STMicroelectronics STTH4R02S

Overview

STTH4R02S from STMicroelectronics is an ultrafast recovery silicon rectifier diode in SMC package, rated for 200 V repetitive peak reverse voltage, 4 A average forward current (at T_L = 95 °C), and 16 ns typical reverse recovery time (t_rr) at 125 °C. It features low conduction losses (V_F = 0.76 V typ at 150 °C, 4 A) and high junction temperature capability up to 175 °C, designed for freewheeling and polarity protection in low-voltage, high-frequency inverters.

For engineers reviewing the STTH4R02S datasheet, STTH4R02S pinout, STTH4R02S application, or STTH4R02S equivalent, key selection criteria include reverse recovery time under dI_F/dt stress, thermal resistance (R_th(j-l) = 20 °C/W), surge current rating (I_FSM = 70 A), and ECOPACK®2 compliance for lead-free assembly.

Technical Context

This diode employs ST's planar platinum-doped technology to achieve ultrafast switching with negligible switching losses and very low forward/reverse recovery times. Its dynamic performance is characterized by t_rr = 16–20 ns (typ/max) at dI_F/dt = −100 A/µs and V_R = 30 V, and I_RM = 4.4–5.5 A under harsh conditions (T_j = 125 °C, dI_F/dt = −200 A/µs).

Thermal design relies on junction-to-lead thermal resistance of 20 °C/W (SMC), enabling efficient conduction cooling via PCB copper pads. The device operates across −65 to +175 °C storage and junction temperature ranges, supporting robust operation in industrial power converters where thermal cycling and transient overload resilience are critical.

Key Specifications

Pinout & Package

STTH4R02S is packaged in SMC (DO-214AB), a surface-mount plastic case with two gull-wing leads and a cathode band marking. Thermal performance relies on soldering both leads to ≥4 mm² copper pads per lead.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast recovery diode applications.

Compared with STTH4R02U and MBR420F-E3/45, STTH4R02S offers superior thermal dissipation in SMC form factor, balanced t_rr/V_F trade-off for mid-power inverters, and higher surge robustness-making it optimal for industrial-grade 4 A freewheeling where reliability outweighs minimal size savings.

Availability

STTH4R02S is available at Aetrix Electronics and suitable for solar microinverters, industrial motor drive clamping, and UPS battery charging circuits requiring stable component supply and long-term manufacturing continuity.

Supply support for STTH4R02S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, power, MCU, and sensor solutions for industrial, automotive, and consumer markets.

The STTH ultrafast diode product line targets high-frequency power conversion applications demanding low switching loss, high temperature resilience, and robust surge immunity-especially in inverters, SMPS, and motor control systems.

FAQ

What is the maximum allowable PCB copper area for optimal thermal performance of STTH4R02S?

For optimal thermal performance, each SMC lead should be soldered to ≥4 mm² of 2 oz (70 µm) copper on the primary side, with thermal vias (≥4×0.3 mm diameter) connecting to inner or backside ground planes. This achieves near-datasheet R_th(j-l) = 20 °C/W and maintains T_j ≤150 °C at 4 A continuous.

Does STTH4R02S support reflow soldering per J-STD-020?

Yes, STTH4R02S is qualified for lead-free reflow per J-STD-020D, with peak temperature up to 260 °C for 30 seconds. Its ECOPACK®2-compliant molding compound and termination plating ensure reliability under standard Pb-free profiles without delamination or voiding.

How does reverse recovery behavior change at elevated junction temperature?

At T_j = 125 °C, t_rr increases to 20 ns (max) and I_RM rises to 5.5 A due to carrier lifetime extension. This is documented in Figure 11 of the datasheet and must be accounted for in EMI filter sizing and snubber design for high-temp operation.

Can STTH4R02S replace a standard 1N5822 in a 24 V DC-DC converter?

No-1N5822 is a 40 V Schottky diode (3 A), while STTH4R02S is a 200 V ultrafast silicon diode (4 A). Substitution would over-specify voltage rating but risk excessive V_F and switching loss at low voltage. Use only if V_RRM ≥100 V is required and thermal design accommodates higher conduction loss.