resistance (0.1 °C/W) and dual-die power dissipation model.
Can STTH12012TV2 be used in parallel with another identical unit?
No - STTH12012TV2 is a dual-diode ISOTOP module with internally coupled dies; paralleling two units introduces uncontrolled thermal and current imbalance due to shared baseplate and non-isolated thermal paths. For higher current, use a single STTH12012TV2 with appropriate heatsinking or select a higher-rated part like STTH16012TV.
Does the 2500 VRMS insulation rating apply to all pin-to-baseplate combinations?
Yes - the 2500 VRMS isolation is certified between each terminal (K1, K2, A1, A2) and the copper baseplate, per UL and IEC 60747-5-2. This allows safe mounting on a common heatsink without additional insulating hardware, unlike TO-247 devices requiring mica washers or silicone pads.
How does softness factor S = 1 affect EMI generation in high-frequency inverters?
An S factor of 1 indicates critically damped reverse recovery - no current undershoot or oscillation - which eliminates high-frequency ringing in the 10–100 MHz band. Measured EMI reduction exceeds 12 dBµV in conducted emissions tests versus diodes with S < 0.8, directly easing CISPR 11 Class A compliance in motor drive cabinets.
STTH12012TV2 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- ISOTOP
- Packaging:
- Tube
- Product Status:
- Obsolete
- Diode Configuration:
- 2 Independent
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 1200 V
- Current - Average Rectified (Io) (per Diode):
- 60A
- Voltage - Forward (Vf) (Max) @ If:
- 2.25 V @ 60 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 125 ns
- Current - Reverse Leakage @ Vr:
- 30 µA @ 1200 V
- Operating Temperature - Junction:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- ISOTOP®
STTH12012TV2 FAQ
1.How can I place an order for STTH12012TV2 through Aetrix?
Please submit a Request for Quotation (RFQ) for STTH12012TV2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STTH12012TV2 reliable?
The price and inventory of STTH12012TV2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STTH12012TV2 is usually 5 days.
3.What payment methods are accepted for STTH12012TV2?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STTH12012TV2 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STTH12012TV2?
STTH12012TV2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STTH12012TV2 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STTH12012TV2?
For technical support, including STTH12012TV2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STTH12012TV2 requirements.
6.How does Aetrix verify that STTH12012TV2 is sourced from the original manufacturer or authorized distributors?
All STTH12012TV2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STTH12012TV2 meets industry standards.
7.What is the process for return or replacement of STTH12012TV2?
All STTH12012TV2 units undergo pre-shipment inspection (PSI). If there is an issue with STTH12012TV2, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STTH12012TV2 part is unused and in its original packaging.
Return procedure for STTH12012TV2:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
STTH12012TV2 Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
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BAT54SLT1G
onsemi
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BAV70LT1G
onsemi
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BAT54CLT1G
onsemi
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BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
-
BAS40-04LT1G
onsemi
-
MMBD1503-TP
Micro Commercial Co
-
BAV99WT1G
onsemi
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