My Inquiry
My Account
STMicroelectronics STTH3012D
- Part No.:
- STTH3012D
- Manufacturer:
- STMicroelectronics
- Category:
- Single Diodes
- Package:
- TO-220-2
- Datasheet:
-
STTH3012D.pdf
- Description:
- DIODE GEN PURP 1.2KV 30A TO220AC
- Quantity:
- Payment:
- Shipping:
Inventory:931
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
STTH3012D from STMicroelectronics is a 1200 V, 30 A ultrafast high-voltage silicon rectifier diode in TO-220AC package, designed for freewheeling and snubber functions in high-frequency switching power stages. It delivers typ. 1.30 V forward voltage at 150 °C, 48 ns reverse recovery time at 200 A/µs, and 175 °C max junction temperature - enabling reliable operation in solar inverters, EV charging stations, and telecom power supplies.
For engineers reviewing the STTH3012D datasheet, STTH3012D pinout, STTH3012D application, or STTH3012D equivalent, key selection criteria include soft recovery behavior (S factor >1.5), low leakage (<20 µA @ 25 °C), thermal resistance (0.44 °C/W typ.), and ruggedness under repetitive surge (210 A IFSM).
Technical Context
This ultrafast diode employs optimized lifetime control and epitaxial structure to achieve soft reverse recovery with minimal oscillation and EMI generation. Its dynamic performance is characterized by low QRR (5700 nC) and controlled IRM (25–35 A), critical for minimizing turn-off losses in hard-switched PFC and DC-DC topologies.
The device supports high pulsed current operation (IFSM = 210 A) and maintains stable conduction across Tj = −65 °C to +175 °C. Thermal design is enabled by validated Rth(j-c) = 0.44 °C/W (TO-220AC), allowing direct heatsink mounting with 0.55 N·m torque specification.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 1200 V - Withstands peak reverse voltage in 1000 V AC-line systems with safety margin. |
| IF(AV) | 30 A @ TC = 130 °C - Sustains continuous forward current with standard heatsinking. |
| VF(typ.) | 1.30 V @ IF = 30 A, Tj = 150 °C - Low conduction loss enables <1.6 W average dissipation at rated current. |
| trr(typ.) | 48 ns @ dIF/dt = −200 A/µs - Enables efficient operation up to 100 kHz switching frequencies. |
| QRR | 5700 nC - Quantifies stored charge removed during turn-off; directly impacts snubber sizing and loss. |
| Tj(max.) | 175 °C - Supports extended operation in high-ambient industrial environments without derating. |
| Rth(j-c) | 0.44 °C/W (typ.) - Defines thermal path efficiency from junction to case; enables precise heatsink selection. |
Pinout & Package
STTH3012D uses the TO-220AC package: single-ended, insulated tab, vertical lead frame, epoxy-molded body meeting UL94 V0. Mounting requires 0.55 N·m recommended torque on M3 screw.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Lead 1) | Forward current entry point | Connected to high-side switching node in boost PFC or inverter leg; carries full load current. |
| Cathode (Lead 2) | Forward current exit point | Connected to ground or low-side rail; must handle high di/dt during recovery. |
| Case / Tab | Thermal and electrical connection to cathode | Electrically tied to cathode; provides primary heat conduction path to heatsink. |
Key Features
| Feature | Design Value |
|---|---|
| Ultrafast soft recovery | S factor >1.5 at 125 °C ensures low EMI and reduced voltage overshoot during turn-off. |
| Low leakage current | <20 µA @ 25 °C and <150 µA @ 125 °C improves thermal stability and reduces runaway risk. |
| High junction temperature rating | 175 °C max Tj allows operation in sealed enclosures or high-ambient industrial settings. |
| ECOPACK2 compliance | Meets RoHS and halogen-free requirements without compromising thermal or electrical performance. |
| Rugged surge capability | 210 A non-repetitive surge withstand enables robustness against line transients and motor back-EMF. |
Applications
| Solar Inverter DC-Link | EV Charging Station PFC Stage |
|---|---|
|
Use Scenario: Freewheeling path in three-phase Vienna rectifier operating at 50–100 kHz. IC Role / Device Role / Timing Role: Ultrafast recovery diode providing low-loss commutation during high-dI/dt transitions. Use Value: 48 ns trr and soft recovery reduce snubber losses by >30% vs. standard fast recovery diodes. |
Use Scenario: Boost diode in 22 kW AC-to-DC OBC with 650 V DC-link. IC Role / Device Role / Timing Role: High-voltage output rectifier handling 30 A average current and 210 A surge events. Use Value: 1200 V VRRM and 175 °C Tj enable compact thermal design without forced air cooling. |
| Telecom 48 V Backup PSU | Industrial UPS Inverter Bridge |
|
Use Scenario: OR-ing diode in redundant 48 V DC distribution with hot-swap capability. IC Role / Device Role / Timing Role: Low-VF, low-leakage rectifier minimizing conduction loss and standby power drain. Use Value: 1.30 V VF at 150 °C reduces power loss by ~0.4 W per diode vs. legacy 1.55 V alternatives. |
Use Scenario: Anti-parallel freewheeling diode across 1200 V SiC MOSFETs in 3-phase inverter. IC Role / Device Role / Timing Role: Snubberless commutation partner ensuring soft turn-off and voltage clamping. Use Value: Controlled QRR (5700 nC) and IRM (≤35 A) prevent destructive voltage spikes during SiC switching. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ultrafast high-voltage rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXYS MUR3012CT | TO-220AB dual-diode configuration; VF = 1.45 V @ 30 A, trr = 65 ns; higher conduction loss. | Requires dual-diode layout; less suitable for single-diode freewheeling or snubber roles. | Select when dual-anode/cathode symmetry is needed; avoid if space-constrained or single-diode topology. |
| Vishay VS-30E12-M3 | DO-201AD package; IF(AV) = 30 A but limited to 130 °C Tj; Rth(j-c) = 0.85 °C/W - higher thermal resistance. | Not suitable for high-power density designs requiring low thermal impedance or >130 °C ambient. | Prefer only for cost-sensitive, lower-power auxiliary rails where heatsinking is not critical. |
Compared with MUR3012CT and VS-30E12-M3, STTH3012D offers superior thermal performance (0.44 °C/W), lower VF at elevated temperature, and softer recovery - making it optimal for high-efficiency, high-reliability 1200 V power conversion where thermal headroom and EMI control are critical.
Availability
STTH3012D is available at Aetrix Electronics and suitable for solar inverters, EV charging stations, and telecom power supplies requiring stable component supply, long-lifecycle support, and traceable sourcing for industrial deployment.
Supply support for STTH3012D includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, microcontrollers, and automotive ICs.
STTH3012D belongs to ST's high-voltage ultrafast diode product line, engineered specifically for high-efficiency, high-reliability rectification in renewable energy, EV infrastructure, and industrial power systems.
FAQ
What is the maximum allowable case temperature for continuous operation?
The STTH3012D is rated for IF(AV) = 30 A at TC = 130 °C in TO-220AC package. Exceeding this temperature requires linear derating per datasheet Figure 2; operation above 130 °C risks exceeding 175 °C junction limit unless thermal resistance is improved via enhanced heatsinking or forced convection.
Is STTH3012D suitable as a replacement for standard fast recovery diodes in existing 1200 V designs?
Yes - its 48 ns trr, soft recovery, and 1200 V VRRM make it a drop-in upgrade for legacy FRDs like BYV26E or STTH1212, provided mechanical mounting (TO-220AC footprint) and thermal interface match. No circuit redesign is needed, but verify snubber energy reduction due to lower QRR.
Does the TO-220AC package provide electrical isolation between the tab and leads?
No - the TO-220AC package has an electrically connected tab (cathode). The tab is not insulated; it must be mounted to a heatsink using an isolating pad or shoulder washer if galvanic isolation from chassis ground is required. Insulated variants (e.g., TO-220FP) are not offered for this part number.
How does STTH3012D perform under partial-load conditions typical in telecom PSUs?
At low currents (e.g., 5 A), VF drops to ~1.05 V and trr increases slightly (~60 ns), but leakage remains <2 µA @ 125 °C. This ensures minimal standby loss and stable voltage regulation - critical for 48 V backup systems where efficiency below 10% load directly impacts battery runtime.
STTH3012D Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- TO-220-2
- Packaging:
- Tube
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 1200 V
- Current - Average Rectified (Io):
- 30A
- Voltage - Forward (Vf) (Max) @ If:
- 2.25 V @ 30 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 115 ns
- Current - Reverse Leakage @ Vr:
- 20 µA @ 1200 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AC
- Operating Temperature - Junction:
- 175°C (Max)
STTH3012D FAQ
1.How can I place an order for STTH3012D through Aetrix?
Please submit a Request for Quotation (RFQ) for STTH3012D on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STTH3012D reliable?
The price and inventory of STTH3012D are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STTH3012D is usually 5 days.
3.What payment methods are accepted for STTH3012D?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STTH3012D transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STTH3012D?
STTH3012D orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STTH3012D order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STTH3012D?
For technical support, including STTH3012D datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STTH3012D requirements.
6.How does Aetrix verify that STTH3012D is sourced from the original manufacturer or authorized distributors?
All STTH3012D products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STTH3012D meets industry standards.
7.What is the process for return or replacement of STTH3012D?
All STTH3012D units undergo pre-shipment inspection (PSI). If there is an issue with STTH3012D, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STTH3012D part is unused and in its original packaging.
Return procedure for STTH3012D:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
STTH3012D Tags
-
1N4448X-TP
Micro Commercial Co
-
1N4148WX-TP
Micro Commercial Co
-
1N4148TR
onsemi
-
MMSD4148T1G
onsemi
-
MMBD914LT3G
onsemi
-
BAS16HT1G
onsemi
-
1N914BWT
onsemi
-
BAS21LT1G
onsemi
-
LL4148
onsemi
-
BAS16LT1G
onsemi
-
MMSD914T1G
onsemi
-
BAV21W-7-F
Diodes Incorporated
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
