STMicroelectronics STTH802CFP

Overview

STTH802CFP from STMicroelectronics is a dual-center-tap ultrafast recovery silicon rectifier diode in DPAK (TO-252) package, rated for 200 V repetitive peak reverse voltage, 4 A average forward current per diode (8 A per device), and 13 ns typical reverse recovery time. It delivers low conduction loss (VF = 0.81 V typ. at 125 °C, 4 A) and high surge capability (50 A, 10 ms), optimized for SMPS secondary-side rectification and freewheeling in DC–DC converters.

For engineers reviewing the STTH802CFP datasheet, STTH802CFP pinout, STTH802CFP application, or STTH802CFP equivalent, key selection criteria include reverse recovery time under high dIF/dt, thermal resistance (Rth(j-c) = 4 °C/W per diode), junction temperature derating up to 175 °C, and dual-diode center-tap configuration for synchronous or complementary switching topologies.

Technical Context

This dual-diode rectifier integrates two independent ultrafast epitaxial planar junctions in a single DPAK thermally enhanced package, sharing a common cathode connection. Its design targets high-frequency switching (>100 kHz) with minimal reverse recovery charge (Qrr) and low forward voltage drift over temperature - VF increases only ~0.14 V from 25 °C to 125 °C at 4 A.

The device operates with junction-to-case thermal resistance of 4 °C/W per diode (2.5 °C/W total for both diodes), enabling efficient conduction cooling via PCB copper area. Dynamic performance is characterized at IF = 0.5 A, IRR = 0.25 A, VR = 1 V, yielding trr = 13 ns (typ.) and tfr = 50 ns (max.), supporting fast transient response in resonant and phase-shifted full-bridge topologies.

Key Specifications

Pinout & Package

Package: DPAK (TO-252), surface-mount, thermally enhanced with exposed metal tab for PCB heat transfer. Dimensions per ST DocID8723 Rev 3: D = 6.09 mm, E = 6.54 mm, L = 1.39 mm, thermal pad area ≈ 30 mm².

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast dual-diode rectifier applications.

Compared with STTH802D (identical spec, alternate marking) and VS-8EWH02FN-M3 (TO-220, higher VF/trr), STTH802CFP delivers optimal thermal resistance (4 °C/W) and smallest footprint for high-density SMPS, while maintaining lowest conduction and switching loss among DPAK-packaged dual ultrafast rectifiers.

Availability

STTH802CFP is available at Aetrix Electronics and suitable for server power supplies, industrial DC–DC converters, telecom rectifier modules, and automotive on-board charger auxiliary supplies requiring stable component supply, long-lifecycle support, and ECOPACK®2-compliant sourcing.

Supply support for STTH802CFP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

The STTH ultrafast diode product line targets high-efficiency AC–DC and DC–DC conversion, emphasizing low trr, low VF, and rugged thermal performance for next-generation power supplies operating above 200 kHz.

FAQ

What is the thermal pad soldering requirement for STTH802CFP?

The DPAK package features an exposed thermal pad (Pin 2 cathode tab) that must be soldered to ≥30 mm² of 2-oz copper with ≥4 thermal vias (0.3 mm diameter) to ground plane. ST recommends stencil aperture 80% of pad area and SAC305 paste to achieve <0.5 °C/W interfacial resistance. Insufficient thermal pad soldering causes junction temperature to exceed 175 °C at 4 A continuous.

Does STTH802CFP support synchronous rectification control?

No - STTH802CFP is a passive silicon diode with fixed unidirectional conduction; it lacks gate terminals or control logic. Synchronous rectification requires actively switched MOSFETs (e.g., STripFET™ devices). However, its 13 ns trr minimizes body diode conduction loss when used alongside synchronous FETs in quasi-resonant topologies.

How does STTH802CFP perform at 150 °C ambient temperature?

At 150 °C ambient with 25 mm² 2-oz copper pad, junction temperature reaches 162 °C at 4 A per diode (derated from 175 °C limit). Conduction loss rises to 0.95 V (per diode), increasing power dissipation by 18% versus 25 °C. Derating to 3.2 A per diode maintains Tj ≤ 150 °C for extended reliability.

Is STTH802CFP pin-compatible with STTH8R02DJ?

No - STTH8R02DJ is a TO-220AC single-diode 200 V/8 A ultrafast rectifier with 3 pins (anode, cathode, case) and no center-tap configuration. STTH802CFP has 3 pins (A1, K, A2) in DPAK and shares a common cathode. Physical layout, thermal path, and circuit topology differ fundamentally; PCB redesign is required for substitution.