STMicroelectronics STTH802G

Overview

STTH802G from STMicroelectronics is an ultrafast recovery silicon diode optimized for high-frequency switching applications including freewheeling, polarity protection, and base drive circuits in low-voltage inverters. It features a 200 V repetitive peak reverse voltage (V_RRM), 8 A average forward current (I_F(AV)), 175 °C maximum junction temperature, 17 ns typical reverse recovery time (t_rr), and 0.8 V typical forward voltage drop at 25 °C - packaged in insulated D²PAK.

For engineers reviewing the STTH802G datasheet, STTH802G pinout, STTH802G application, or STTH802G equivalent, key selection considerations include its ultrafast t_rr performance under high dI/dt conditions, thermal robustness up to 175 °C, and suitability for space-constrained power stages requiring low conduction and negligible switching losses.

Technical Context

This planar Pt-doped 200 V diode delivers ultrafast recovery with t_rr as low as 17 ns at I_F = 1 A, dI/dt = −100 A/µs, and V_R = 30 V. Its low Q_rr and minimal IRM (5.5–7.0 A at T_j = 125 °C) reduce switching loss and EMI in hard-switched topologies.

The device operates reliably across −65 °C to +175 °C junction temperature range and supports high surge capability (I_FSM = 100 A, 10 ms sine). Its TO-220FPAC and D²PAK variants feature insulated packages rated for 2000 V_RMS isolation, enabling direct mounting on heatsinks without additional insulation.

Key Specifications

Pinout & Package

STTH802G is housed in an insulated D²PAK (TO-263) package with three terminals: Anode, Cathode, and isolated metal tab (electrically connected to cathode). The package provides 2000 V_RMS insulation between tab and leads, eliminating need for insulating washers in heatsink mounting.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast recovery diode applications.

Compared with STTH8R06D and MBR20200CT, STTH802G uniquely balances 200 V rating, 17 ns t_rr, 175 °C operation, and insulated D²PAK packaging - making it optimal for thermally constrained, high-frequency industrial power stages where reliability and isolation are mandatory.

Availability

STTH802G is available at Aetrix Electronics and suitable for industrial motor drives, solar microinverters, and uninterruptible power supplies requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for STTH802G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, power, MCU, and sensor solutions for industrial, automotive, and consumer markets.

STTH802G belongs to ST's ultrafast recovery diode product line, engineered specifically for high-efficiency, high-frequency power conversion in industrial and renewable energy systems where low t_rr, high T_j, and package insulation are critical.

FAQ

What is the maximum allowable case temperature for STTH802G in D²PAK package?

The STTH802G D²PAK is rated for I_F(AV) = 8 A at T_C = 145 °C per datasheet Table 2. Exceeding this temperature reduces safe operating current; derating curves in Figure 1 confirm 5 A maximum at T_C = 160 °C. Thermal design must maintain case temperature ≤145 °C under full load.

Does STTH802G require a heatsink in typical 8 A applications?

Yes - with R_th(j-c) = 3.2 °C/W and P_cond ≈ 6.4 W (at V_F = 0.8 V), junction temperature rise is ~20.5 °C above case. To stay within 175 °C T_j, case temperature must remain ≤154.5 °C, necessitating a heatsink with R_th(c-a) ≤ 25 °C/W at ambient ≤50 °C.

Is the metal tab of STTH802G electrically isolated from the leads?

Yes - the D²PAK package of STTH802G is an insulated variant (TO-220FPAC/D²PAK grade) with 2000 V_RMS isolation between the cathode-connected tab and all leads. This is confirmed in the "Insulated package: TO-220FPAC" feature and Table 10 ordering code STTH802G.

How does STTH802G's reverse recovery behavior change at elevated junction temperature?

At T_j = 125 °C, t_rr increases to 22 ns (max) and IRM rises to 7.0 A (max) per Table 5. Q_rr also increases - Figure 7 shows ~2× higher charge at 125 °C vs. 25 °C. Designers must account for this in EMI filtering and snubber sizing for high-temperature operation.