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STMicroelectronics STTH1210G

Part No.:
STTH1210G
Manufacturer:
STMicroelectronics
Category:
Single Diodes
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixSTTH1210G.pdf
Description:
DIODE GEN PURP 1KV 12A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,800

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Product details

Overview

STTH1210G from STMicroelectronics is a 1000 V, 12 A ultrafast recovery silicon diode in D2PAK (TO-263) package, optimized for high-voltage rectification and freewheeling in industrial power supplies and motor drives. It delivers typ. 48 ns reverse recovery time, 1.30 V forward voltage at 150 °C, and 175 °C maximum junction temperature.

For engineers reviewing the STTH1210G datasheet, STTH1210G pinout, STTH1210G application, or STTH1210G equivalent, key selection criteria include soft recovery behavior (S factor = 2), low conduction loss (P ≈ 1.3×IF(AV) + 0.033×IF² RMS), 2500 VRMS insulation rating (in insulated variants), and thermal resistance of 1.9 °C/W (junction-to-case).

Technical Context

This diode employs a platinum-doped epitaxial structure to achieve ultrafast, soft reverse recovery-critical for minimizing EMI and voltage overshoot in hard-switched SMPS and IGBT snubbers. Its 1000 V VRRM and 175 °C Tj rating support operation in high-reliability industrial environments where thermal margin and voltage derating are essential.

Dynamic performance is characterized under standardized conditions: trr measured at IF = 1 A, dIF/dt = −100 A/µs, VR = 30 V, Tj = 25 °C (typ. 48 ns); IRM and Qrr scale predictably with dIF/dt and junction temperature, enabling accurate loss modeling in PFC and output rectifier stages.

Key Specifications

ParameterValue and Actual Design Meaning
VRRM1000 V - supports 800 V DC bus designs with ≥20% voltage margin against transients
IF(AV)12 A at Tc = 125 °C - enables compact heatsinking in continuous conduction mode rectifiers
trr (typ)48 ns - reduces switching losses and EMI in 100–500 kHz power converters
VF (typ)1.30 V at IF = 12 A, Tj = 150 °C - lowers conduction loss vs. standard fast diodes in high-temp operation
Rth(j-c)1.9 °C/W - allows direct mounting to PCB copper or heatsink for thermal management without forced air
S factor2 - indicates soft recovery with minimal current tail, reducing voltage ringing across switching devices
IRM (max)20 A at IF = 12 A, dIF/dt = −200 A/µs, VR = 600 V, Tj = 125 °C - defines peak reverse current stress on gate drivers

Pinout & Package

D2PAK (TO-263) surface-mount package with isolated tab; thermally efficient design featuring 1.9 °C/W junction-to-case thermal resistance and 1.48 g mass. Tab is electrically connected to cathode.

Pin/TerminalCircuit RoleDesign Meaning
Anode (Lead 2)Forward current entryConnected to AC input or switch node; requires low-inductance layout to minimize voltage spikes during recovery
Cathode (Tab + Lead 3)Forward current exit / heat pathTab serves as primary thermal interface and electrical cathode; must be soldered to ≥10 cm² copper pour for rated current
NC (Lead 1)No connectionInternal die isolation; left floating-no routing or grounding required

Key Features

FeatureDesign Value
Ultrafast soft recoverytrr = 48 ns (typ), S factor = 2 - suppresses voltage overshoot and reduces snubber losses in IGBT/MOSFET circuits
High junction temperature ratingTj(max) = 175 °C - enables operation in sealed enclosures or high-ambient environments without derating
Low leakage currentIR ≤ 30 µA at Tj = 125 °C, VR = VRRM - improves thermal stability and reduces standby power in auxiliary supplies
Optimized conduction lossVF = 1.30 V (typ) at 12 A / 150 °C - lowers average power dissipation vs. legacy 1.5+ V diodes in high-duty-cycle applications
D2PAK surface-mount compatibilityStandardized footprint per Table 8 (JEDEC TO-263) - supports automated assembly and high-density board layouts

Applications

Industrial Power Supply RectificationIGBT Freewheeling Diode

Use Scenario: Output rectification in 3 kW telecom or server PSUs operating at 100–300 kHz with 400–800 V DC bus.

IC Role / Device Role / Timing Role: Main output diode conducting during flyback phase; handles 12 A average current with repetitive 100 A surge peaks.

Use Value: 48 ns trr minimizes reverse recovery charge (Qrr), reducing switching losses by ~35% versus standard fast diodes at 200 kHz.

Use Scenario: Anti-parallel freewheeling path for 1200 V IGBTs in variable-frequency motor drives (0–400 Hz).

IC Role / Device Role / Timing Role: Provides low-loss current recirculation during IGBT turn-off; withstands 600 V reverse bias with soft recovery.

Use Value: Soft recovery (S = 2) limits di/dt-induced voltage spikes across IGBT collector-emitter, improving system reliability.

Snubber Network DiodeBootstrap Circuit Diode

Use Scenario: Clamp diode in RCD snubber across MOSFET/IGBT in LLC resonant converters.

IC Role / Device Role / Timing Role: Conducts brief high-di/dt current pulses during switch turn-off; blocks 800–1000 V transient voltage.

Use Value: Low IR (≤30 µA @ 125 °C) prevents thermal runaway in high-temperature snubber locations near power switches.

Use Scenario: High-side gate driver bootstrap diode in half-bridge inverters for HVAC compressors and EV traction inverters.

IC Role / Device Role / Timing Role: Charges bootstrap capacitor during low-side conduction; blocks 600+ V when high-side switch is active.

Use Value: 1000 V VRRM ensures margin against Miller-induced voltage spikes; 1.30 V VF maintains efficient capacitor recharge at 150 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast high-voltage diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IXYS MUR1210CTTO-220AB dual common-cathode configuration; trr = 60 ns (typ); VF = 1.35 V @ 12 A, 125 °CRequires dual-diode layout; higher trr increases switching loss in >250 kHz designsSelect for cost-sensitive through-hole assembly where dual-diode topology matches existing board design
Vishay VS-12EWH10D2PAK package; trr = 55 ns (typ); VF = 1.45 V @ 12 A, 125 °C; no soft recovery data publishedLacks documented softness factor; higher VF increases conduction loss in thermally constrained designsSelect when strict trr < 50 ns is not required and supply chain favors Vishay's long-term availability

Compared with MUR1210CT and VS-12EWH10, STTH1210G offers superior soft recovery (S = 2) and lower VF at elevated temperature-critical for EMI-sensitive, high-efficiency industrial converters where thermal margin and voltage overshoot control are prioritized over lowest unit cost.

Availability

STTH1210G is available at Aetrix Electronics and suitable for industrial power supplies, motor control inverters, and high-reliability snubber networks requiring stable component supply, full traceability, and long-lifecycle support.

Supply support for STTH1210G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, microcontrollers, and automotive ICs with vertical manufacturing capability.

The STTH series targets high-voltage, high-reliability rectification-designed specifically for industrial SMPS, UPS, welding equipment, and motor drives demanding ruggedness, soft recovery, and extended thermal operation.

FAQ

What is the maximum allowable case temperature for continuous operation?

The STTH1210G supports IF(AV) = 12 A at Tc = 125 °C in D2PAK package. Exceeding this requires derating per Figure 1; sustained case temperatures above 135 °C reduce lifetime due to accelerated metallization fatigue and bond wire degradation.

Does the D2PAK package provide electrical isolation between tab and leads?

No-the D2PAK variant (STTH1210G) has an electrically connected cathode tab. For isolation, ST offers TO-220Ins (2500 VRMS) and TO-220FPAC versions; D2PAK requires PCB-level isolation if cathode potential differs from heatsink ground.

How does soft recovery impact EMI in high-frequency converters?

Soft recovery (S factor = 2) limits the rate of current decay during turn-off, reducing di/dt-induced voltage spikes across stray inductance. This directly lowers broadband conducted EMI-especially in 30–100 MHz range-without requiring larger snubbers or ferrite beads.

Can STTH1210G replace older STTH1208 in existing designs?

Yes-STTH1210G shares identical D2PAK footprint and pinout with STTH1208 but offers higher VRRM (1000 V vs. 800 V) and improved trr (48 ns vs. 60 ns). No layout changes needed; verify system voltage margin and thermal performance under worst-case load conditions.

STTH1210G Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
-
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tube
Product Status:
Obsolete
Technology:
Standard
Voltage - DC Reverse (Vr) (Max):
1000 V
Current - Average Rectified (Io):
12A
Voltage - Forward (Vf) (Max) @ If:
2 V @ 12 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
90 ns
Current - Reverse Leakage @ Vr:
10 µA @ 1000 V
Capacitance @ Vr, F:
-
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK
Operating Temperature - Junction:
175°C (Max)

STTH1210G FAQ

1.How can I place an order for STTH1210G through Aetrix?

Please submit a Request for Quotation (RFQ) for STTH1210G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STTH1210G reliable?

The price and inventory of STTH1210G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STTH1210G is usually 5 days.

3.What payment methods are accepted for STTH1210G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STTH1210G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STTH1210G?

STTH1210G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STTH1210G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STTH1210G?

For technical support, including STTH1210G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STTH1210G requirements.

6.How does Aetrix verify that STTH1210G is sourced from the original manufacturer or authorized distributors?

All STTH1210G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STTH1210G meets industry standards.

7.What is the process for return or replacement of STTH1210G?

All STTH1210G units undergo pre-shipment inspection (PSI). If there is an issue with STTH1210G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STTH1210G part is unused and in its original packaging.

Return procedure for STTH1210G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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