STMicroelectronics STTH6112TV1

Overview

STTH6112TV1 from STMicroelectronics is an ultrafast recovery silicon rectifier diode in ISOTOP package, rated for 1200 V repetitive peak reverse voltage, 30 A average forward current per diode (Tc = 70 °C), and 45 ns typical reverse recovery time at 200 A/µs dIF/dt. It delivers soft recovery, low conduction losses (VF = 1.30 V typ. @ 30 A, Tj = 150 °C), and high junction temperature capability (Tj(max) = 150 °C), making it suitable for high-frequency industrial rectification and freewheeling in motor drives.

For engineers reviewing the STTH6112TV1 datasheet, STTH6112TV1 pinout, STTH6112TV1 application, or STTH6112TV1 equivalent, key selection criteria include its insulated ISOTOP package (2500 VRMS isolation, <45 pF capacitance), dual-diode configuration, thermal resistance (Rth(j–c) = 1.16 °C/W per diode), and validated performance under high dIF/dt (up to 500 A/µs) and elevated junction temperature (125–150 °C).

Technical Context

This dual-diode ultrafast rectifier is designed for high-efficiency, high-reliability power conversion where fast switching, low reverse recovery charge (Qrr), and soft recovery reduce EMI and snubber stress. Its ISOTOP package enables direct heatsink mounting with electrical isolation, supporting parallel operation without additional insulation barriers.

The device exhibits strong thermal coupling between diodes: junction-to-case resistance is 1.16 °C/W per diode, while coupling thermal resistance (Rth(c)) is 0.1 °C/W - critical for accurate thermal derating when both diodes conduct simultaneously. Dynamic behavior is characterized across wide dIF/dt (50–500 A/µs) and temperature (25–150 °C) ranges, with softness factor ≥1.5 at 125 °C.

Key Specifications

Pinout & Package

STTH6112TV1 uses the ISOTOP package - a molded, insulated, dual-diode power package with four terminals (K1, A1, K2, A2) and integral thermal pad. Dimensions: 38.0 × 25.3 × 12.0 mm (L × W × H), weight 27 g, UL94 V0 epoxy.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast high-voltage diode applications.

Compared with MUR1560E and VS-25CPH12, STTH6112TV1 uniquely combines dual-diode integration, 30 A per diode rating, sub-50 ns trr at 125 °C, and certified 2500 VRMS isolation in one compact ISOTOP package - enabling higher power density and simplified thermal/mechanical design in industrial motor controls.

Availability

STTH6112TV1 is available at Aetrix Electronics and suitable for industrial motor drives, three-phase PFC converters, and high-reliability DC link freewheeling applications requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for STTH6112TV1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, microcontrollers, and automotive ICs with manufacturing in Europe and Asia.

STTH6112TV1 belongs to ST's high-voltage ultrafast diode product line, engineered specifically for rugged industrial power conversion where reliability under thermal stress, EMI control, and system-level insulation integrity are critical.

FAQ

What is the maximum allowable case temperature for continuous operation?

The datasheet specifies IF(AV) = 30 A at Tc = 70 °C. With Rth(j–c) = 1.16 °C/W and Tj(max) = 150 °C, the absolute maximum case temperature is 115 °C (150 − 30 × 1.16). Operation above 70 °C requires linear derating per Figure 1, and thermal interface resistance must be minimized to maintain safe junction temperature.

Can STTH6112TV1 be used in parallel configurations?

Yes - the ISOTOP package supports parallel operation of both diodes with shared heatsink mounting. Thermal coupling (Rth(c) = 0.1 °C/W) means simultaneous conduction increases total junction temperature; derating curves in the datasheet (page 2) must be applied using ∆Tj = P₁×1.16 + P₂×0.1 + P₂×1.16 to avoid exceeding 150 °C.

Does the 2500 VRMS isolation apply between all terminals?

No - the 2500 VRMS rating applies between each anode/cathode pair (A1–K1, A2–K2) and the metal thermal pad (heatsink interface). Inter-terminal isolation (e.g., A1–A2 or K1–K2) is not specified; layout must maintain creepage/clearance per IEC 61800-5-1 for functional insulation requirements.

How does soft recovery impact EMI in high-frequency inverters?

Soft recovery (S factor ≥1.5) limits di/dt during turn-off, reducing high-frequency spectral content in voltage transients. Measured data (Figure 4–5) shows IRM peaks remain below 35 A even at 500 A/µs dIF/dt, lowering conducted EMI amplitude by 10–15 dB compared to hard-recovery diodes - easing compliance with EN 55011 Class A limits.