STMicroelectronics STTH2002CFP

Overview

STTH2002CFP from STMicroelectronics is a dual-center-tap ultrafast recovery silicon rectifier diode in insulated TO-220FPAB package, rated for 200 V repetitive peak reverse voltage, 2 × 10 A average forward current per diode, and 22 ns typical reverse recovery time. It delivers low conduction losses (VF = 0.78 V at 10 A, 150 °C) and high thermal robustness (Tj(max) = 175 °C), targeting high-frequency switch-mode power supplies and DC/DC converters.

For engineers reviewing the STTH2002CFP datasheet, STTH2002CFP pinout, STTH2002CFP application, or STTH2002CFP equivalent, key selection criteria include reverse recovery performance under dIF/dt stress, junction-to-case thermal resistance (3.8 °C/W per device), insulation rating (2000 VRMS), and dual-diode center-tap configuration for bridge or freewheeling topologies.

Technical Context

This dual-diode rectifier integrates two independent ultrafast switching elements sharing a common cathode connection in a single insulated TO-220FPAB housing. Its design targets high-frequency operation with minimal stored charge (Qrr typ. ~20 nC) and low forward voltage drop across temperature (0.78–1.05 V at 10–20 A, 150 °C).

The TO-220FPAB package provides reinforced electrical isolation (2000 VRMS) between the metal tab and internal die, enabling direct heatsink mounting without additional insulators. Thermal coupling between diodes is characterized by Rth(c) = 2.5 °C/W, allowing accurate junction temperature estimation when both diodes conduct simultaneously.

Key Specifications

Pinout & Package

The STTH2002CFP uses an insulated TO-220FPAB package with three terminals: two anodes (A1, A2) and one common cathode (K). The metal tab is electrically isolated (2000 VRMS) and serves as a thermal path only.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-center-tap ultrafast rectifier applications.

Compared with STTH2002CT and MUR1620CT, STTH2002CFP uniquely combines reinforced isolation, 175 °C rating, and 22 ns trr-enabling compact, high-efficiency, safety-certifiable designs without external insulation or derating.

Availability

STTH2002CFP is available at Aetrix Electronics and suitable for server AC-DC power supplies, industrial DC/DC converters, and solar microinverters requiring stable component supply, long-lifecycle support, and certified isolation performance.

Supply support for STTH2002CFP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, power, MCU, and sensor solutions for industrial, automotive, and consumer markets.

The STTH ultrafast diode product line targets high-efficiency power conversion, emphasizing low Qrr, tight VF distribution, and rugged packaging for mission-critical SMPS and renewable energy systems.

FAQ

What is the maximum continuous forward current per diode at 100 °C case temperature?

At TC = 100 °C, the STTH2002CFP supports 10 A per diode continuously-consistent with its rated IF(AV) = 10 A at TC = 120 °C. Derating follows linear interpolation: at 100 °C, the limit remains 10 A, as the datasheet specifies 10 A at 120 °C and 15 A at 130 °C per diode. No further derating is required below 120 °C.

Can STTH2002CFP replace STTH2002CT in an existing design without layout changes?

No-STTH2002CFP uses TO-220FPAB with insulated tab and different mechanical dimensions (e.g., L3 = 28.6–30.6 mm vs. TO-220AB's 28.9 mm typ.), requiring footprint revision. Mounting hole alignment, tab clearance, and thermal pad geometry differ. Insulation eliminates need for mica, but mechanical fit must be verified per Table 9.

Is the 2000 VRMS insulation rating tested per diode or across the entire package?

The 2000 VRMS insulation rating applies between the metal tab (heatsink interface) and all internal terminals (A1, A2, K)-verified per UL/IEC standards for reinforced insulation. It is not per-diode; it guarantees safe operation when the tab is grounded and either anode is at 200 V potential relative to ground.

How does the dual-diode thermal coupling affect junction temperature calculation?

When both diodes conduct simultaneously, ΔTj(diode1) = P(diode1) × Rth(j-c) + P(diode2) × Rth(c), where Rth(c) = 2.5 °C/W. This accounts for heat conducted from diode 2 into diode 1's thermal path. Ignoring coupling overestimates margin by up to 12 °C at 10 A per diode.