STMicroelectronics STTH2003CG-TR

Overview

STTH2003CG-TR from STMicroelectronics is a dual-center-tap ultrafast recovery epitaxial rectifier diode in D²PAK package, rated for 300 V repetitive peak reverse voltage and 2 × 10 A average forward current per diode at TC = 140 °C, with 25 ns max reverse recovery time and 0.85 V typical forward voltage at 125 °C - designed for secondary rectification in high-frequency telecom DC/DC converters.

For engineers reviewing the STTH2003CG-TR datasheet, STTH2003CG-TR pinout, STTH2003CG-TR application, or STTH2003CG-TR equivalent, this device requires attention to thermal resistance (Rth(j-c) = 2.5 °C/W per diode), softness factor (0.3–1.1), insulated mounting requirements for TO-220FPAB variants, and conduction loss modeling using P = 0.75 × IF(AV) + 0.025 × IF²(RMS).

Technical Context

This dual-diode rectifier integrates two independent fast-recovery epitaxial junctions in a single D²PAK thermally optimized package, enabling synchronous secondary-side rectification without external coupling. Its 300 V VRRM rating supports 48 V telecom bus architectures with margin, while the 25 ns trr (max) ensures minimal switching loss at >100 kHz operation.

The device exhibits soft reverse recovery (S factor ≥ 0.3) and low noise EMI signature due to controlled carrier lifetime control, critical for meeting CISPR-22 Class B emissions in enclosed power supplies. Junction-to-case thermal resistance of 2.5 °C/W per diode enables 20 A total device current handling with ≤ 45 °C case rise under forced-air cooling.

Key Specifications

Pinout & Package

D²PAK (TO-263) package: surface-mount, isolated tab, UL94 V0 epoxy, 1.38 g mass, 16.9 mm × 12.2 mm footprint with 2.54 mm lead pitch. Tab is electrically connected to cathode terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast dual-diode rectifier applications.

Compared with STTH2003CT and STTH2003CFP, the STTH2003CG-TR offers optimal balance of SMT manufacturability, thermal performance, and board-area efficiency - its D²PAK footprint delivers 2.5× better power density than TO-220AB and avoids the 82% thermal penalty of TO-220FPAB while maintaining full 300 V rating.

Availability

STTH2003CG-TR is available at Aetrix Electronics and suitable for telecom DC/DC converters, server VRMs, and industrial PLC power supplies requiring stable component supply, long-lifecycle support, and RoHS-compliant packaging.

Supply support for STTH2003CG-TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

The STTH2003 series belongs to ST's high-voltage ultrafast rectifier product line, engineered specifically for high-efficiency, high-frequency secondary-side rectification in telecom and server power systems where soft recovery and thermal density are critical.

FAQ

What is the maximum junction temperature and how does it affect reliability?

The STTH2003CG-TR has a maximum junction temperature of 175 °C, validated per JEDEC JESD22-A108. Operating continuously at 150 °C junction temperature extends FIT rate to < 120 failures per billion hours, enabling 10+ year field life in telecom infrastructure. Derating curves in Figure 12 show 10 A IF(AV) capability at 85 °C ambient with 25 cm² copper pad.

Can STTH2003CG-TR replace Schottky diodes in 48 V telecom supplies?

Yes - though Schottkys offer lower VF, the STTH2003CG-TR's 300 V VRRM enables direct use with 48 V bus without series stacking, and its 25 ns trr minimizes switching loss at 200–500 kHz. At 125 °C, its 0.85 V VF is only 0.15 V higher than 100 V Schottkys, but with 3× higher voltage margin and no thermal runaway risk.

How is thermal performance affected by PCB copper area in D²PAK layout?

Per Figure 11, Rth(j-a) drops from 38 °C/W to 22 °C/W as copper area under the tab increases from 0 to 50 cm² on FR4. For 20 A total current, a minimum 30 cm² 35 µm copper pour reduces junction rise to 55 °C at 25 °C ambient - sufficient for convection-cooled telecom modules without heatsinks.

Is the D²PAK tab electrically isolated, and what mounting considerations apply?

No - the D²PAK tab is internally connected to the cathode terminals (Pins 2), not isolated. It must be soldered directly to a cathode-potential copper plane. If chassis grounding is required, use insulating thermal pads (e.g., Bergquist Sil-Pad 2000) with ≤ 0.5 °C·in²/W interface resistance to maintain thermal performance.