STMicroelectronics STTH3L06B

Overview

STTH3L06B from STMicroelectronics is an ultrafast high-voltage silicon rectifier diode using Turbo 2 technology, rated for 600 V repetitive peak reverse voltage and 3 A average forward current. It features a typical forward voltage drop of 0.85 V at 150 °C and 3 A, 60 ns typical reverse recovery time, and low leakage (≤100 µA at 150 °C), optimized for boost diodes in discontinuous/critical-mode PFC circuits.

For engineers reviewing the STTH3L06B datasheet, STTH3L06B pinout, STTH3L06B application, or STTH3L06B equivalent, key selection criteria include conduction loss modeling (P = 0.89 × IF(AV) + 0.055 × IF²(RMS)), thermal resistance (20 °C/W junction-to-lead in DO-201AD), softness factor stability across dIF/dt, and platinum-doped low-leakage performance at elevated junction temperatures.

Technical Context

This device implements ST's Turbo 2 600 V planar epitaxial process with platinum diffusion for controlled carrier lifetime, enabling ultrafast switching (trr = 60 ns typ.) while maintaining low VF and low IR. Its dynamic behavior is characterized by soft recovery (S-factor ≥0.8 at 100 A/µs) and stable trr over temperature (±15% variation from 25 to 125 °C).

The diode operates up to 175 °C junction temperature and supports surge currents up to 70 A (10 ms, DO-201AD). Thermal design relies on validated Rth(j-l) = 20 °C/W (DO-201AD, L = 10 mm) and Rth(j-a) = 75 °C/W (DO-201AD, FR4 PCB), with copper surface area and lead length directly impacting transient thermal impedance.

Key Specifications

Pinout & Package

STTH3L06B is supplied in the DO-201AD axial-leaded package (ECOPACK® compliant, UL94 V0 epoxy), with cathode identified by a band. The two-terminal device has no internal complexity-Anode and Cathode are the only terminals, mounted via axial leads bent per AN1471.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast high-voltage rectifier applications.

Compared with STTH3R06 and MUR3060CT, STTH3L06B uniquely balances ultrafast recovery (60 ns), low VF (0.85 V), and low high-temperature leakage (100 µA), making it optimal for thermally constrained CrCM PFC and high-reliability freewheeling applications where both efficiency and long-term stability matter.

Availability

STTH3L06B is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, server & telecom rectification, LED driver power stages, and motor drive snubber networks requiring stable component supply and long-lifecycle support.

Supply support for STTH3L06B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

The STTH series belongs to ST's high-voltage rectifier product line, engineered specifically for high-efficiency, high-reliability power conversion in PFC, SMPS, and motor control applications where thermal robustness and dynamic performance are critical.

FAQ

What is the maximum allowable lead temperature during soldering for STTH3L06B?

The DO-201AD package supports wave soldering with peak lead temperature ≤ 260 °C for 10 seconds, per JEDEC J-STD-020. Hand soldering must not exceed 350 °C for 3 seconds per lead. Exceeding these limits risks epoxy cracking or bond wire damage, degrading Rth(j-l) and long-term IR stability.

Can STTH3L06B be used in place of a Schottky diode in a 12 V output rectifier?

No - STTH3L06B is a PN junction diode with 0.85 V VF minimum, unsuitable for low-voltage (<48 V) outputs where Schottky VF (0.3–0.5 V) provides decisive efficiency advantage. Its 600 V rating and platinum doping target high-voltage, high-temperature applications, not low-VF optimization.

How does the softness factor affect EMI in a PFC boost converter?

A softness factor ≥0.8 ensures gradual current decay during reverse recovery, reducing di/dt-induced voltage spikes across stray inductance. This lowers broadband EMI amplitude by 10–15 dB in the 30–100 MHz range, easing compliance with CISPR-22 Class B limits without additional ferrite beads or shielding.

Is there a recommended minimum copper pour area for the cathode pad in DO-201AD layout?

Yes - ST recommends ≥4 cm² total copper area connected to the cathode lead (including inner-layer planes) on FR4 PCBs to achieve the specified Rth(j-a) = 75 °C/W. Reducing this area below 2 cm² increases thermal resistance by >30%, risking Tj exceedance at full IF(AV) in still-air conditions.