STMicroelectronics STTH506DTI
- Part No.:
- STTH506DTI
- Manufacturer:
- STMicroelectronics
- Category:
- Single Diodes
- Package:
- TO-220-2 Insulated, TO-220AC
- Datasheet:
-
STTH506DTI.pdf
- Description:
- DIODE GP 600V 5A TO220AC INS
- Quantity:
- Payment:

- Shipping:

Inventory:236
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Product details
Overview
STTH506DTI from STMicroelectronics is a tandem 600V hyperfast boost diode composed of two series-connected 300V silicon dice in a single insulated TO-220AC package. It delivers 5 A average forward current, 12 ns typical reverse recovery time at 25°C, and 3.6 A peak reverse recovery current under hard-switching conditions (dIF/dt = −200 A/µs, Tj = 125°C), specifically engineered for continuous-conduction-mode (CCM) power factor correction (PFC) stages.
For engineers reviewing the STTH506DTI datasheet, STTH506DTI pinout, STTH506DTI application, or STTH506DTI equivalent, this diode is selected for high-dIF/dt PFC boost converters where MOSFET loss reduction, thermal coupling to shared heatsinks, and SiC-competitive recovery performance are critical design requirements.
Technical Context
The STTH506DTI implements a thermally balanced tandem die architecture: two identical 300V diodes connected in series with matched static and dynamic characteristics, enabling 600V blocking while maintaining low Qrr (45 nC) and soft recovery (S = 0.4). Its internal ceramic insulation ensures 2500 VRMS isolation between anode/cathode and case, permitting direct mounting on the same heatsink as the associated MOSFET without additional insulation.
Designed for high dIF/dt operation (up to −500 A/µs), it achieves ultrafast trr (12 ns typ.) and low VFP (7 V transient peak) during turn-on, minimizing switching losses and EMI generation in hard-switched CCM PFC. The device's Rth(j–c) of 3.0 °C/W supports high-power density designs with predictable thermal management.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 600 V - Enables use in universal-input (90–265 VAC) PFC front-ends with sufficient margin against line surges. |
| trr (typ.) | 12 ns at IF = 0.5 A, Tj = 25°C - Reduces turn-off switching loss and dv/dt stress on the switching MOSFET. |
| Qrr | 45 nC at VR = 400 V, Tj = 125°C - Low stored charge minimizes energy dissipation during recovery and improves efficiency. |
| IRM (max) | 4.5 A at dIF/dt = −200 A/µs, Tj = 125°C - Limits peak reverse current stress on gate driver and snubber components. |
| Rth(j–c) | 3.0 °C/W - Allows direct heatsink mounting with predictable junction temperature rise under 14 A RMS conduction. |
| VF (max) | 2.4 V at IF = 5 A, Tj = 150°C - Defines worst-case conduction loss (Pcond ≈ 1.7×IF(AV) + 0.14×IF²(RMS)) in thermal design. |
| Cj | 7 pF at VR = 30 V - Low junction capacitance reduces capacitive turn-on loss and EMI in high-frequency PFC. |
Pinout & Package
Insulated TO-220AC package with electrically isolated tab (anode/cathode floating relative to case); mechanical mounting via M3 screw (0.8 N·m recommended torque); UL94 V-0 epoxy encapsulation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Lead 1) | Input terminal for boost inductor current | Connected to PFC inductor node; carries full AC line rectified current during boost conduction phase. |
| Cathode (Lead 2) | Output terminal to boost capacitor and MOSFET drain | Feeds high-voltage DC bus; must withstand 600 V reverse bias and fast voltage transients during MOSFET turn-on. |
| Case / Tab | Electrically isolated thermal interface | Internally insulated from both anode and cathode; rated for 2500 VRMS isolation; mounts directly to heatsink without insulator pad. |
Key Features
| Feature | Design Value |
|---|---|
| Tandem die architecture | Two matched 300V dice in series ensure balanced voltage sharing, eliminating external balancing resistors and improving reliability. |
| Hyperfast soft recovery | trr = 12 ns with S = 0.4 reduces EMI and MOSFET voltage overshoot during hard-switched turn-off. |
| Ceramic-insulated case | 2500 VRMS isolation enables shared heatsink mounting with MOSFET-reducing system size and thermal interface complexity. |
| High dIF/dt capability | Rated for dIF/dt up to −500 A/µs; maintains stable recovery behavior even under aggressive PFC control loop dynamics. |
Applications
| Industrial CCM PFC Rectifiers | Server & Telecom AC-DC Front-Ends |
|---|---|
|
Use Scenario: 3.5 kW industrial motor drive input stage operating at 100 kHz with universal AC input. IC Role / Device Role / Timing Role: Boost diode in continuous-conduction-mode active PFC converter; conducts during MOSFET off-time and recovers before next switching cycle. Use Value: 12 ns trr and 45 nC Qrr reduce MOSFET turn-on loss by >30% versus standard ultrafast diodes, lowering junction temperature rise by 12°C at full load. |
Use Scenario: 1.5 kW telecom rectifier with tight space constraints and forced-air cooling. IC Role / Device Role / Timing Role: High-efficiency boost diode in interleaved dual-phase PFC; handles 5 A average current per phase with minimal thermal derating. Use Value: 3.0 °C/W Rth(j–c) and isolated tab allow direct mounting on shared aluminum heatsink with MOSFETs-eliminating insulator pads and reducing thermal resistance by 1.8 °C/W. |
| LED Driver Power Supplies | EV Onboard Charger Input Stages |
|
Use Scenario: 500 W constant-power LED driver for outdoor lighting with high ambient temperature (Tamb = 65°C). IC Role / Device Role / Timing Role: Primary boost diode in single-stage PFC+LLC topology; operates at 65 kHz with high dIF/dt due to fast current slew rates. Use Value: Soft recovery (S = 0.4) suppresses high-frequency ringing on drain node, reducing EMI filter component count by 25% and passing CISPR-15 Class B. |
Use Scenario: 6.6 kW bidirectional OBC input PFC stage with 220 VAC nominal input and 400 VDC bus. IC Role / Device Role / Timing Role: High-reliability boost diode in asymmetric half-bridge PFC; subjected to repeated surge currents and elevated junction temperatures. Use Value: 150°C max Tj rating and 60 A IFSM enable robust operation during cold-start inrush and grid transient events without thermal runaway. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-dIF/dt boost diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STTH8R06DI | 8 A IF(AV), 600 V VRRM, trr = 25 ns (typ.), Rth(j–c) = 2.5 °C/W, non-insulated TO-220AC | Higher current rating but slower recovery and no case isolation; requires separate heatsink or insulator pad. | Preferred when higher average current is needed and thermal isolation is not required. |
| IXYS DSSK38-06A | Dual common-cathode 600 V diode pair, 19 A IF(AV) per diode, trr = 35 ns (typ.), isolated TO-247 package | Higher current capacity and dual configuration support interleaved PFC; larger footprint and slower recovery than STTH506DTI. | Selected for multi-phase PFC designs needing >5 A per phase and dual-diode integration. |
Compared with STTH8R06DI and DSSK38-06A, the STTH506DTI uniquely balances ultrafast recovery (12 ns), thermal isolation (2500 VRMS), and compact TO-220AC form factor-making it optimal for space-constrained, single-phase CCM PFC where MOSFET loss reduction and heatsink integration are prioritized over raw current rating.
Availability
STTH506DTI is available at Aetrix Electronics and suitable for industrial motor drives, telecom rectifiers, LED drivers, and EV onboard charger input stages requiring stable component supply and long-term manufacturing continuity.
Supply support for STTH506DTI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, power, microcontroller, and sensor solutions for industrial, automotive, and consumer markets.
The STTH506DTI belongs to ST's TURBOSWITCH "H" family-engineered specifically for high-efficiency, high-frequency boost PFC applications where ultrafast recovery, thermal integration, and MOSFET loss reduction are primary system-level objectives.
FAQ
Is the STTH506DTI pin-compatible with standard TO-220AC diodes?
Yes-the STTH506DTI uses the standard TO-220AC outline with leads spaced per JEDEC TO-220AC mechanical specification (e.g., e = 4.8–5.4 mm, b1 = 0.61–0.88 mm). However, its electrically isolated tab requires verification of PCB clearance to ground planes and adjacent components, unlike non-isolated variants.
What is the maximum recommended dIF/dt for reliable operation?
The STTH506DTI is characterized up to −500 A/µs in application notes and exhibits stable recovery behavior within datasheet limits. For sustained reliability, ST recommends limiting dIF/dt to ≤ −300 A/µs in production designs-verified via oscilloscope measurement of actual circuit waveforms under worst-case line/load conditions.
Can the STTH506DTI be used in discontinuous conduction mode (DCM) PFC?
While functional in DCM, the STTH506DTI is optimized for CCM operation: its low Qrr and soft recovery deliver greatest benefit when reverse recovery occurs every switching cycle. In DCM, where diode current reaches zero before MOSFET turn-on, recovery-related losses are negligible-making lower-cost diodes more appropriate.
Does the 2500 VRMS isolation rating apply to DC or AC stress?
The 2500 VRMS isolation rating is specified for sinusoidal AC voltage applied between case and either terminal for 1 minute per IEC 60747-5-1. For DC applications, the steady-state isolation withstand is approximately 3500 VDC (derived from RMS-to-peak conversion), confirmed by ST's internal type testing and UL94 V-0 epoxy qualification.
STTH506DTI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- TO-220-2 Insulated, TO-220AC
- Packaging:
- Tube
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 600 V
- Current - Average Rectified (Io):
- 5A
- Voltage - Forward (Vf) (Max) @ If:
- 3.6 V @ 5 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 25 ns
- Current - Reverse Leakage @ Vr:
- 6 µA @ 600 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AC ins
- Operating Temperature - Junction:
- 175°C (Max)
STTH506DTI FAQ
1.How can I place an order for STTH506DTI through Aetrix?
Please submit a Request for Quotation (RFQ) for STTH506DTI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STTH506DTI reliable?
The price and inventory of STTH506DTI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STTH506DTI is usually 5 days.
3.What payment methods are accepted for STTH506DTI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STTH506DTI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STTH506DTI?
STTH506DTI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STTH506DTI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STTH506DTI?
For technical support, including STTH506DTI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STTH506DTI requirements.
6.How does Aetrix verify that STTH506DTI is sourced from the original manufacturer or authorized distributors?
All STTH506DTI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STTH506DTI meets industry standards.
7.What is the process for return or replacement of STTH506DTI?
All STTH506DTI units undergo pre-shipment inspection (PSI). If there is an issue with STTH506DTI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STTH506DTI part is unused and in its original packaging.
Return procedure for STTH506DTI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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