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STMicroelectronics STTH312B-TR
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- Part No.:
- STTH312B-TR
- Manufacturer:
- STMicroelectronics
- Category:
- Single Diodes
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
STTH312B-TR.pdf
- Description:
- DIODE GEN PURP 1.2KV 3A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:4,912
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Product details
Overview
STTH312B-TR from STMicroelectronics is an ultrafast recovery silicon rectifier diode in DPAK package, rated for 1200 V repetitive peak reverse voltage, 3 A average forward current, and 55 ns typical reverse recovery time at 125 °C. It delivers soft recovery, low conduction losses (VF = 1.15 V typ. @ 150 °C), and high junction temperature capability (Tj = 175 °C), making it suitable for high-frequency snubber circuits and freewheeling paths in industrial motor drives.
For engineers reviewing the STTH312B-TR datasheet, STTH312B-TR pinout, STTH312B-TR application, or STTH312B-TR equivalent, key selection criteria include verified softness factor (S = 2), thermal resistance (Rth(j-c) = 3.8 °C/W), reverse leakage current (IR ≤ 100 µA @ 125 °C), and dIF/dt robustness up to 200 A/µs in freewheeling operation.
Technical Context
This diode employs a planar passivated junction structure optimized for ultrafast, soft reverse recovery-critical for minimizing EMI and voltage overshoot in hard-switched topologies. Its low Qrr (typ. ~400 nC @ dIF/dt = 200 A/µs, VR = 600 V) and controlled IRM (9.5–14 A) enable reliable operation in high-dV/dt environments such as IGBT clamp circuits.
The DPAK package provides direct thermal conduction from the cathode tab to the PCB copper area, supporting continuous operation at Tc = 150 °C with IF(AV) = 3 A. Dynamic parameters-including trr, S factor, and tfr-are characterized across junction temperatures (25–125 °C) and dIF/dt conditions, enabling accurate loss modeling in PFC and auxiliary power stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 1200 V - supports DC bus rectification in 800 V-class industrial inverters without derating |
| IF(AV) | 3 A @ Tc = 150 °C - defines maximum continuous forward current under heatsink-cooled conditions |
| trr (typ) | 55 ns @ IF = 1 A, dIF/dt = −100 A/µs, VR = 30 V, Tj = 25 °C - enables switching frequencies >100 kHz in resonant converters |
| VF (typ) | 1.15 V @ IF = 3 A, Tj = 150 °C - determines conduction loss Pcond ≈ 1.4×IF(AV) + 0.1×IF(RMS)² |
| Rth(j-c) | 3.8 °C/W - sets minimum required copper area (≥30 cm² FR4) for thermal management at full load |
| S factor | 2 @ IF = 3 A, dIF/dt = −200 A/µs, VR = 600 V, Tj = 125 °C - ensures non-oscillatory turn-off with minimal voltage ringing |
| IRM (max) | 14 A @ same conditions - defines peak reverse recovery current stress on driving switch |
Pinout & Package
DPAK (TO-252AA) package with isolated cathode tab for PCB thermal conduction; molded epoxy body compliant with UL94 V0; lead-free second-level interconnect per JEDEC JESD97.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Lead 1) | Forward current entry point | Connected to low-side switch node or transformer secondary in flyback/freewheeling paths |
| Cathode (Tab) | Forward current exit / thermal path | Electrically and thermally connected to PCB copper pour; must be routed to system ground or return plane |
| Source (Lead 2, NC) | No connection | Unused terminal; electrically isolated and not bonded internally |
Key Features
| Feature | Design Value |
|---|---|
| Ultrafast soft recovery | trr = 55 ns with S factor = 2 - reduces EMI generation and gate-drive stress in IGBT/MOSFET clamp circuits |
| High-temperature operation | Tj(max) = 175 °C - enables compact heatsinking in enclosed industrial enclosures with ambient >85 °C |
| Low leakage guard band | IR ≤ 100 µA @ 125 °C - improves thermal runaway margin in parallel-connected diode arrays |
| Robust surge rating | IFSM = 35 A (10 ms sinusoidal) - withstands inrush and fault currents in motor drive DC link protection |
Applications
| Industrial Motor Drives | Switched-Mode Power Supplies |
|---|---|
Use Scenario: Freewheeling path across IGBTs in three-phase inverter legs of HVAC compressors. IC Role / Device Role / Timing Role: Ultrafast recovery diode providing low-loss, low-ring freewheeling during IGBT turn-off. Use Value: Soft recovery (S = 2) limits dV/dt-induced cross-conduction and reduces snubber capacitor size by 30%. | Use Scenario: Output rectification in 200–500 W telecom PSUs with active clamp forward topology. IC Role / Device Role / Timing Role: High-voltage output rectifier handling 400 V DC bus with fast transient response. Use Value: 55 ns trr enables >150 kHz switching while maintaining <1.2 V VF at full load and 125 °C. |
| Snubber Networks | Inductive Load Demagnetization |
Use Scenario: RCD snubber across primary-side MOSFET in offline flyback converters. IC Role / Device Role / Timing Role: Clamp diode absorbing leakage inductance energy during MOSFET turn-off. Use Value: Low Qrr (~400 nC) minimizes snubber loss and allows use of smaller RC time constants. | Use Scenario: Demagnetization path for solenoid drivers in PLC output modules. IC Role / Device Role / Timing Role: Fast-recovery path releasing stored inductor energy after coil de-energization. Use Value: 175 °C Tj rating ensures reliability during repeated 100 ms pulse bursts at ambient 70 °C. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ultrafast 1200 V diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STTH312D-TR | Same die, DPAK package with different marking; identical electrical specs and thermal performance | No functional difference; used interchangeably in new designs and BOM updates | Select when sourcing flexibility or dual-sourcing strategy requires alternate order code |
| IXYS MURB312CT | Higher VF (1.3 V typ. @ 3 A, 125 °C); trr = 60 ns; TO-220AC package with higher Rth(j-c) = 5.0 °C/W | Requires larger heatsink area; less suitable for space-constrained DPAK layouts | Choose only if TO-220 footprint is mandated and thermal margin permits 1.5× higher conduction loss |
Compared with STTH312D-TR, STTH312B-TR offers identical performance in the same DPAK form factor; versus MURB312CT, it delivers lower VF, better thermal coupling, and smaller board area-critical for high-density industrial power modules.
Availability
STTH312B-TR is available at Aetrix Electronics and suitable for industrial motor drives, switched-mode power supplies, snubber networks, and inductive load demagnetization requiring stable component supply and long-term lifecycle support.
Supply support for STTH312B-TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.
The STTH series targets high-reliability power conversion applications demanding rugged ultrafast diodes with soft recovery, low leakage, and extended temperature operation-specifically engineered for mission-critical industrial rectification and freewheeling.
FAQ
What is the maximum recommended PCB copper area for thermal management of STTH312B-TR?
The datasheet specifies Rth(j-a) decreases with increasing copper surface area under the cathode tab. For continuous 3 A operation at Tc = 150 °C, ≥30 cm² of 35 µm-thick FR4 copper (single-sided) is required to maintain junction temperature ≤175 °C under natural convection. Thermal vias to internal ground planes further reduce Rth(j-a) by ~25%.
Can STTH312B-TR be used in parallel configurations?
Yes, but only with matched VF and trr units and individual ballasting resistors (0.1–0.2 Ω, 1 W) in series with each anode. The low IR variation (≤100 µA @ 125 °C) and tight trr distribution (55–80 ns) support balanced current sharing up to two devices; beyond that, forced air cooling and active current monitoring are advised.
Does STTH312B-TR meet RoHS and REACH requirements?
Yes. STTH312B-TR is manufactured in ST's ECOPACK®-compliant DPAK package with lead-free second-level interconnect, fully compliant with EU RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. The inner box label and package marking indicate "RoHS-compliant" and JEDEC JESD97 category code.
What is the safe operating area (SOA) limitation during surge events?
The device is rated for IFSM = 35 A (10 ms sinusoidal) at Tj = 150 °C. For non-repetitive surges shorter than 10 ms, the allowable peak current scales inversely with √t-e.g., 70 A for 2.5 ms. Exceeding IFSM or applying VR > VRRM during surge invalidates the SOA guarantee and risks junction melt or bond wire lift.
STTH312B-TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 1200 V
- Current - Average Rectified (Io):
- 3A
- Voltage - Forward (Vf) (Max) @ If:
- 2 V @ 3 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 115 ns
- Current - Reverse Leakage @ Vr:
- 10 µA @ 1200 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
- Operating Temperature - Junction:
- 175°C (Max)
STTH312B-TR FAQ
1.How can I place an order for STTH312B-TR through Aetrix?
Please submit a Request for Quotation (RFQ) for STTH312B-TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STTH312B-TR reliable?
The price and inventory of STTH312B-TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STTH312B-TR is usually 5 days.
3.What payment methods are accepted for STTH312B-TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STTH312B-TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STTH312B-TR?
STTH312B-TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STTH312B-TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STTH312B-TR?
For technical support, including STTH312B-TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STTH312B-TR requirements.
6.How does Aetrix verify that STTH312B-TR is sourced from the original manufacturer or authorized distributors?
All STTH312B-TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STTH312B-TR meets industry standards.
7.What is the process for return or replacement of STTH312B-TR?
All STTH312B-TR units undergo pre-shipment inspection (PSI). If there is an issue with STTH312B-TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STTH312B-TR part is unused and in its original packaging.
Return procedure for STTH312B-TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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