STMicroelectronics STTH4R02

Overview

STTH4R02 from STMicroelectronics is an ultrafast recovery silicon rectifier diode optimized for high-frequency switching applications including low-voltage inverters, freewheeling paths, and polarity protection circuits. It features a 200 V repetitive peak reverse voltage (V_RRM), 4 A average forward current (I_F(AV)), 16 ns typical reverse recovery time (t_rr), 0.76 V typical forward voltage at 150 °C, and DPAK/SMB/SMC packaging options.

For engineers reviewing the STTH4R02 datasheet, STTH4R02 pinout, STTH4R02 application, or STTH4R02 equivalent, key selection criteria include ultrafast t_rr performance under high dI/dt conditions, thermal robustness up to 175 °C junction temperature, low conduction loss profile, and package-specific thermal resistance (e.g., R_th(j–c) = 3.5 °C/W in DPAK).

Technical Context

The STTH4R02 employs ST's planar platinum-doped technology to achieve tightly controlled minority carrier lifetime, enabling ultrafast recovery with minimal tail current. Its dynamic behavior is characterized by low Q_rr and I_RM, with t_rr ranging from 16 ns (dI/dt = –100 A/µs) to 24 ns (dI/dt = –50 A/µs) at 25 °C.

Thermal design is supported by package-specific R_th values: 3.5 °C/W (junction-to-case, DPAK), 20 °C/W (junction-to-lead, SMB/SMC). The device operates up to 175 °C junction temperature and maintains stable V_F and I_R across –65 to +175 °C storage range.

Key Specifications

Pinout & Package

STTH4R02 is available in three surface-mount packages: DPAK (TO-252), SMB (DO-214AA), and SMC (DO-214AB). All variants feature a single cathode band marking and two-terminal configuration. Thermal pad in DPAK is electrically connected to the cathode.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast recovery diode applications.

Compared with STTH3L06 and ES1J, the STTH4R02 delivers superior high-frequency efficiency due to its 16 ns t_rr and 4 A rating in thermally enhanced DPAK, making it optimal for compact, high-power-density 200 V-class switching stages where thermal management and EMI are critical.

Availability

STTH4R02 is available at Aetrix Electronics and suitable for DC–DC converter output rectification, freewheeling diode in motor drives, and polarity protection in power inputs requiring stable component supply and long-term industrial lifecycle support.

Supply support for STTH4R02 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

The STTH series targets high-efficiency power conversion with ultrafast soft-recovery characteristics, specifically engineered for high-frequency SMPS, motor control, and renewable energy inverters where low Q_rr and thermal resilience are essential.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The STTH4R02 has a maximum rated junction temperature of 175 °C, verified per absolute maximum ratings in Table 2. Continuous operation at this limit requires thermal design ensuring case temperature remains ≤160 °C for DPAK (I_F(AV) = 4 A) and appropriate copper area per Figure 12–14. Derating is mandatory above 160 °C case temperature.

Does STTH4R02 have a built-in thermal pad, and how should it be connected?

Only the DPAK variant (order code STTH4R02B-TR) includes an exposed thermal pad electrically connected to the cathode. It must be soldered to a minimum 100 mm² copper pour with ≥4 thermal vias (0.3 mm diameter) to internal ground or heat-spreading planes. SMB and SMC variants lack thermal pads and rely on lead-frame conduction.

How does reverse recovery time vary with dI/dt and temperature?

t_rr decreases with higher dI/dt: 24 ns at –50 A/µs and 16 ns at –100 A/µs (25 °C). At 125 °C, t_rr increases by ~25% versus 25 °C baseline. These values are measured per Table 5 test conditions and confirmed in Figure 9, supporting accurate loss modeling across operating conditions.

Is STTH4R02 suitable for synchronous rectification replacement in 48 V output rails?

No - STTH4R02 is a unidirectional PN junction diode, not a MOSFET-based synchronous rectifier. While its 0.76 V V_F and 16 ns t_rr reduce losses versus standard fast diodes, it cannot match the <0.1 V conduction drop of actively controlled MOSFETs. Use only where gate drive complexity or cost prohibits synchronous implementation.