STMicroelectronics STTH2006W

Overview

STTH2006W from STMicroelectronics is an ultrafast high-voltage silicon rectifier diode using Turbo 2 technology, rated for 600 V repetitive peak reverse voltage and 20 A average forward current at Tc = 120 °C, with typical forward voltage of 1.0 V at 150 °C and maximum reverse recovery time of 50 ns - deployed as a continuous-mode PFC boost diode in industrial switching power supplies.

For engineers reviewing the STTH2006W datasheet, STTH2006W pinout, STTH2006W application, or STTH2006W equivalent, key selection criteria include ultrafast trr ≤ 50 ns, low thermal resistance Rth(j-c) = 1.1 °C/W, soft recovery behavior (S factor ≥ 0.2), and DO-247 package compatibility with high-power conduction-cooled layouts.

Technical Context

This device implements a planar junction ultrafast rectifier architecture optimized for high-frequency switching applications. Its Turbo 2 process enables low Qrr (≤ 3 µC at dIF/dt = 100 A/µs) and controlled softness (S factor ≥ 0.2), minimizing EMI and voltage overshoot during turn-off in hard-switched PFC stages.

Thermal performance is defined by a low junction-to-case thermal resistance of 1.1 °C/W, enabling reliable operation up to 175 °C junction temperature. Dynamic parameters are characterized under standardized conditions: trr measured at IF = 0.5 A, Irr = 0.25 A, VR = 30 V; IRM tested at dIF/dt = −100 A/µs, VR = 400 V, Tj = 125 °C.

Key Specifications

Pinout & Package

STTH2006W uses the DO-247 through-hole package - a high-power, insulated-case outline with axial leads designed for direct mounting to heatsinks via M3 screw (recommended torque: 0.55 Nm). Thermal path is optimized for conduction cooling only; no solder reflow profile applies.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast high-voltage rectifier applications.

Compared with MUR2060CT and VS-20EWH06, STTH2006W delivers the lowest combined trr–VF–Rth(j-c) product, making it optimal for thermally constrained, high-frequency PFC stages requiring minimal snubber energy and heatsink mass.

Availability

STTH2006W is available at Aetrix Electronics and suitable for industrial switching power supplies, PFC boost rectifier stages, uninterruptible power systems (UPS), and industrial welding power supplies requiring stable component supply and long-term lifecycle continuity.

Supply support for STTH2006W includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

The STTH series belongs to ST's high-voltage power diode product line, engineered specifically for efficiency-critical rectification in industrial SMPS, PFC circuits, and high-reliability power conversion where ultrafast recovery and thermal robustness are mandatory.

FAQ

What is the maximum allowable junction temperature for STTH2006W?

The absolute maximum operating junction temperature is 175 °C, verified per ST's Absolute Ratings table. This rating enables operation in sealed enclosures with ambient temperatures up to 85 °C when mounted on a heatsink delivering ≤1.1 °C/W thermal resistance from junction to ambient via case interface.

Does STTH2006W support lead-free soldering processes?

Yes - STTH2006W is supplied in an ECOPACK®-compliant DO-247 package with lead-free second-level interconnect, meeting RoHS Directive 2011/65/EU and JEDEC JESD97 marking requirements. The inner box label specifies maximum soldering temperature and duration per JEDEC J-STD-020.

How is reverse recovery time (trr) measured for STTH2006W?

trr is measured under standardized test conditions: Tj = 25 °C, IF = 0.5 A, Irr = 0.25 A, VR = 30 V, with dIF/dt = −50 A/µs. The value reported in datasheet Table 4 (50 ns max) reflects the time from 10% to 25% of reverse current decay, consistent with JEDEC JESD282B methodology.

Can STTH2006W be used in parallel configurations?

Parallel operation is not recommended without individual current-sharing resistors or active balancing, due to inherent VF mismatch between units (±0.15 V typical spread at 20 A). For >40 A applications, ST recommends evaluating the STTH3006W or multi-die alternatives with matched dynamic characteristics.