STMicroelectronics STTH1602CG-TR

Overview

STTH1602CG-TR from STMicroelectronics is a dual-center-tap ultrafast recovery rectifier diode in D²PAK package, rated for 200 V repetitive peak reverse voltage, 10 A average forward current per diode at TC = 140 °C, and 21 ns typical reverse recovery time. It delivers low conduction loss (VF = 0.78 V typ. at 150 °C, 8 A) and high thermal robustness (Tj max = 175 °C), designed for low-voltage, high-frequency DC–DC converters and SMPS secondary-side rectification.

For engineers reviewing the STTH1602CG-TR datasheet, STTH1602CG-TR pinout, STTH1602CG-TR application, or STTH1602CG-TR equivalent, key selection criteria include dual-diode thermal coupling behavior, insulated package voltage rating (2000 VRMS), TO-220FPAB/TO-220AB/D²PAK footprint compatibility, and conduction loss modeling using P = 0.73 × IF(AV) + 0.020 × IF²(RMS).

Technical Context

This dual-center-tap rectifier integrates two independent ultrafast switching diodes sharing a common cathode terminal, enabling synchronous or interleaved low-loss rectification in half-bridge and full-wave topologies. Its 21 ns trr and 6.8–8.8 A IRM at 125 °C support high dIF/dt operation (>200 A/µs) without excessive switching loss or EMI.

The D²PAK package provides 1.9 °C/W junction-to-case thermal resistance per device and supports surface-mount assembly with 1000-unit tape-and-reel delivery. Insulation rating of 2000 VRMS enables use in isolated power stages without additional barrier materials.

Key Specifications

Pinout & Package

STTH1602CG-TR uses the D²PAK (TO-263) surface-mount package with three terminals: two anodes (A1, A2) and one shared cathode (K). The package features an isolated metal tab rated for 2000 VRMS insulation and is optimized for thermal transfer via large copper pour under the tab.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-center-tap ultrafast rectifier applications.

Compared with STTH1602CT and STTH1602CFP, STTH1602CG-TR offers the highest power density (1.9 °C/W + SMT) and lowest assembly cost, but requires reflow-compatible PCB design and thermal pad layout verification per Figure 13.

Availability

STTH1602CG-TR is available at Aetrix Electronics and suitable for server VRMs, industrial PLC power supplies, telecom DC–DC bricks, and automotive ADAS camera power systems requiring stable component supply, long-lifecycle availability, and traceable sourcing.

Supply support for STTH1602CG-TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STTH1602CG-TR belongs to ST's high-efficiency ultrafast diode product line, engineered specifically for high-frequency switch-mode power conversion where low trr, low VF, and thermal reliability are critical in compact form factors.

FAQ

What is the maximum continuous forward current per diode at 100 °C case temperature?

At TC = 100 °C, the STTH1602CG-TR supports 8 A average forward current per diode (Table 2). This rating assumes δ = 0.5 square wave conduction and accounts for thermal derating due to reduced heat dissipation at lower case temperatures. The device must be mounted on ≥10 cm² of 35 µm copper to sustain this current without exceeding 175 °C junction temperature.

Does the D²PAK package provide galvanic isolation between the tab and internal die?

Yes - the D²PAK variant used in STTH1602CG-TR incorporates an insulated metal tab rated for 2000 VRMS sinusoidal isolation (per datasheet Section 1, "Features"). This eliminates the need for external insulating pads when mounting directly to a heatsink, provided creepage and clearance distances meet system-level safety requirements.

How does reverse recovery charge (Qrr) vary with dIF/dt and temperature?

Qrr increases with both dIF/dt and junction temperature: at 125 °C and 1000 A/µs, Qrr reaches ~260 nC (Figure 7); at 25 °C and same dIF/dt, it drops to ~180 nC. Designers must account for this variation when calculating total switching loss and selecting snubber components for high-dI/dt applications like LLC resonant converters.

Can STTH1602CG-TR replace STTH1602CT in an existing TO-220AB design without layout changes?

No - STTH1602CG-TR uses D²PAK (TO-263) footprint, which is incompatible with TO-220AB land patterns. The D²PAK has different pin spacing (e.g., e1 = 4.88–5.28 mm vs. TO-220AB e1 = 4.95–5.15 mm), tab geometry, and thermal pad requirements. A PCB redesign per Figure 13 is required to leverage its superior thermal performance and SMT manufacturability.