STMicroelectronics STTH802SF

Overview

STTH802SF from STMicroelectronics is an ultrafast recovery silicon diode in PSMC (TO-277A) package, optimized for high-frequency switching circuits including transistor base drive and snubber networks. It delivers 8 A average forward current, 200 V repetitive peak reverse voltage, 17 ns typical reverse recovery time at 125 °C, 0.79 V typical forward voltage at 125 °C/8 A, and operates up to 175 °C junction temperature - enabling use in compact DC/DC converters and high-frequency inverters.

For engineers reviewing the STTH802SF datasheet, STTH802SF pinout, STTH802SF application, or STTH802SF equivalent, key selection criteria include ultrafast trr performance under high dIF/dt, low conduction loss at elevated temperature, wettable flanks for automated optical inspection, and thermal robustness in surface-mount power stages.

Technical Context

This device employs a planar epitaxial structure with optimized lifetime control to achieve soft, ultrafast reverse recovery (trr = 17 ns typ. at IF = 1.0 A, dIF/dt = −100 A/µs, VR = 30 V, Tj = 25 °C; 35 ns typ. at same conditions but Tj = 125 °C). Its low VF (0.79 V typ. @ 8 A, 125 °C) and negligible switching losses stem from minimized minority carrier storage and controlled recombination.

The PSMC (TO-277A) package features a single anode-cathode configuration with exposed copper thermal pad, 2.4 °C/W junction-to-case thermal resistance, and wettable flanks compliant with IPC-J-STD-020 reflow standards - supporting high-power density layouts where conduction and thermal management are co-constrained.

Key Specifications

Pinout & Package

PSMC (TO-277A) is a flat, surface-mount, single-diode package with two terminals: anode and cathode. It features an exposed thermal pad (cathode-connected), wettable flanks for AOI, and 1.1 mm typical height - optimized for low-profile power modules and dense converter layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast diode applications.

Compared with STTH802SF, STTH8R02DJ trades compactness for current headroom and thermal margin, while MBR8200CT sacrifices high-temperature capability and high-frequency fidelity for zero-recovery simplicity - making STTH802SF optimal for thermally aggressive, high-frequency switching where both speed and ruggedness are mandatory.

Availability

STTH802SF is available at Aetrix Electronics and suitable for DC/DC converters, high-frequency inverters, and snubber circuits requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for STTH802SF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, power, MCU, and sensor solutions for industrial, automotive, and consumer markets.

The STTH series targets high-efficiency power conversion, delivering ultrafast recovery diodes engineered specifically for high-frequency switching topologies where low loss, thermal resilience, and reliability are non-negotiable.

FAQ

What is the maximum allowable case temperature for continuous operation?

The STTH802SF is rated for Tc = 145 °C at IF(AV) = 8 A per datasheet absolute ratings. Exceeding this requires derating per Figure 1; at Tc = 125 °C, IF(AV) remains ≥8 A, but at Tc = 160 °C, it drops to ~6.2 A. Thermal design must maintain case temperature ≤145 °C under worst-case ambient and airflow conditions.

Does the STTH802SF have a built-in cathode thermal pad connection?

Yes - the PSMC (TO-277A) package integrates a fully exposed copper thermal pad electrically connected to the cathode terminal. This pad must be soldered to a minimum 6 cm² PCB copper area to achieve the specified Rth(j-c) = 2.4 °C/W and prevent junction overheating during sustained 8 A conduction.

How does trr vary with junction temperature and dIF/dt?

trr increases with rising Tj and decreasing dIF/dt: at Tj = 125 °C and dIF/dt = −200 A/µs, trr = 22 ns (max); at same Tj but dIF/dt = −50 A/µs, trr rises to 60 ns (max). Designers must reference Figure 6 and Table 4 to size snubber components for worst-case recovery behavior in their specific circuit dIF/dt profile.

Is the STTH802SF suitable for synchronous rectification?

No - STTH802SF is a unidirectional ultrafast recovery diode, not a synchronous rectifier IC or MOSFET-based solution. It functions as a passive freewheeling or snubber element. For synchronous rectification, discrete MOSFETs or dedicated SR controllers (e.g., STSR3) paired with low-RDS(on) FETs are required.