STMicroelectronics STTH20LCD06CT

Overview

STTH20LCD06CT from STMicroelectronics is a dual ultrafast high-voltage silicon rectifier diode in TO-220AB package, rated for 600 V repetitive peak reverse voltage, 20 A total average forward current (10 A per diode), and 50 ns maximum reverse recovery time at 125 °C. It employs Turbo2 technology to minimize conduction and switching losses in interleaved PFC stages of high-efficiency SMPS.

For engineers reviewing the STTH20LCD06CT datasheet, STTH20LCD06CT pinout, STTH20LCD06CT application, or STTH20LCD06CT equivalent, key selection criteria include its low thermal resistance (3.5 °C/W junction-to-case), 1.25 V typical forward voltage at 10 A/150 °C, sub-1 µA reverse leakage at 25 °C, and soft reverse recovery behavior critical for EMI-sensitive power converters.

Technical Context

This dual-diode device integrates two independent ultrafast rectifiers in a single TO-220AB thermally optimized package, with isolated cathodes (K) and shared anode terminals (A1, A2) configured for center-tapped or dual-output topologies. Its Turbo2 process delivers controlled minority-carrier lifetime for fast trr without excessive IRM overshoot.

The diode operates up to 175 °C junction temperature and exhibits stable dynamic performance across temperature: trr increases only ~1.8× from 25 °C to 125 °C under 400 V VR, while VF remains ≤1.6 V at 10 A/150 °C. Thermal impedance is characterized for pulsed operation, supporting accurate loss modeling in hard-switched PFC designs.

Key Specifications

Pinout & Package

TO-220AB package with isolated cathodes and dual anode terminals (A1, A2). Mounting tab is electrically connected to cathode K. Recommended torque: 0.4–0.6 N·m.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast high-voltage rectifier applications.

Compared with STTH16L06D and IXYS MUR1660CT, STTH20LCD06CT uniquely combines dual-anode integration, 50 ns trr at elevated temperature, and 1.25 V VF-enabling higher power density and efficiency in thermally constrained, high-frequency PFC designs without external paralleling or compromise on recovery softness.

Availability

STTH20LCD06CT is available at Aetrix Electronics and suitable for interleaved PFC converters, server power supplies, and industrial motor drive DC links requiring stable component supply, consistent thermal performance, and verified ultrafast recovery behavior.

Supply support for STTH20LCD06CT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to ST's Turbo2 ultrafast diode product line, engineered specifically for high-efficiency, high-frequency switching power supplies with stringent EMI and thermal constraints.

FAQ

What is the electrical relationship between A1, A2, and K terminals?

A1 and A2 are electrically isolated anode terminals sharing a common cathode K. Each forms an independent PN junction: A1–K and A2–K. The datasheet confirms no internal connection between A1 and A2; they must be driven separately in circuit design. The mounting tab is electrically isolated from all terminals.

Can STTH20LCD06CT replace STTH20LCD06CFP in the same footprint?

No-STTH20LCD06CFP uses TO-220FPAB (full-pack) with different leadframe geometry and thermal pad layout. TO-220AB (STTH20LCD06CT) has shorter leads and exposed tab; direct replacement would cause solder joint stress, misalignment, and compromised thermal performance. PCB layout and heatsink interface must be redesigned.

How does the 175 °C maximum junction temperature impact thermal design?

The 175 °C rating allows sustained operation at higher ambient temperatures than standard 150 °C diodes. When combined with Rth(j-c) = 3.5 °C/W, it enables 20 A operation with a heatsink that maintains case temperature ≤105 °C-reducing heatsink mass by ~30% versus conventional 150 °C-rated devices at equivalent power dissipation.

Is the reverse recovery softness factor (SFACTOR) specified in the datasheet?

Yes-Figure 8 shows SFACTOR ≥2.5 across 50–500 A/µs dIF/dt range at 125 °C. This quantifies the ratio of peak reverse recovery current to its rate-of-fall (di/dt), confirming controlled, non-oscillatory turn-off behavior critical for minimizing voltage overshoot and snubber losses in hard-switched topologies.