Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

STMicroelectronics STTH3R02S

Part No.:
STTH3R02S
Manufacturer:
STMicroelectronics
Category:
Single Diodes
Package:
DO-214AB, SMC
Datasheet:
AetrixSTTH3R02S.pdf
Description:
DIODE GEN PURP 200V 3A SMC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,889

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

STTH3R02S from STMicroelectronics is an ultrafast recovery silicon diode in SMC package, rated for 200 V repetitive peak reverse voltage and 3 A average forward current, with typical reverse recovery time of 16 ns at 125 °C and 100 A/µs dIF/dt, optimized for high-frequency inverters and free-wheeling in low-voltage switching power supplies.

For engineers reviewing the STTH3R02S datasheet, STTH3R02S pinout, STTH3R02S application, or STTH3R02S equivalent, key selection criteria include its 175 °C maximum junction temperature, 0.70–0.80 V forward voltage at 150 °C/3 A, low conduction losses (P = 0.68 × IF(AV) + 0.04 × IF²(RMS)), and SMC thermal resistance of 20 °C/W (junction-to-case).

Technical Context

This diode employs ST's planar platinum-doped technology to achieve negligible switching losses and low forward/reverse recovery times. Its dynamic performance is characterized under controlled dIF/dt conditions (up to −200 A/µs) and reverse voltages up to 160 V, with IRM peaking at 4.5 A and QRR varying with dIF/dt and junction temperature.

The device operates across −65 °C to +175 °C storage and junction temperature ranges, with thermal impedance profiles validated for SMC mounting on 1 cm² copper area. It exhibits stable VF drift (0.70 V typ. at 150 °C/3 A) and low leakage (<30 µA at 125 °C/VRRM), supporting reliable operation in thermally demanding base-drive and SMPS circuits.

Key Specifications

Parameter Value and Actual Design Meaning
VRRM 200 V - Withstands repetitive reverse voltage up to 200 V without breakdown, enabling use in 12–48 V DC bus systems with safety margin.
IF(AV) 3 A - Sustains 3 A average forward current with lead temperature limited to 110 °C in SMC package, suitable for continuous conduction mode designs.
trr (typ) 16 ns - Ultrafast reverse recovery at Tj = 125 °C, dIF/dt = −100 A/µs, VR = 30 V, minimizing switching loss and EMI in >100 kHz converters.
VF (typ) 0.70 V - Forward voltage drop at 3 A and 150 °C, directly reducing conduction loss and thermal stress in high-duty-cycle applications.
Rth(j-c) 20 °C/W - Junction-to-case thermal resistance in SMC package, enabling efficient heat transfer to PCB copper or heatsink for sustained 3 A operation.
Tj (max) 175 °C - Maximum allowable junction temperature, supporting operation in enclosed industrial environments without forced cooling.
IRM (max) 4.5 A - Peak reverse recovery current at IF = 3 A, dIF/dt = −200 A/µs, VR = 160 V, Tj = 125 °C - critical for snubber sizing and EMI filter design.

Pinout & Package

STTH3R02S is housed in the SMC (DO-214AB) surface-mount package, featuring a cathode band marking and two terminals designed for high-current PCB trace routing and thermal pad soldering. The package meets UL94 V0 flammability rating and supports conduction-based cooling.

Pin/Terminal Circuit Role Design Meaning
Anode (A) Forward current entry point Connected to low-side switch node or return path; must handle 75 A non-repetitive surge and sustain 3 A RMS under thermal constraints.
Cathode (K) Forward current exit / reverse blocking terminal Marked by band; ties to positive rail or inductive load; withstands 200 V reverse bias and dissipates recovery energy during turn-off.

Key Features

Feature Design Value
Ultrafast trr 16 ns typical at 125 °C enables >500 kHz switching in resonant LLC and synchronous rectifier topologies without excessive loss.
Low VF drift with temperature 0.70 V at 150 °C/3 A ensures predictable conduction loss across industrial temperature range, simplifying thermal derating.
High Tj rating 175 °C maximum junction temperature allows operation in sealed enclosures or near heat-generating components without active cooling.
ECOPACK® compliant Meets RoHS and halogen-free requirements per ST's ECOPACK® Grade 2, supporting environmentally regulated industrial and consumer designs.
Robust surge capability 75 A IFSM (10 ms, sinusoidal) provides margin against inrush and fault currents in motor drive and UPS output stages.

Applications

DC-DC Converter Output Rectification Motor Drive Free-Wheeling Diode

Use Scenario: Used as secondary-side rectifier in isolated 24 V input, 5–12 V output flyback or forward converters operating at 200–500 kHz.

IC Role / Device Role / Timing Role: Fast-recovery diode conducting during transformer reset phase; blocks reverse voltage during primary switch conduction.

Use Value: 16 ns trr and 0.70 V VF at 150 °C reduce switching loss and improve efficiency by ≥1.2% vs. standard FRD alternatives at full load.

Use Scenario: Mounted across brushed DC motor terminals or H-bridge leg to clamp inductive kickback during PWM commutation.

IC Role / Device Role / Timing Role: Freewheeling path for back-EMF current; conducts only during switch off-time with minimal voltage overshoot.

Use Value: Low IRM (4.5 A) and fast tfr (40 ns) limit voltage spikes to <25 V above supply rail, protecting MOSFETs without external snubbers.

SMPS Polarity Protection High-Frequency Inverter Clamping

Use Scenario: Placed in series with 12–48 V input rails to prevent damage from reverse battery connection in telecom power modules.

IC Role / Device Role / Timing Role: Forward-conducting protection element; blocks reverse polarity with 200 V VRRM margin and low VF drop.

Use Value: 0.89 V VF at 3 A/25 °C minimizes insertion loss (<2.7 W), avoiding thermal runaway in compact 3 A-rated inputs.

Use Scenario: Integrated into half-bridge inverter output stage (e.g., solar microinverter) to absorb reactive energy during zero-crossing transitions.

IC Role / Device Role / Timing Role: Clamp diode conducting transient reverse current during dead-time; recovers before next switching edge.

Use Value: Stable trr ≤30 ns across −40 to +125 °C ensures consistent clamping timing and prevents shoot-through risk in 100 kHz+ inverters.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast recovery diode applications.

Alternative Part Technical Difference Application Difference Selection Advice
STTH3L02S Lower VF (0.65 V typ. @ 3 A/150 °C) but higher trr (25 ns typ.), same SMC package and 200 V rating. Better conduction loss, worse switching loss - preferred in low-frequency, high-current applications where thermal budget dominates. Select when average power dissipation >2.5 W and switching frequency <100 kHz; avoid above 250 kHz due to increased recovery loss.
VS-3EYH02-M3 Same 200 V/3 A rating, trr = 20 ns (25 °C), VF = 0.82 V (3 A/25 °C); TO-277 package (not SMC), Rth(j-c) = 25 °C/W. Higher thermal resistance and larger footprint; requires different PCB layout and heatsinking strategy. Choose only if legacy TO-277 footprint compatibility is required; otherwise STTH3R02S offers superior thermal performance and space efficiency.

Compared with STTH3L02S and VS-3EYH02-M3, STTH3R02S delivers the best balance of ultrafast recovery (16 ns), low VF stability over temperature, and SMC thermal efficiency (20 °C/W), making it optimal for compact, high-frequency, thermally constrained power stages.

Availability

STTH3R02S is available at Aetrix Electronics and suitable for high-frequency DC-DC converters, motor drive freewheeling circuits, and polarity protection applications requiring stable component supply, RoHS compliance, and long-term industrial lifecycle support.

Supply support for STTH3R02S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, power, MCU, and sensor solutions for industrial, automotive, and consumer markets.

STTH3R02S belongs to ST's ultrafast recovery diode product line, engineered specifically for high-efficiency, high-frequency switching power conversion where low conduction loss and minimal reverse recovery charge are critical.

FAQ

What is the maximum recommended PCB copper area for optimal thermal performance of STTH3R02S?

The SMC package achieves its specified 20 °C/W junction-to-case thermal resistance when mounted on ≥1 cm² of 35 µm thick copper per lead, as validated in Figure 13 of the datasheet. Using less than 0.5 cm² increases Rth(j-a) by >40%, risking thermal runaway at full 3 A load. Thermal vias under the cathode pad further improve dissipation.

Does STTH3R02S support reflow soldering, and what is the peak profile limit?

Yes, STTH3R02S is qualified for lead-free reflow per JEDEC J-STD-020. The maximum peak temperature is 260 °C for ≤30 seconds, with ramp rates ≤3 °C/s pre- and post-peak. Lead temperature must not exceed 230 °C for 10 s at 4 mm from case, per Table 2 absolute ratings.

How does trr vary with junction temperature, and why does it matter for design?

trr decreases from ~30 ns at 25 °C to ~16 ns at 125 °C (Figure 11), improving switching speed but increasing dV/dt stress. This inverse temperature dependence means worst-case recovery loss occurs at cold start, while EMI peaks at elevated temperature - both must be validated across the full operating range.

Can STTH3R02S replace a standard FR107 in a 24 V, 100 kHz flyback converter?

Yes, but only if layout accommodates SMC footprint and thermal management is verified. STTH3R02S reduces trr from 500 ns (FR107) to 16 ns, cutting switching loss by >90%, yet its lower VF (0.7 V vs. 1.1 V) also lowers conduction loss. However, its higher dIF/dt sensitivity requires careful snubber tuning to avoid ringing.

STTH3R02S Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
-
Package/Case:
DO-214AB, SMC
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
Standard
Voltage - DC Reverse (Vr) (Max):
200 V
Current - Average Rectified (Io):
3A
Voltage - Forward (Vf) (Max) @ If:
1 V @ 3 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
30 ns
Current - Reverse Leakage @ Vr:
3 µA @ 200 V
Capacitance @ Vr, F:
-
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SMC
Operating Temperature - Junction:
175°C (Max)

STTH3R02S FAQ

1.How can I place an order for STTH3R02S through Aetrix?

Please submit a Request for Quotation (RFQ) for STTH3R02S on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STTH3R02S reliable?

The price and inventory of STTH3R02S are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STTH3R02S is usually 5 days.

3.What payment methods are accepted for STTH3R02S?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STTH3R02S transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STTH3R02S?

STTH3R02S orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STTH3R02S order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STTH3R02S?

For technical support, including STTH3R02S datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STTH3R02S requirements.

6.How does Aetrix verify that STTH3R02S is sourced from the original manufacturer or authorized distributors?

All STTH3R02S products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STTH3R02S meets industry standards.

7.What is the process for return or replacement of STTH3R02S?

All STTH3R02S units undergo pre-shipment inspection (PSI). If there is an issue with STTH3R02S, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STTH3R02S part is unused and in its original packaging.

Return procedure for STTH3R02S:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

STTH3R02S Tags

  • STTH3R02S
  • STTH3R02S PDF
  • STTH3R02S Datasheet
  • STTH3R02S Specifications
  • STTH3R02S Images
  • STMicroelectronics
  • STMicroelectronics STTH3R02S
  • Buy STTH3R02S
  • STTH3R02S Price
  • STTH3R02S Distributor
  • STTH3R02S Supplier
  • STTH3R02S Wholesale
Related Products
1N4448X-TP
1N4448X-TP

Micro Commercial Co

1N4148WX-TP
1N4148WX-TP

Micro Commercial Co

1N4148TR
1N4148TR

onsemi

MMSD4148T1G
MMSD4148T1G

onsemi

MMBD914LT3G
MMBD914LT3G

onsemi

BAS16HT1G
BAS16HT1G

onsemi

1N914BWT
1N914BWT

onsemi

BAS21LT1G
BAS21LT1G

onsemi

LL4148
LL4148

onsemi

BAS16LT1G
BAS16LT1G

onsemi

MMSD914T1G
MMSD914T1G

onsemi

BAV21W-7-F
BAV21W-7-F

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER