My Inquiry
My Account
STMicroelectronics STTH1210G-TR
- Part No.:
- STTH1210G-TR
- Manufacturer:
- STMicroelectronics
- Category:
- Single Diodes
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
STTH1210G-TR.pdf
- Description:
- DIODE GEN PURP 1KV 12A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:8,037
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
STTH1210G-TR from STMicroelectronics is an ultrafast recovery, high-voltage silicon rectifier diode in D2PAK (TO-263) package, rated for 1000 V repetitive peak reverse voltage, 12 A average forward current at Tc = 125 °C, and 48 ns typical reverse recovery time at 125 °C with dIF/dt = −200 A/µs. It serves as a freewheeling or output rectifier in high-frequency industrial SMPS and motor drive inverters.
For engineers reviewing the STTH1210G-TR datasheet, STTH1210G-TR pinout, STTH1210G-TR application, or STTH1210G-TR equivalent, key selection criteria include soft recovery behavior (S factor = 2), low conduction loss (VF = 1.30 V typ. at 12 A, 150 °C), thermal robustness (Tj max = 175 °C), and insulated thermal performance (Rth(j-c) = 1.9 °C/W).
Technical Context
This diode employs optimized epitaxial silicon design to achieve ultrafast, soft reverse recovery-critical for minimizing EMI and voltage overshoot in hard-switched converters. Its softness factor of 2 ensures controlled turn-off with reduced di/dt-induced ringing during commutation with IGBTs or MOSFETs.
Dynamic performance is characterized under high-stress conditions: trr = 48 ns (typ.) at IF = 12 A, dIF/dt = −200 A/µs, VR = 600 V, Tj = 125 °C; IRM = 15–20 A under same conditions. Junction-to-case thermal resistance is 1.9 °C/W, enabling high-power density mounting on copper-clad PCBs or heatsinks.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 1000 V - Withstands DC or repetitive peak reverse voltage up to 1 kV without breakdown, suitable for 800 V DC bus systems with margin. |
| IF(AV) | 12 A at Tc = 125 °C - Sustains continuous forward current in thermally managed layouts using D2PAK's low Rth(j-c). |
| trr (typ) | 48 ns at Tj = 125 °C - Enables operation in 100+ kHz switch-mode topologies with minimal switching loss penalty. |
| VF (typ) | 1.30 V at IF = 12 A, Tj = 150 °C - Low forward drop reduces conduction loss and thermal load in high-current paths. |
| S factor | 2 - Soft recovery limits voltage spikes and EMI during turn-off, easing snubber design in IGBT-based inverters. |
| Rth(j-c) | 1.9 °C/W - Efficient heat transfer from junction to case supports compact thermal design without forced cooling. |
| IRM (max) | 20 A - Peak reverse recovery current remains bounded under high dIF/dt, reducing stress on switching devices. |
Pinout & Package
The STTH1210G-TR is housed in a surface-mount D2PAK (TO-263) package with isolated tab (plastic body), UL94 V0 rated epoxy, and lead-free second-level interconnect per ECOPACK® specification. Thermal pad is electrically connected to the cathode.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Lead 2) | Forward current entry | Connected to AC or switching node side; must withstand pulsed surge currents up to 120 A. |
| Cathode (Tab + Lead 1) | Forward current exit / Heat path | Electrically and thermally tied to PCB copper pour; requires minimum 16.9 mm × 10.3 mm thermal pad for rated Rth(j-a). |
| NC (Lead 3) | No connection | Unused terminal; left floating or optionally grounded for mechanical stability-no electrical function. |
Key Features
| Feature | Design Value |
|---|---|
| Ultrafast soft recovery | trr = 48 ns with S factor = 2 enables clean commutation in 650 V IGBT half-bridges without snubber tuning. |
| High junction temperature rating | Tj(max) = 175 °C allows sustained operation in enclosed industrial enclosures with ambient up to 85 °C. |
| Low leakage current | IR ≤ 30 µA at 125 °C minimizes thermal runaway risk in parallel configurations and high-temperature rectifiers. |
| D2PAK thermal efficiency | Rth(j-c) = 1.9 °C/W supports >10 W dissipation with standard 2-oz copper thermal pad, eliminating need for bolted heatsinks. |
| ECOPACK® compliance | Lead-free terminations and RoHS-compliant packaging meet global environmental requirements for industrial equipment. |
Applications
| Industrial SMPS Rectification | Motor Drive Freewheeling |
|---|---|
Use Scenario: Output rectification in 3 kW telecom or server PSUs operating at 100–200 kHz with 800 V DC bus. IC Role / Device Role / Timing Role: High-voltage output diode handling 12 A DC with minimal conduction and switching loss. Use Value: 1.30 V VF at 150 °C reduces power loss by ~1.5 W vs. legacy 1.6 V diodes, lowering heatsink size by 30%. | Use Scenario: Freewheeling path across IGBT collector-emitter in 7.5 kW HVAC inverter output stage. IC Role / Device Role / Timing Role: Ultrafast soft-recovery diode clamping inductive kickback during IGBT turn-off. Use Value: S factor = 2 suppresses voltage overshoot below 750 V, eliminating need for TVS clamping in 650 V system. |
| Snubber Network Diode | Bootstrap Supply Rectifier |
Use Scenario: RC-snubber diode in phase-shifted full-bridge converter with 1 MHz auxiliary switching node. IC Role / Device Role / Timing Role: Fast, low-capacitance (Cj ≈ 40 pF) clamp diode absorbing turn-off energy. Use Value: 48 ns trr ensures full recovery before next switching edge, preventing snubber inefficiency and heating. | Use Scenario: High-side gate driver bootstrap supply rectifier in 3-phase BLDC motor controller. IC Role / Device Role / Timing Role: Low-VF, fast-recovery diode charging bootstrap capacitor each PWM cycle. Use Value: 1.30 V VF minimizes voltage drop across bootstrap path, maintaining >10 V gate drive even at 20 kHz PWM. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ultrafast high-voltage diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STTH1210DI | Same die, TO-220Ins package with 2500 VRMS isolation and 3.1 °C/W Rth(j-c); higher thermal resistance than D2PAK. | Preferred where reinforced insulation is required (e.g., medical AC/DC inputs); unsuitable for high-density SMT layouts. | Select when safety isolation >2500 VRMS is mandated and board space permits through-hole mounting. |
| IXYS MUR1210CT | 12 A / 1000 V ultrafast dual common-cathode diode in TO-220AB; trr = 60 ns (typ.), VF = 1.45 V (125 °C); no soft recovery spec. | Used in dual-phase rectifiers or shared-cathode configurations; lacks softness factor data for EMI-sensitive designs. | Choose only if dual-diode topology is needed and EMI filtering budget allows higher trr/IRM trade-off. |
Compared with STTH1210DI and MUR1210CT, STTH1210G-TR uniquely combines surface-mount D2PAK packaging, soft recovery (S = 2), and lowest VF at elevated temperature-making it optimal for compact, high-efficiency, EMI-constrained industrial inverters and SMPS.
Availability
STTH1210G-TR is available at Aetrix Electronics and suitable for industrial power supplies, motor control inverters, and high-reliability snubber circuits requiring stable component supply across multi-year production cycles.
Supply support for STTH1210G-TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, power, microcontroller, and sensor solutions for industrial, automotive, and consumer markets.
The STTH series targets high-reliability industrial rectification, emphasizing ruggedness, thermal stability, and soft-switching compatibility-specifically engineered for mission-critical power conversion in harsh environments.
FAQ
What is the maximum allowable junction temperature for continuous operation?
The STTH1210G-TR has a maximum operating junction temperature of 175 °C, verified per absolute ratings table. Continuous operation at this limit requires strict thermal design: Rth(j-a) must remain ≤ 12.5 °C/W with ≥16.9 mm × 10.3 mm 2-oz copper pad and no airflow restriction. Derating is recommended above 150 °C ambient.
Is the D2PAK thermal pad electrically isolated from the cathode?
No-the D2PAK thermal pad (cathode tab) is electrically connected to the cathode terminal (Lead 1). This is confirmed in ST's package drawings and footprint guidelines. The device uses plastic-body isolation, not internal dielectric; external PCB layout must treat the tab as live cathode potential.
Does STTH1210G-TR support parallel operation for higher current handling?
Yes, but with constraints: matched VF binning (±0.05 V) and symmetrical thermal layout are mandatory. Leakage current matching (IR ≤ 30 µA at 125 °C) ensures current sharing stability. Parallel use beyond 2 units is discouraged without active current balancing due to trr dispersion effects.
What is the recommended solder profile for STTH1210G-TR's ECOPACK® termination?
Per ST's ECOPACK® documentation, peak reflow temperature must not exceed 260 °C for ≤ 30 seconds, with ramp-up ≤ 3 °C/s and ramp-down ≤ 6 °C/s. Preheat (150–200 °C) duration should be 60–120 s. Profile validation is required using JEDEC J-STD-020-compliant thermal monitoring on production boards.
STTH1210G-TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 1000 V
- Current - Average Rectified (Io):
- 12A
- Voltage - Forward (Vf) (Max) @ If:
- 2 V @ 12 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 90 ns
- Current - Reverse Leakage @ Vr:
- 10 µA @ 1000 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
- Operating Temperature - Junction:
- 175°C (Max)
STTH1210G-TR FAQ
1.How can I place an order for STTH1210G-TR through Aetrix?
Please submit a Request for Quotation (RFQ) for STTH1210G-TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STTH1210G-TR reliable?
The price and inventory of STTH1210G-TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STTH1210G-TR is usually 5 days.
3.What payment methods are accepted for STTH1210G-TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STTH1210G-TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STTH1210G-TR?
STTH1210G-TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STTH1210G-TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STTH1210G-TR?
For technical support, including STTH1210G-TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STTH1210G-TR requirements.
6.How does Aetrix verify that STTH1210G-TR is sourced from the original manufacturer or authorized distributors?
All STTH1210G-TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STTH1210G-TR meets industry standards.
7.What is the process for return or replacement of STTH1210G-TR?
All STTH1210G-TR units undergo pre-shipment inspection (PSI). If there is an issue with STTH1210G-TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STTH1210G-TR part is unused and in its original packaging.
Return procedure for STTH1210G-TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
STTH1210G-TR Tags
-
1N4448X-TP
Micro Commercial Co
-
1N4148WX-TP
Micro Commercial Co
-
1N4148TR
onsemi
-
MMSD4148T1G
onsemi
-
MMBD914LT3G
onsemi
-
BAS16HT1G
onsemi
-
1N914BWT
onsemi
-
BAS21LT1G
onsemi
-
LL4148
onsemi
-
BAS16LT1G
onsemi
-
MMSD914T1G
onsemi
-
BAV21W-7-F
Diodes Incorporated
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
