STMicroelectronics STTH802FP

Overview

STTH802FP from STMicroelectronics is an ultrafast recovery silicon diode in insulated TO-220FPAC package, rated for 200 V repetitive peak reverse voltage, 8 A average forward current, and 17 ns typical reverse recovery time at 125 °C. It delivers low conduction losses (VF = 0.80–0.90 V at 150 °C, IF = 8 A) and high junction temperature capability (Tj(max) = 175 °C), making it suitable for freewheeling paths in high-frequency DC-DC converters and polarity protection in industrial power supplies.

For engineers reviewing the STTH802FP datasheet, STTH802FP pinout, STTH802FP application, or STTH802FP equivalent, key selection criteria include reverse recovery time under dIF/dt stress, thermal resistance (Rth(j-c) = 5.5 °C/W), insulating voltage rating (2000 VRMS), and ECOPACK®2 compliance for environmentally constrained designs.

Technical Context

This diode employs ST's planar platinum-doped technology to achieve precise control of minority carrier lifetime, enabling ultrafast switching with minimal tail current. Its low trr (17–30 ns) and low IRM (5.5–7.0 A) under high dIF/dt (−200 A/µs) support efficient operation in hard-switched topologies.

The TO-220FPAC package integrates electrical isolation via molded insulation between the metal tab and leads, supporting direct heatsink mounting without additional insulators while maintaining 2000 VRMS dielectric strength. Thermal performance is optimized for case-conducted cooling at TC = 125 °C.

Key Specifications

Pinout & Package

STTH802FP uses the insulated TO-220FPAC package: a 3-terminal, through-hole, thermally enhanced variant of TO-220 with electrically isolated metal tab (2000 VRMS). The package supports mechanical mounting torque of 0.55 N·m (recommended) and 0.7 N·m (maximum).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast recovery diode applications.

Compared with STTH8R06D and MUR820E, STTH802FP uniquely combines 200 V rating, sub-20 ns trr at elevated temperature, and integrated 2000 VRMS isolation-enabling simpler, more compact, and thermally superior layouts in space-constrained industrial power stages.

Availability

STTH802FP is available at Aetrix Electronics and suitable for industrial motor drives, solar microinverters, and telecom power supplies requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for STTH802FP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, power, MCU, and sensor solutions for industrial, automotive, and consumer markets.

STTH802FP belongs to ST's ultrafast recovery diode product line, engineered specifically for high-efficiency, high-frequency power conversion where low trr, low VF, and thermal robustness are mandatory.

FAQ

What is the maximum allowable case temperature for continuous operation of STTH802FP?

The STTH802FP is rated for IF(AV) = 8 A at TC = 125 °C, with absolute maximum junction temperature Tj(max) = 175 °C. Using Rth(j-c) = 5.5 °C/W, sustained operation at full current requires TC ≤ 125 °C to maintain Tj ≤ 175 °C. Exceeding TC = 125 °C necessitates proportional current derating per the datasheet curve.

Does STTH802FP require a thermal pad or insulator when mounted to a heatsink?

No. The TO-220FPAC package features an electrically insulated metal tab rated for 2000 VRMS, allowing direct mounting to grounded or floating heatsinks without thermal pads, mica washers, or sil-pads. Mechanical torque must be limited to 0.55 N·m (recommended) to avoid cracking the insulation layer.

How does STTH802FP's reverse recovery behavior change with increasing dIF/dt?

As dIF/dt increases from −50 to −200 A/µs, trr decreases from 25 ns to 17 ns (typical at 25 °C), while IRM rises from ~4 A to 7.0 A (max at 125 °C). This inverse relationship reflects faster carrier sweep-out, but higher peak reverse current demands careful layout to minimize parasitic inductance and associated voltage overshoot.

Can STTH802FP replace standard fast recovery diodes like BYV26E in existing PCB layouts?

Yes, STTH802FP shares identical TO-220FPAC footprint and lead spacing with BYV26E, enabling drop-in replacement. However, its lower VF (0.80 V vs. 1.15 V) and faster trr (17 ns vs. 50 ns) reduce both conduction and switching losses-potentially requiring minor snubber tuning to accommodate reduced Qrr and faster turn-off dynamics.