STMicroelectronics STTH3L06RL

Overview

STTH3L06RL from STMicroelectronics is an ultrafast high-voltage silicon rectifier diode in DO-201AD package, rated for 600 V repetitive peak reverse voltage, 3 A average forward current, and 60 ns typical reverse recovery time. It uses platinum-doped Turbo 2 technology to achieve low leakage (100 µA max at 150 °C) and low forward voltage (0.85 V typ. at 150 °C), making it ideal as a boost diode in discontinuous-mode PFC circuits.

For engineers reviewing the STTH3L06RL datasheet, STTH3L06RL pinout, STTH3L06RL application, or STTH3L06RL equivalent, key selection criteria include its ultrafast trr, low thermal resistance (20 °C/W junction-to-lead), soft recovery behavior, and suitability for high-frequency switching power supplies operating up to 175 °C junction temperature.

Technical Context

This device implements ST's Turbo 2 600 V planar epitaxial process with platinum diffusion for controlled carrier lifetime, enabling fast, soft reverse recovery with minimal ringing. Its dynamic performance is characterized under defined dIF/dt conditions (–50 A/µs) and VR = 30 V, yielding trr = 60 ns (typ.) and softness factor >1.0 across 20–200 A/µs range.

The diode operates with a maximum junction temperature of 175 °C and exhibits low conduction loss modeled by P = 0.89 × IF(AV) + 0.055 × IF²(RMS). Thermal design is supported by validated Rth(j-l) = 20 °C/W (DO-201AD, L = 10 mm) and Rth(j-a) = 75 °C/W (free-air).

Key Specifications

Pinout & Package

STTH3L06RL is housed in the axial DO-201AD package with cathode band marking. Leads are tinned and compliant with ECOPACK® environmental standards. Package dimensions: length 25.4 mm, body diameter 5.3 mm, lead diameter 1.3 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast high-voltage rectifier applications.

Compared with STTH3R06 and UF3A60, STTH3L06RL delivers the best balance of low VF (0.85 V), soft recovery, and stable high-temperature leakage - critical for thermally demanding PFC and industrial power supply designs where reliability and efficiency coexist.

Availability

STTH3L06RL is available at Aetrix Electronics and suitable for discontinuous-mode PFC circuits, high-frequency SMPS output rectification, and freewheeling applications requiring stable component supply, consistent parametric performance, and long-term industrial lifecycle support.

Supply support for STTH3L06RL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

STTH3L06RL belongs to ST's Turbo 2 ultrafast rectifier product line, engineered specifically for high-efficiency, high-reliability AC-DC conversion in energy-efficient power supplies and industrial motor drives.

FAQ

What is the maximum junction temperature and how does it affect reliability?

The STTH3L06RL has a maximum junction temperature (Tj) of 175 °C. Operating near this limit requires careful thermal design-its Rth(j-l) of 20 °C/W means a 3 A load at 100 °C lead temperature results in ~115 °C junction rise. Exceeding 175 °C accelerates degradation of the platinum-doped junction and increases IR exponentially, risking premature failure in sustained high-power operation.

Is STTH3L06RL suitable for use in synchronous rectification topologies?

No-STTH3L06RL is a unidirectional, passive silicon rectifier diode and cannot be actively controlled like a MOSFET. It lacks gate terminals and cannot replace synchronous rectifiers. Its role is strictly limited to freewheeling, boost, or output rectification in non-synchronous topologies where passive conduction and fast, soft recovery are required.

How does the platinum doping impact reverse recovery behavior?

Platinum doping controls minority carrier lifetime in the silicon base region, producing a predictable, soft reverse recovery waveform with minimal current tail and low di/dt-induced voltage overshoot. This reduces EMI generation and stress on adjacent switches-critical in high-density PFC and SMPS designs where layout parasitics amplify ringing effects from abrupt recovery.

Can STTH3L06RL be used in place of STTH3L06 (ammo pack) without derating?

Yes-STTH3L06RL and STTH3L06 share identical electrical and thermal specifications, differing only in packaging (tape-and-reel vs. ammo pack). No derating is required. Both use the same DO-201AD die and construction; RL suffix denotes reel packaging for automated assembly, with identical 1.12 g unit weight and 600-unit base quantity per reel.