STMicroelectronics STTH802CB

Overview

STTH802CB from STMicroelectronics is a high-efficiency ultrafast dual center-tap rectifier diode in DPAK package, rated for 200 V repetitive peak reverse voltage, 4 A average forward current per diode (8 A per device), 13 ns typical reverse recovery time, and 175 °C maximum junction temperature - deployed in low-voltage, high-frequency DC-DC converters and SMPS freewheeling paths.

For engineers reviewing the STTH802CB datasheet, STTH802CB pinout, STTH802CB application, or STTH802CB equivalent, key selection criteria include reverse recovery performance at 125 °C, thermal resistance (4 °C/W per diode junction-to-case), surge capability (50 A non-repetitive), and ECOPACK®2-compliant DPAK packaging for industrial power conversion designs.

Technical Context

This dual-center-tap configuration integrates two independent ultrafast switching diodes sharing a common cathode terminal, enabling synchronous rectification or complementary freewheeling in half-bridge and full-bridge topologies. Its 13 ns trr (typ.) and 0.81 V VF (typ. at 125 °C, 4 A) support high-frequency operation up to several hundred kHz without excessive switching losses.

The DPAK package provides low thermal resistance (Rth(j-c) = 4 °C/W per diode, 2.5 °C/W total) and direct conduction cooling via the exposed thermal pad. Device derating follows Tj(max) = 175 °C with IF(AV) limited to 4 A per diode at Tc = 155 °C, reflecting its optimized thermal design for compact power stages.

Key Specifications

Pinout & Package

DPAK (TO-252) package with exposed thermal pad on underside; three terminals: Cathode (common), Anode 1, Anode 2. Designed for surface-mount reflow assembly and direct thermal conduction to PCB copper pour.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast dual-center-tap rectifier applications.

Compared with STTH802D and MUR820E, STTH802CB delivers superior thermal performance (2.5 °C/W total Rth), integrated dual-diode topology in surface-mount form, and best-in-class 13 ns trr - making it optimal for space-constrained, high-frequency, high-reliability SMPS where thermal density and switching loss are critical.

Availability

STTH802CB is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, solar microinverters, and automotive DC-DC converters requiring stable component supply, long-lifecycle availability, and traceable sourcing.

Supply support for STTH802CB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, power, MCU, and sensor solutions for industrial, automotive, and consumer markets.

STTH802CB belongs to ST's high-voltage ultrafast diode product line, engineered specifically for high-efficiency, high-frequency switched-mode power conversion in space- and thermal-constrained applications.

FAQ

What is the thermal pad connection requirement for STTH802CB in DPAK?

The exposed thermal pad on the underside of the DPAK package must be soldered to a minimum 25 mm² copper area on the PCB, with ≥4 thermal vias (0.3 mm diameter) connecting to internal ground or power planes. This ensures the specified 4 °C/W junction-to-case thermal resistance per diode is achieved in production assembly.

Can STTH802CB replace a single ultrafast diode in a conventional rectifier?

No - STTH802CB contains two independent diodes with a shared cathode; using only one anode leaves the second diode electrically floating and thermally unbalanced. It must be used in dual-path topologies like center-tap rectifiers, interleaved freewheeling, or dual-phase synchronous rectification.

How does STTH802CB perform at 150 °C junction temperature?

At Tj = 150 °C, VF increases to 0.88 V (max) at 4 A, and trr extends to ~18 ns (typ.). Derated IF(AV) drops to 3.2 A per diode at Tc = 150 °C. The device remains fully functional within specifications, but conduction and switching losses rise measurably - thermal design must maintain Tj ≤ 150 °C for optimal efficiency.

Is STTH802CB qualified for automotive applications?

STTH802CB is not AEC-Q101 qualified. While its 175 °C Tj(max) and ECOPACK®2 compliance meet some automotive environmental requirements, it lacks the stress test documentation, lot traceability, and zero-defect screening required for automotive safety-critical systems. Use STTH802CB only in non-safety automotive subsystems (e.g., infotainment power rails) with customer validation.