STMicroelectronics STTH602CFP

Overview

STTH602CFP from STMicroelectronics is a dual-center-tap ultrafast recovery diode in insulated TO-220FPAB package, rated for 200 V repetitive peak reverse voltage, 3 A average forward current per diode, and 14 ns typical reverse recovery time at 25 °C. It delivers low conduction loss (VF typ 0.80 V at 3 A, 150 °C) and high surge capability (60 A, 10 ms), targeting high-frequency DC–DC converters and SMPS freewheeling paths.

For engineers reviewing the STTH602CFP datasheet, STTH602CFP pinout, STTH602CFP application, or STTH602CFP equivalent, key selection criteria include thermal resistance (Rth(j-c) = 7.5 °C/W per diode), insulated case construction, dual-diode symmetry, and validated performance under dIF/dt up to 500 A/µs at 125 °C junction temperature.

Technical Context

This dual-center-tap diode integrates two independent ultrafast switching elements sharing a common cathode terminal, enabling synchronous rectification or complementary freewheeling in half-bridge and push-pull topologies. Its TO-220FPAB package provides electrical isolation between mounting surface and internal die, eliminating need for insulating washers in heatsinked designs.

Dynamic behavior is characterized by low QRR (typical 35 nC at IF = 3 A, VR = 160 V, Tj = 125 °C) and minimal IRM (4–5.5 A), supporting high-efficiency operation in 100–500 kHz power stages. Thermal coupling between diodes is quantified at Rth(c) = 3 °C/W, critical for accurate junction temperature estimation under simultaneous conduction.

Key Specifications

Pinout & Package

STTH602CFP uses an insulated TO-220FPAB package with three terminals: two anodes (A1, A2) and one common cathode (K). The plastic body provides 2500 V RMS isolation between case and die, enabling direct mounting to grounded heatsinks without insulation hardware.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast dual-diode applications.

Compared with STTH602CT and MUR620E, STTH602CFP uniquely combines electrical isolation, dual-diode integration, and sub-20 ns trr-enabling compact, low-noise, and thermally robust designs where mechanical isolation and layout density are critical.

Availability

STTH602CFP is available at Aetrix Electronics and suitable for server PSUs, industrial DC–DC converters, solar microinverters, and medical imaging power supplies requiring stable component supply and long-term lifecycle support.

Supply support for STTH602CFP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing silicon solutions for automotive, industrial, and power applications since 1987.

The STTH series targets high-efficiency switched-mode power conversion, with STTH602CFP specifically engineered for insulated, high-frequency, dual-diode rectification in space-constrained and thermally demanding systems.

FAQ

What is the mounting torque specification for STTH602CFP?

The recommended torque value for the mounting screw is 0.8 Nm, with a maximum allowable torque of 1.0 Nm. Exceeding this limit risks cracking the epoxy body or compromising internal wire bonds. Torque must be applied using a calibrated tool with controlled rate to avoid stress-induced delamination of the die attach.

Can STTH602CFP replace STTH602CT in existing designs?

Yes, but only if the design does not rely on the lower thermal resistance of TO-220AB. STTH602CFP has Rth(j-c) = 7.5 °C/W per diode versus 5.0 °C/W for STTH602CT, requiring ~50% higher heatsink area for equivalent thermal performance. Electrical pinout and marking are identical.

Is STTH602CFP suitable for use in automotive under-hood applications?

No-STTH602CFP is not qualified to AEC-Q101. While its 175 °C max junction temperature meets under-hood ambient requirements, it lacks automotive-specific qualification testing (e.g., HTOL, temperature cycling, ESD), and ST's official documentation restricts use to industrial and commercial power supplies.

How is reverse recovery charge (QRR) affected by junction temperature?

QRR increases by ~1.8× from 25 °C to 125 °C at fixed IF = 3 A and VR = 160 V, per Figure 7. This rise directly impacts turn-off loss and EMI generation, necessitating derating of switching frequency or addition of snubbers in high-temperature operation above 100 °C.