STMicroelectronics STTH30R04G

Overview

STTH30R04G from STMicroelectronics is an ultrafast recovery silicon rectifier diode in D²PAK (TO-263) package, rated for 30 A average forward current, 400 V repetitive peak reverse voltage, and 24 ns typical reverse recovery time at 25°C. It delivers low conduction loss (VF = 0.97 V typ. at 30 A/150°C), low leakage (15 µA max at 25°C), and high thermal robustness (Tj(max) = 175°C), enabling use in high-frequency PFC stages of industrial SMPS.

For engineers reviewing the STTH30R04G datasheet, STTH30R04G pinout, STTH30R04G application, or STTH30R04G equivalent, key selection criteria include its 1.15 °C/W junction-to-case thermal resistance, dIF/dt-dependent trr performance (24–100 ns), rugged surge rating (300 A IFSM), and ECOPACK®2-compliant lead-free construction.

Technical Context

This diode employs a platinum-doped lifetime-controlled silicon structure to achieve precise control over minority carrier lifetime, enabling ultrafast recovery without sacrificing forward voltage or leakage trade-offs. Its dynamic behavior is characterized by low QRR (e.g., ~200 nC at dIF/dt = 100 A/µs) and stable IRM (10–14 A) under high dIF/dt and elevated junction temperature (125°C).

The device is optimized for hard-switched topologies operating up to 100 kHz, where low tfr (500 ns) and controlled VFP (2.9 V) minimize turn-on overshoot and EMI generation. Thermal design leverages the D²PAK's low Rth(j-c), requiring only moderate copper area (≥8.9 cm² per Fig. 11) for full 30 A derating at Tc = 120°C.

Key Specifications

Pinout & Package

The STTH30R04G is housed in a surface-mount D²PAK (TO-263) package with isolated tab, designed for high-current conduction and efficient thermal transfer via the exposed drain pad soldered to large PCB copper areas.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast recovery diode applications.

Compared with MUR3040CT and VS-30ETH04-M3, STTH30R04G offers the lowest combined conduction–switching loss profile (0.97 V VF + 24 ns trr) and best thermal performance (1.15 °C/W), making it optimal for space-constrained, high-efficiency industrial converters demanding long-term reliability.

Availability

STTH30R04G is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, server rectification, motor drive front ends, and renewable energy converters requiring stable component supply, consistent parametric performance, and long-lifecycle support.

Supply support for STTH30R04G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

The STTH series targets high-reliability power conversion, with STTH30R04G specifically engineered for ultrafast, high-current rectification in demanding industrial and telecom power systems where thermal resilience and dynamic consistency are critical.

FAQ

What is the maximum recommended mounting torque for the STTH30R04G D²PAK package?

The D²PAK package does not specify a mechanical mounting torque like TO-220AC. Instead, reliable thermal and electrical connection depends on full-surface solder reflow of the exposed cathode tab to ≥2 oz copper with ≥8.9 cm² thermal pad area (per Figure 11). Hand-soldering is not recommended due to thermal mass mismatch and void risk.

Can STTH30R04G replace STTH30R04W in a DO-247 footprint?

No - STTH30R04G uses D²PAK (TO-263) with 3 leads and an exposed cathode tab, while STTH30R04W uses DO-247 with 2 leads and no tab. The packages are mechanically and thermally incompatible; board redesign and thermal validation are required for substitution.

How does trr vary with dIF/dt and temperature?

trr increases with lower dIF/dt (e.g., 78 ns at 15 A/µs vs. 24 ns at 200 A/µs) and rises with junction temperature (e.g., +15% at 125°C vs. 25°C). These dependencies are quantified in Figures 5 and 7 of the datasheet and must be modeled in SPICE simulations for accurate loss estimation.

Is STTH30R04G suitable for synchronous rectification?

No - STTH30R04G is a unidirectional, non-controllable PN junction diode. It cannot be actively gated like a MOSFET and therefore cannot function as a synchronous rectifier. It serves as a passive, ultrafast freewheeling or output rectifier in conventional topologies.