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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

STMicroelectronics STTH1212G

Name: STTH1212G
Brand: STMicroelectronics
SKU: STTH1212G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STTH1212G

Manufacturer:: STMicroelectronics

Category:: Single Diodes

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STTH1212G.pdf

Description:: DIODE GEN PURP 1.2KV 12A D2PAK

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Product details

Overview

STTH1212G from STMicroelectronics is an ultrafast recovery silicon rectifier diode rated for 1200 V repetitive peak reverse voltage, 12 A average forward current, and 175 °C maximum junction temperature. It delivers soft reverse recovery (trr = 50 ns typ. at 125 °C), low conduction loss (VF = 1.25 V typ. at 150 °C, 12 A), and high ruggedness for industrial rectification and freewheeling in motor drives and power supplies.

For engineers reviewing the STTH1212G datasheet, STTH1212G pinout, STTH1212G application, or STTH1212G equivalent, key selection criteria include verified soft recovery behavior (S factor = 2), thermal resistance (Rth(j-c) = 1.6 °C/W), and D2PAK package compatibility with high-current PCB layouts and heatsink mounting.

Technical Context

This diode employs a platinum-doped lifetime-controlled silicon structure to achieve ultrafast, soft reverse recovery-critical for minimizing EMI and voltage overshoot in hard-switched converters. Its low leakage current (IR ≤ 70 µA at 125 °C, VR = 1200 V) enhances thermal stability under sustained high-voltage bias.

The device operates reliably up to 175 °C junction temperature and supports pulsed currents up to 160 A (IFRM), making it suitable for snubber circuits, bootstrap diodes in half-bridge gate drivers, and demagnetization paths in flyback and resonant topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
VRRM	1200 V - Withstands continuous reverse voltage up to 1200 V without breakdown, enabling use in 800 V DC bus systems with safety margin.
IF(AV)	12 A at Tc = 130 °C - Sustains 12 A average forward current with case temperature held at 130 °C, defining thermal design boundary.
trr (typ)	50 ns at IF = 1 A, dIF/dt = −100 A/µs, VR = 30 V, Tj = 25 °C - Enables switching frequencies >100 kHz with low recovery loss and minimal ringing.
VF (typ)	1.25 V at IF = 12 A, Tj = 150 °C - Low forward drop reduces conduction loss and improves efficiency in high-current freewheeling paths.
Rth(j-c)	1.6 °C/W - Junction-to-case thermal resistance enables direct heatsink mounting in TO-220AC-equivalent D2PAK packages for compact thermal management.
S factor	2 at IF = 12 A, dIF/dt = −200 A/µs, VR = 600 V, Tj = 125 °C - Soft recovery minimizes di/dt-induced voltage spikes and EMI generation during turn-off.
IRM (max)	24 A at IF = 12 A, dIF/dt = −200 A/µs, VR = 600 V, Tj = 125 °C - Peak reverse recovery current defines snubber sizing and clamp circuit requirements.

Pinout & Package

STTH1212G is housed in a surface-mount D2PAK (TO-263) package with three terminals: anode, cathode, and exposed metal tab (cathode-connected). The tab serves as both electrical cathode connection and primary thermal path to PCB copper or heatsink.

Pin/Terminal	Circuit Role	Design Meaning
Anode (lead 1)	Forward current entry point	Connected to high-side switch node (e.g., MOSFET drain) in freewheeling or boost configurations.
Cathode (lead 2)	Forward current exit / reverse blocking terminal	Connected to output rail or ground return; carries full load current and must be routed with low-inductance layout.
Tab (exposed metal)	Cathode connection + thermal interface	Electrically tied to cathode; requires solder mask opening and ≥10 cm² copper pour for effective heat dissipation per Rth(j-c) = 1.6 °C/W.

Key Features

Feature	Design Value
Ultrafast soft recovery	trr = 50 ns typ. with S factor = 2 ensures low EMI and reduced voltage overshoot in hard-switched SMPS.
High-temperature operation	Rated for 175 °C junction temperature, supporting compact designs in enclosed industrial enclosures without derating.
Low leakage current	IR ≤ 70 µA at 125 °C, VR = 1200 V - improves reliability in high-voltage standby and hold-up circuits.
D2PAK package	Surface-mount footprint with integrated heatsink tab enables automated assembly and superior thermal performance vs. through-hole TO-220AC.
ECOPACK® compliance	Lead-free second-level interconnect and RoHS-compliant construction meet global environmental regulations.

Applications

Industrial Motor Drives

Switch-Mode Power Supplies

Use Scenario: Freewheeling path in IGBT-based 3-phase inverter stages driving HVAC compressors or pumps.

IC Role / Device Role / Timing Role: Ultrafast recovery diode providing low-loss current recirculation during IGBT turn-off.

Use Value: Soft recovery (S = 2) suppresses voltage spikes across IGBTs, reducing snubber losses and enabling higher switching frequency without overvoltage risk.

Use Scenario: Output rectification in 1–3 kW telecom or server PSUs operating at 100–300 kHz.

IC Role / Device Role / Timing Role: High-voltage secondary-side rectifier handling 12 A average current with minimal conduction loss.

Use Value: VF = 1.25 V at 150 °C lowers conduction loss by ~15% vs. standard fast diodes, improving full-load efficiency and thermal margin.

Snubber Circuits

Bootstrap Diodes

Use Scenario: RC-D snubber across MOSFETs in LLC resonant converters handling 600 V DC link.

IC Role / Device Role / Timing Role: Fast, low-Qrr diode clamping transient energy during MOSFET turn-on.

Use Value: Qrr = 4.5 µC (typ.) at 125 °C limits snubber capacitor stress and enables smaller, lower-loss snubber networks.

Use Scenario: Bootstrap diode in high-side gate driver ICs powering N-channel MOSFETs in half-bridge motor controllers.

IC Role / Device Role / Timing Role: Isolates bootstrap capacitor during high-side switch conduction while sustaining 1200 V blocking.

Use Value: VRRM = 1200 V provides robust margin against shoot-through transients and supply ripple in 400–800 V systems.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast high-voltage diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STTH1212D	Same die, TO-220AC package; Rth(j-c) = 1.6 °C/W identical, but requires through-hole mounting and mechanical screw torque (0.55 Nm).	Better suited for prototyping or low-volume assemblies where manual heatsinking is preferred over SMT thermal pads.	Select when board space allows through-hole layout and mechanical mounting is required for vibration-prone environments.
IXYS MUR1220CT	1200 V, 12 A, trr = 60 ns (typ.), VF = 1.35 V (typ. at 125 °C); dual common-cathode D2PAK, slightly higher VF and slower recovery.	Acceptable in less demanding SMPS where EMI filtering budget permits longer trr; not recommended for snubber or high-dI/dt freewheeling.	Choose only if dual-diode configuration is needed and softness factor (S ≈ 1.5) is acceptable for system-level EMI targets.

Compared with STTH1212D, the STTH1212G offers identical electrical specs but enables automated SMT assembly and improved thermal interface via D2PAK's large copper pad; versus MUR1220CT, it delivers faster, softer recovery critical for high-frequency, low-EMI motor drive inverters.

Availability

STTH1212G is available at Aetrix Electronics and suitable for industrial motor drives, switch-mode power supplies, snubber networks, and bootstrap circuits requiring stable component supply and long-term manufacturability.

Supply support for STTH1212G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, power, microcontroller, and sensor solutions for industrial, automotive, and consumer markets.

STTH1212G belongs to ST's high-voltage ultrafast diode product line, engineered specifically for mission-critical rectification and freewheeling in industrial power conversion systems demanding reliability at 175 °C and beyond.

FAQ

What is the maximum allowable case temperature for continuous operation?

The STTH1212G is rated for IF(AV) = 12 A at Tc = 130 °C, meaning the case temperature must not exceed 130 °C under full-load conditions. At higher ambient temperatures or limited heatsinking, derating is required per the thermal curve in Figure 3 of the datasheet, with absolute max junction temperature capped at 175 °C.

Can STTH1212G replace STTH1212D in existing designs?

Yes, electrically identical-same die, same ratings-but STTH1212G uses D2PAK (surface-mount) while STTH1212D uses TO-220AC (through-hole). Layout redesign is required for pad geometry, thermal copper, and reflow profile; mechanical mounting and torque specifications do not apply to the D2PAK variant.

Is the D2PAK tab internally connected to the cathode?

Yes-the exposed metal tab on the STTH1212G is electrically connected to the cathode terminal (pin 2). This is confirmed in ST's mechanical drawings and thermal test conditions; PCB layout must treat the tab as a cathode node and provide appropriate clearance and copper connectivity.

Does STTH1212G support lead-free reflow soldering?

Yes-STTH1212G is ECOPACK®-compliant with lead-free second-level interconnect. It supports standard Pb-free reflow profiles (J-STD-020D), including peak temperatures up to 260 °C for 30 seconds, as specified on the inner box label and in ST's packaging documentation.

STTH1212G Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

Technology:: Standard

Voltage - DC Reverse (Vr) (Max):: 1200 V

Current - Average Rectified (Io):: 12A

Voltage - Forward (Vf) (Max) @ If:: 2.2 V @ 12 A

Speed:: Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr):: 100 ns

Current - Reverse Leakage @ Vr:: 10 µA @ 1200 V

Capacitance @ Vr, F:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

Operating Temperature - Junction:: 175°C (Max)

STTH1212G FAQ

1.How can I place an order for STTH1212G through Aetrix?

Please submit a Request for Quotation (RFQ) for STTH1212G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STTH1212G reliable?

The price and inventory of STTH1212G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STTH1212G is usually 5 days.

3.What payment methods are accepted for STTH1212G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STTH1212G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STTH1212G?

STTH1212G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STTH1212G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STTH1212G?

For technical support, including STTH1212G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STTH1212G requirements.

6.How does Aetrix verify that STTH1212G is sourced from the original manufacturer or authorized distributors?

All STTH1212G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STTH1212G meets industry standards.

7.What is the process for return or replacement of STTH1212G?

All STTH1212G units undergo pre-shipment inspection (PSI). If there is an issue with STTH1212G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STTH1212G part is unused and in its original packaging.

Return procedure for STTH1212G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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