STMicroelectronics STTH3002W

Overview

STTH3002W from STMicroelectronics is an ultrafast recovery silicon diode using platinum-doped planar technology, rated for 200 V repetitive peak reverse voltage and 30 A average forward current at Tc = 135 °C in DO-247 package. It delivers 22 ns typical reverse recovery time, 0.77 V typical forward voltage at 25 A/125 °C, and operates up to 175 °C junction temperature - optimized for high-frequency inverters and transistor base-drive circuits.

For engineers reviewing the STTH3002W datasheet, STTH3002W pinout, STTH3002W application, or STTH3002W equivalent, key selection criteria include conduction loss modeling (P = 0.67 × IF(AV) + 0.007 × IF²(RMS)), thermal resistance (1.2 °C/W junction-to-case), and dynamic performance under dIF/dt = −200 A/µs with VR = 30 V.

Technical Context

This diode employs Pt-doping to minimize minority carrier lifetime, enabling ultrafast switching with negligible tail current and low stored charge (QRR ≈ 30–35 nC at IF = 30 A, VR = 160 V, Tj = 125 °C). Its low VF and trr reduce both conduction and switching losses in hard-switched topologies.

The DO-247 package provides robust thermal conduction (Rth(j-c) = 1.2 °C/W) and mechanical stability for high-current PCB mounting. Device behavior is characterized across temperature (Tj = 25–150 °C) and dIF/dt (10–1000 A/µs), with IRM peaking at 9.5 A and tfr at 140 ns under defined transient conditions.

Key Specifications

Pinout & Package

STTH3002W is housed in the DO-247 package: a through-hole, isolated-tab, epoxy-molded power diode housing with UL94 V0 rating, 0.8 Nm recommended mounting torque, and thermal path via the metal tab (cathode-connected).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast diode applications.

Compared with STTH3002W, STTH30L06D trades speed and forward loss for higher voltage capability, while MUR3020CT offers lower cost but sacrifices 36% more conduction loss and 36% slower recovery - making STTH3002W optimal for thermally dense, high-frequency 200 V systems.

Availability

STTH3002W is available at Aetrix Electronics and suitable for high-frequency inverters, transistor base-drive circuits, and polarity protection systems requiring stable component supply, long-lifecycle availability, and traceable sourcing.

Supply support for STTH3002W includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, power, microcontroller, and sensor solutions for industrial, automotive, and consumer markets.

STTH3002W belongs to ST's ultrafast recovery diode product line, engineered specifically for high-efficiency, high-frequency power conversion where low QRR, tight trr distribution, and thermal robustness are critical.

FAQ

What is the maximum allowable case temperature for continuous 30 A operation?

The STTH3002W supports 30 A average forward current only when the case temperature (Tc) is maintained at ≤135 °C, as specified in Table 1. Exceeding this temperature requires linear derating per the IF(AV) vs. Tc curve in Figure 1; at Tc = 150 °C, IF(AV) drops to approximately 22 A.

Is the DO-247 package lead-free and RoHS-compliant?

Yes - STTH3002W is supplied in ECOPACK®-compliant DO-247 packaging with lead-free second-level interconnect, certified to JEDEC JESD97 and marked accordingly on the inner box label and device body per ST's environmental compliance program.

Can STTH3002W replace standard fast recovery diodes like BYV26E in existing designs?

Yes, provided layout accommodates DO-247 footprint and thermal interface. STTH3002W offers 40% faster trr (22 ns vs. 35 ns) and 0.3 V lower VF at 25 A/125 °C, reducing both switching and conduction losses - but requires verification of surge current margin (IFSM = 300 A) and layout creepage for 200 V isolation.

How does reverse leakage (IR) behave at elevated junction temperatures?

At Tj = 150 °C and VR = VRRM (200 V), IR increases to 200 µA maximum (Table 3), which is 10× higher than its 25 °C value (20 µA). This remains well below levels that would impact system efficiency in typical 24–48 V applications but must be considered in high-impedance bias networks above 100 V.