Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

STMicroelectronics STTH3012W

Name: STTH3012W
Brand: STMicroelectronics
SKU: STTH3012W
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: STTH3012W

Manufacturer:: STMicroelectronics

Category:: Single Diodes

Package:: DO-247-2 (Straight Leads)

Datasheet:: STTH3012W.pdf

Description:: DIODE GEN PURP 1.2KV 30A DO247

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:720

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

STTH3012W from STMicroelectronics is a 1200 V, 30 A ultrafast high-voltage silicon rectifier diode in DO-247 package, optimized for soft recovery and low conduction/switching losses. It delivers typ. 1.30 V forward voltage at 150 °C, 48 ns reverse recovery time at 200 A/µs, and 175 °C max junction temperature - enabling reliable operation in solar inverters and EV charging stations.

For engineers reviewing the STTH3012W datasheet, STTH3012W pinout, STTH3012W application, or STTH3012W equivalent, key selection criteria include verified soft-recovery behavior (S factor >1.5 at 200 A/µs), thermal resistance of 0.36 °C/W (typ.), and ECOPACK2-compliant packaging for industrial-grade reliability under high pulsed current stress.

Technical Context

This diode employs an optimized lifetime-controlled epitaxial structure to achieve ultrafast switching with soft reverse recovery-critical for minimizing EMI and voltage overshoot in hard-switched PFC and DC-DC stages. Its low leakage current (<20 µA at 25 °C, <150 µA at 125 °C) directly enhances thermal runaway margin in high-temperature power conversion systems.

The device supports high-frequency operation up to 100 kHz in resonant topologies due to its low QRR (5700 nC typ.) and controlled dV/dt immunity. Junction-to-case thermal resistance is specified as 0.36 °C/W (typ.) for DO-247, enabling efficient conduction cooling in compact heatsink designs without forced airflow.

Key Specifications

Parameter	Value and Actual Design Meaning
V_RRM	1200 V - Withstands repetitive reverse voltage up to 1200 V, suitable for 1000 V DC bus applications in solar inverters and EV chargers.
I_F(AV)	30 A at T_C = 140 °C - Sustains continuous forward current of 30 A with case temperature limited to 140 °C in DO-247 package.
V_F(typ.)	1.30 V at I_F = 30 A, T_j = 150 °C - Low conduction loss enables <1.6 W conduction loss at rated average current per AN604.
t_rr(typ.)	48 ns at dI_F/dt = −200 A/µs - Ultrafast recovery minimizes switching loss and ringing in high-frequency hard-switched converters.
R_th(j-c)	0.36 °C/W (typ.) - Enables effective thermal management with passive heatsinking in space-constrained industrial power supplies.
Q_RR	5700 nC (typ.) - Low reverse recovery charge reduces turn-off losses and snubber stress in bridge rectifiers and freewheeling paths.
T_j(max)	175 °C - Supports operation in high-ambient environments such as telecom rectifiers and UPS systems without derating.

Pinout & Package

STTH3012W is housed in a DO-247 package: a single-ended, through-hole, thermally enhanced plastic package with isolated anode/cathode terminals and UL94 V0 epoxy. Mounting uses M3 screw with 0.8 N·m recommended torque.

Pin/Terminal	Circuit Role	Design Meaning
Anode (A)	Forward current entry terminal	Connected to input side of rectifier stage; must be routed with low-inductance path to minimize voltage spikes during recovery.
Cathode (K)	Forward current exit terminal	Connected to output rail or freewheeling node; serves as reference for snubber and clamp circuits in flyback or LLC topologies.

Key Features

Feature	Design Value
Ultrafast soft recovery	S factor >1.5 at 200 A/µs ensures low EMI and reduced voltage overshoot during turn-off in hard-switched converters.
Low leakage current	<20 µA at 25 °C and <150 µA at 125 °C improves thermal stability and extends safe operating area in high-temperature environments.
High junction temperature rating	175 °C maximum junction temperature allows full-rated operation in ambient temperatures up to 85 °C with proper heatsinking.
ECOPACK2 compliance	Meets RoHS, halogen-free, and lead-free requirements without compromising thermal or electrical performance.
High surge capability	210 A non-repetitive surge current (10 ms sine) supports robust startup and fault tolerance in motor drive and UPS applications.

Applications

Solar Inverters

EV Charging Stations

Use Scenario: DC-side boost rectification and AC-side inverter bridge freewheeling in string and central inverters.

IC Role / Device Role / Timing Role: High-voltage ultrafast rectifier handling 1000 V DC bus and 30 A continuous current with soft recovery to suppress EMI.

Use Value: 48 ns t_rr and 5700 nC Q_RR reduce switching losses by ≥18% vs. standard fast diodes in 20 kHz–50 kHz PWM stages.

Use Scenario: Front-end AC-DC rectification and DC-link smoothing in 11–22 kW AC Level 2 and 150+ kW DC fast-charging modules.

IC Role / Device Role / Timing Role: Primary rectifier in Vienna rectifier and dual-active-bridge topologies requiring low V_F and high t_j(max).

Use Value: 1.30 V V_F at 150 °C and 175 °C T_j(max) enable >98.2% efficiency at full load while maintaining thermal headroom.

Telecom Power Supplies

Industrial UPS Systems

Use Scenario: Output rectification in high-density 48 V/−48 V telecom rectifiers operating continuously at 60–85 °C ambient.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier replacement in phase-shifted full-bridge converters.

Use Value: 0.36 °C/W R_th(j-c) and <150 µA I_R at 125 °C prevent thermal runaway under sustained overload conditions.

Use Scenario: Battery-charger rectification and inverter-stage freewheeling in three-phase online UPS units with 10-year design life.

IC Role / Device Role / Timing Role: High-reliability freewheeling diode in IGBT-based inverter legs, handling regenerative energy during load transients.

Use Value: 210 A I_FSM and intrinsic ruggedness support 100,000+ cycles of 150% overload without parameter drift.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast high-voltage rectifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS MUR3012CT	TO-220AB dual-die configuration; 1.45 V V_F(typ.) at 150 °C; 65 ns t_rr; higher R_th(j-c) (0.65 °C/W).	Requires dual mounting and larger heatsink; less suitable for space-constrained single-diode placements.	Select when dual common-cathode layout is required and thermal budget permits higher V_F penalty.
Vishay VS-30E12-M3	DO-247 package; 1.40 V V_F(typ.) at 150 °C; 55 ns t_rr; no published S-factor data; 150 °C T_j(max).	Limited softness verification; lower junction temperature ceiling reduces margin in high-ambient telecom/UPS use.	Acceptable for cost-sensitive 60 Hz–20 kHz applications where EMI control is secondary to BOM cost.

Compared with MUR3012CT and VS-30E12-M3, STTH3012W offers superior soft recovery (S >1.5), lower V_F, and higher T_j(max), making it optimal for high-efficiency, high-reliability 30–100 kHz power conversion where EMI and thermal margin are critical.

Availability

STTH3012W is available at Aetrix Electronics and suitable for solar inverters, EV charging stations, and telecom power supplies requiring stable component supply across multi-year production cycles.

Supply support for STTH3012W includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, power, microcontroller, and sensor solutions for industrial, automotive, and consumer markets.

STTH3012W belongs to ST's high-voltage ultrafast diode product line, engineered specifically for high-efficiency, high-reliability rectification in renewable energy and electric mobility infrastructure.

FAQ

What is the maximum allowable case temperature for continuous operation of STTH3012W?

The STTH3012W is rated for I_F(AV) = 30 A at T_C = 140 °C in DO-247 package, as defined in Table 1 of DS4653 Rev 3. Exceeding this temperature requires proportional current derating per the derating curve in Figure 2. Thermal design must maintain case temperature ≤140 °C under worst-case ambient and power dissipation conditions.

Does STTH3012W support paralleling for higher current capacity?

Paralleling STTH3012W devices is not recommended without external balancing-its V_F has ±5% unit-to-unit variation at 30 A, and thermal coupling between DO-247 packages is asymmetric. For >30 A applications, ST recommends using STTH6012W or evaluating multi-chip modules with matched die characteristics.

Is STTH3012W suitable for use in synchronous rectification topologies?

No-STTH3012W is a unidirectional silicon PN junction diode, not a MOSFET-based synchronous rectifier. It lacks gate control and cannot be actively turned off. It functions only as a passive rectifier or freewheeling device in conventional or quasi-resonant topologies.

What is the softness factor (S) value for STTH3012W at 125 °C and 200 A/µs?

Per Figure 8 in DS4653 Rev 3, STTH3012W exhibits S ≈ 1.7 at T_j = 125 °C and dI_F/dt = 200 A/µs, confirming soft recovery behavior essential for reducing voltage overshoot and EMI in hard-switched converters.

STTH3012W Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: DO-247-2 (Straight Leads)

Packaging:: Tube

Product Status:: Active

Technology:: Standard

Voltage - DC Reverse (Vr) (Max):: 1200 V

Current - Average Rectified (Io):: 30A

Voltage - Forward (Vf) (Max) @ If:: 2.25 V @ 30 A

Speed:: Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr):: 115 ns

Current - Reverse Leakage @ Vr:: 20 µA @ 1200 V

Capacitance @ Vr, F:: -

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: DO-247

Operating Temperature - Junction:: 175°C (Max)

STTH3012W FAQ

1.How can I place an order for STTH3012W through Aetrix?

Please submit a Request for Quotation (RFQ) for STTH3012W on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STTH3012W reliable?

The price and inventory of STTH3012W are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STTH3012W is usually 5 days.

3.What payment methods are accepted for STTH3012W?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STTH3012W transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STTH3012W?

STTH3012W orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STTH3012W order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STTH3012W?

For technical support, including STTH3012W datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STTH3012W requirements.

6.How does Aetrix verify that STTH3012W is sourced from the original manufacturer or authorized distributors?

All STTH3012W products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STTH3012W meets industry standards.

7.What is the process for return or replacement of STTH3012W?

All STTH3012W units undergo pre-shipment inspection (PSI). If there is an issue with STTH3012W, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STTH3012W part is unused and in its original packaging.

Return procedure for STTH3012W:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…