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STMicroelectronics STTH810FP

Part No.:
STTH810FP
Manufacturer:
STMicroelectronics
Category:
Single Diodes
Package:
TO-220-2 Full Pack, Isolated Tab
Datasheet:
AetrixSTTH810FP.pdf
Description:
DIODE GEN PURP 1KV 8A TO220FPAC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,739

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Product details

Overview

STTH810FP from STMicroelectronics is an ultrafast recovery, high-voltage silicon rectifier diode in TO-220FPAC insulated package, rated for 1000 V repetitive peak reverse voltage, 8 A average forward current (at Tc = 75 °C), and 47 ns typical reverse recovery time at 125 °C. It delivers low conduction loss (VF = 1.30 V typ. @ 8 A, 150 °C) and soft recovery behavior (S factor = 2), making it suitable for high-frequency snubber circuits and freewheeling in industrial switch-mode power supplies.

For engineers reviewing the STTH810FP datasheet, STTH810FP pinout, STTH810FP application, or STTH810FP equivalent, key selection criteria include its 2500 VRMS electrical insulation rating, 12 pF junction-to-case capacitance, 5.8 °C/W thermal resistance (junction-to-case), and validated performance under high dIF/dt (–200 A/µs) and elevated junction temperature (175 °C max).

Technical Context

This diode employs a planar epitaxial structure optimized for ultrafast soft recovery, minimizing voltage overshoot and EMI during turn-off. Its dynamic characteristics are specified under stringent conditions: trr = 47 ns (typ.) at IF = 8 A, dIF/dt = –200 A/µs, VR = 600 V, Tj = 125 °C - confirming suitability for hard-switched PFC and auxiliary winding demagnetization.

Thermal design is enabled by the TO-220FPAC's insulated tab (2500 VRMS isolation, 12 pF capacitance) and defined Rth(j-c) = 5.8 °C/W. The device maintains stable IR < 20 µA at 125 °C and VF ≤ 1.7 V up to 150 °C, supporting operation in thermally constrained industrial enclosures without derating penalties.

Key Specifications

Parameter Value and Actual Design Meaning
VRRM 1000 V - Withstands repetitive reverse voltages up to 1 kV in boost PFC or DC-link clamping without avalanche breakdown.
IF(AV) 8 A at Tc = 75 °C - Sustains continuous forward conduction in compact heatsinked designs with moderate thermal mass.
trr (typ) 47 ns at Tj = 125 °C - Enables switching frequencies >100 kHz in snubbers and flyback freewheel paths with minimal switching loss.
VF (typ) 1.30 V at IF = 8 A, Tj = 150 °C - Reduces conduction loss to ~10.4 W per device, easing thermal management in multi-diode arrays.
Rth(j-c) 5.8 °C/W - Requires ≥12 cm² copper area (FR4 PCB) for 40 °C rise at full load; compatible with standard TO-220 clip-on heatsinks.
IR (max) 20 µA at Tj = 125 °C - Ensures negligible leakage in high-impedance gate-drive bootstrap networks and precision voltage references.
S factor 2 - Delivers soft reverse recovery with controlled di/dt, suppressing ringing and reducing EMI filter component count.

Pinout & Package

STTH810FP uses the TO-220FPAC package: insulated plastic case with electrically isolated metal tab (2500 VRMS, 12 pF), 3-pin configuration, and standardized mounting hole (Ø3.0–3.2 mm). Tab serves as cathode terminal; lead #2 is anode; lead #1 is unused (mechanical support only).

Pin/Terminal Circuit Role Design Meaning
Tab (isolated metal surface) Cathode Electrically isolated output node; enables direct mounting to grounded heatsink without external insulator.
Lead #2 (center) Anode Main current entry point; designed for soldering to PCB trace or busbar with low-inductance layout.
Lead #1 (left, non-functional) Mechanical support No electrical connection; provides mechanical stability during insertion and thermal cycling.

Key Features

Feature Design Value
Ultrafast soft recovery trr = 47 ns (typ.) + S factor = 2 ensures low EMI and reduced stress on MOSFETs in synchronous rectification.
High-voltage insulation 2500 VRMS isolation between tab and leads allows safe use in floating secondary-side applications like LLC resonant converters.
High junction temperature rating Tj(max) = 175 °C supports operation in sealed industrial enclosures without forced air cooling.
Low leakage current IR ≤ 20 µA at 125 °C prevents bootstrap capacitor discharge in high-side gate drivers over extended duty cycles.
Optimized thermal path Rth(j-c) = 5.8 °C/W enables predictable junction temperature estimation using standard PCB copper area rules.

Applications

Industrial SMPS Output Rectification Snubber Network Diode

Use Scenario: High-efficiency 3 kW telecom rectifier with active clamp forward topology.

IC Role / Device Role / Timing Role: Freewheeling diode across transformer secondary, conducting during MOSFET off-time with precise timing alignment to minimize voltage spikes.

Use Value: 47 ns trr and soft recovery reduce clamp capacitor stress and eliminate need for RC snubber, cutting BOM cost by 3 components.

Use Scenario: RCD snubber across primary-side MOSFET in 1.5 kW AC-DC adapter.

IC Role / Device Role / Timing Role: Fast recovery diode that conducts only during MOSFET turn-off transient, capturing energy from leakage inductance.

Use Value: 12 pF junction capacitance and 2500 VRMS isolation prevent coupling noise into control circuitry while sustaining 600 V transient peaks.

Motor Drive Bootstrap Supply Demagnetization Diode in Flyback Converter

Use Scenario: Isolated gate driver supply for 3-phase IGBT inverter driving HVAC compressor.

IC Role / Device Role / Timing Role: Bootstrap charging diode that conducts only during low-side switch on-time to replenish gate drive capacitor.

Use Value: IR ≤ 20 µA at 125 °C ensures >99% charge retention over 10 µs switching cycle, enabling reliable high-side gate drive at 20 kHz.

Use Scenario: Auxiliary winding demagnetization path in 65 W laptop adapter flyback converter.

IC Role / Device Role / Timing Role: Secondary-side rectifier that conducts during transformer reset phase, transferring stored energy to output capacitor.

Use Value: VF = 1.30 V (typ.) at 150 °C reduces conduction loss by 18% vs. standard FR-type diodes, improving efficiency by 0.4% at full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast high-voltage diode applications.

Alternative Part Technical Difference Application Difference Selection Advice
STTH8R06D VRRM = 600 V, trr = 35 ns (typ.), TO-220AC (non-insulated), Rth(j-c) = 2.5 °C/W Lacks 2500 VRMS isolation; requires external insulator for heatsink mounting; better for cost-sensitive non-isolated designs. Choose when board space permits larger heatsink and isolation is handled externally; not drop-in for STTH810FP's insulated footprint.
IXYS MUR810E VRRM = 1000 V, trr = 50 ns (typ.), TO-220AC (non-insulated), Rth(j-c) = 2.0 °C/W, IR = 50 µA @ 125 °C Higher leakage current limits use in precision bootstrap circuits; no built-in insulation requires additional mounting hardware. Select for highest thermal performance where isolation is implemented at system level; verify IR impact on gate-drive hold-up time.

Compared with STTH810FP, STTH8R06D offers lower trr but sacrifices voltage rating and insulation, while IXYS MUR810E matches VRRM but lacks integrated isolation and exhibits higher leakage-making STTH810FP uniquely suited for compact, isolated, thermally constrained industrial power stages.

Availability

STTH810FP is available at Aetrix Electronics and suitable for industrial power supplies, motor control inverters, and high-reliability flyback converters requiring stable component supply, long-lifecycle assurance, and consistent parametric performance across manufacturing lots.

Supply support for STTH810FP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STTH810FP belongs to ST's ultrafast recovery diode product line, engineered specifically for high-efficiency, high-reliability industrial power conversion where soft switching, thermal robustness, and system-level isolation are critical design requirements.

FAQ

What is the maximum allowable junction temperature for STTH810FP, and how does it affect lifetime?

The absolute maximum junction temperature is 175 °C. Operating continuously at this limit reduces mean time to failure (MTTF) by ~50% versus 125 °C, per Arrhenius modeling. ST specifies derating curves showing IF(AV) drops to 5.5 A at Tc = 100 °C, confirming thermal design must maintain Tj ≤ 150 °C for >10-year field reliability in sealed enclosures.

Can STTH810FP be used as a direct replacement for STTH810D in existing TO-220AC layouts?

No - STTH810FP uses TO-220FPAC with insulated tab and different lead spacing (L3 = 28.6–30.6 mm vs. TO-220AC's L2 = 16.4 mm), requiring PCB footprint revision. Its 2500 VRMS isolation eliminates need for mica washers, but mechanical mounting holes and thermal pad geometry differ significantly.

How does the 12 pF junction-to-case capacitance impact EMI in high-frequency designs?

The 12 pF capacitance couples high dv/dt transients from the cathode tab to the heatsink, potentially injecting common-mode noise. In >100 kHz designs, this mandates use of ferrite beads on the heatsink ground strap or split-ground layout to avoid violating CISPR-32 Class B limits - unlike non-insulated packages where capacitance is typically >50 pF.

Is STTH810FP compliant with RoHS and REACH, and what is its halogen-free status?

Yes - STTH810FP is ECOPACK®-compliant, with lead-free second-level interconnect and halogen-free molding compound (per IEC 61249-2-21). The inner box label confirms JEDEC JESD97 compliance, and full material declarations are available via ST's Product Change Notification portal.

STTH810FP Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
-
Package/Case:
TO-220-2 Full Pack, Isolated Tab
Packaging:
Tube
Product Status:
Active
Technology:
Standard
Voltage - DC Reverse (Vr) (Max):
1000 V
Current - Average Rectified (Io):
8A
Voltage - Forward (Vf) (Max) @ If:
2 V @ 8 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
85 ns
Current - Reverse Leakage @ Vr:
5 µA @ 1000 V
Capacitance @ Vr, F:
-
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220FPAC
Operating Temperature - Junction:
175°C (Max)

STTH810FP FAQ

1.How can I place an order for STTH810FP through Aetrix?

Please submit a Request for Quotation (RFQ) for STTH810FP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STTH810FP reliable?

The price and inventory of STTH810FP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STTH810FP is usually 5 days.

3.What payment methods are accepted for STTH810FP?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STTH810FP transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STTH810FP?

STTH810FP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STTH810FP order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STTH810FP?

For technical support, including STTH810FP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STTH810FP requirements.

6.How does Aetrix verify that STTH810FP is sourced from the original manufacturer or authorized distributors?

All STTH810FP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STTH810FP meets industry standards.

7.What is the process for return or replacement of STTH810FP?

All STTH810FP units undergo pre-shipment inspection (PSI). If there is an issue with STTH810FP, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STTH810FP part is unused and in its original packaging.

Return procedure for STTH810FP:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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