STMicroelectronics STTH30R04D

Overview

STTH30R04D from STMicroelectronics is an ultrafast recovery silicon diode in TO-220AC package, rated for 30 A average forward current, 400 V repetitive peak reverse voltage, and 24 ns typical reverse recovery time at 25 °C. It delivers low conduction loss (VF = 0.97 V typ. at 30 A/150 °C) and high thermal robustness (Tj max = 175 °C), enabling use in high-frequency PFC stages of industrial AC-DC power supplies.

For engineers reviewing the STTH30R04D datasheet, STTH30R04D pinout, STTH30R04D application, or STTH30R04D equivalent, key selection criteria include reverse recovery time under high dIF/dt conditions, junction-to-case thermal resistance (1.15 °C/W), leakage current stability up to 125 °C, and mechanical compatibility with TO-220AC heatsink mounting.

Technical Context

This diode employs a platinum-doped lifetime-controlled silicon structure optimized for ultrafast switching without sacrificing ruggedness. Its dynamic behavior is characterized by tightly controlled trr (24–35 ns typ.) and low IRR (10–14 A) under high-stress conditions (IF = 30 A, dIF/dt = −200 A/µs, VR = 320 V, Tj = 125 °C).

Thermal performance is defined by Rth(j-c) = 1.15 °C/W in TO-220AC configuration, supporting continuous operation at full rated current with moderate heatsinking. Static parameters-including VF drift <0.3 V across −40 to +150 °C and IR ≤150 µA at 125 °C-ensure stable conduction and blocking in demanding industrial environments.

Key Specifications

Pinout & Package

STTH30R04D uses the TO-220AC package: a 3-lead, through-hole, insulated-tab power package with center-tab cathode connection and metal tab electrically connected to cathode. Mounting torque: 0.55 N·m (recommended), max 0.7 N·m.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast recovery diode applications.

Compared with MUR3040CT, STTH30R04D offers 0.33 V lower VF and 0.35 °C/W better thermal resistance-enabling higher efficiency and smaller heatsinks. Versus VS-30EWH04FN-M3, it trades 2 ns faster trr for mechanical robustness and field-serviceable mounting, making it preferred in repairable industrial systems.

Availability

STTH30R04D is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, motor drive front-end rectifiers, and solar microinverter DC link protection requiring stable component supply and long-term manufacturing continuity.

Supply support for STTH30R04D includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, power, MCU, and sensor solutions for industrial, automotive, and consumer markets.

STTH30R04D belongs to ST's high-voltage ultrafast diode product line, engineered specifically for high-efficiency, high-reliability power conversion in industrial-grade equipment where thermal resilience and switching consistency are critical.

FAQ

Is STTH30R04D suitable for synchronous rectification?

No. STTH30R04D is a unidirectional, non-controlled PN-junction diode with no gate terminal. It cannot be actively switched like a MOSFET and therefore cannot perform synchronous rectification. Its role is strictly passive rectification or freewheeling in hard-switched topologies such as boost PFC or flyback converters.

What is the maximum recommended heatsink thermal resistance for continuous 30 A operation?

At 30 A average current and 150 °C junction temperature, power dissipation is ~29 W. With Rth(j-c) = 1.15 °C/W and maximum allowable case temperature of 120 °C, the heatsink-to-ambient thermal resistance must be ≤1.05 °C/W to maintain Tj ≤175 °C-assuming 25 °C ambient and no additional interface resistance beyond standard thermal paste.

Does STTH30R04D have avalanche capability?

No. STTH30R04D is not rated for repetitive or single-pulse avalanche energy. Its absolute maximum rating for repetitive peak reverse voltage (VRRM) is 400 V, and operation above this value-even briefly-may cause irreversible breakdown. External clamping or snubbing is required in circuits prone to voltage overshoot.

Can STTH30R04D replace STTH30L06 in a 600 V design?

No. STTH30L06 has VRRM = 600 V and trr = 35 ns (typ.), while STTH30R04D is rated only to 400 V. Substituting it in a 600 V application risks catastrophic failure during line surges or inductive kickback. The "R" suffix denotes 400 V rating; "L" indicates 600 V-these are not interchangeable without full system revalidation.