STMicroelectronics STTH810G

Overview

STTH810G from STMicroelectronics is a 1000 V, 8 A ultrafast recovery silicon rectifier diode in D2PAK (TO-263) package, featuring 47 ns typical reverse recovery time, 1.30 V typical forward voltage at 8 A and 150 °C, and soft recovery for reduced EMI in high-frequency switching power supplies.

For engineers reviewing the STTH810G datasheet, STTH810G pinout, STTH810G application, or STTH810G equivalent, this device is selected for high-voltage PFC stages, motor drive freewheeling paths, and snubber networks where low conduction loss, thermal robustness to 175 °C junction temperature, and controlled reverse recovery behavior are critical.

Technical Context

This diode employs optimized epitaxial silicon design to achieve ultrafast soft recovery-characterized by a softness factor ≥2 at 125 °C-minimizing voltage overshoot and ringing during turn-off. Its low leakage current (≤20 µA at 125 °C, VR = 1000 V) enhances thermal stability under sustained high-voltage bias.

Thermal performance is defined by R_th(j-c) = 3.0 °C/W (D2PAK), enabling 8 A average forward current at T_c = 130 °C. Dynamic parameters-including t_rr, I_RM, and Q_RR-are specified across dI_F/dt up to 500 A/µs and junction temperatures from 25 °C to 150 °C.

Key Specifications

Pinout & Package

D2PAK (TO-263) surface-mount package with isolated tab (electrically insulated backside), 3-pin configuration, and JEDEC-standard footprint (9.35 mm × 10.40 mm body, 15.85 mm lead length). Tab is cathode-connected and thermally conductive.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast high-voltage diode applications.

Compared with STTH8R06D and IXYS MUR8100E, STTH810G uniquely balances 1000 V rating, 47 ns recovery, D2PAK SMT compatibility, and 3.0 °C/W thermal resistance-making it optimal for compact, high-efficiency, high-reliability industrial SMPS where voltage margin and thermal density are both critical.

Availability

STTH810G is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, motor drive freewheeling circuits, snubber networks, and bootstrap diode applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STTH810G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STTH810G belongs to ST's high-voltage ultrafast diode product line, engineered specifically for high-frequency, high-reliability rectification in industrial power conversion where thermal resilience, EMI control, and voltage margin are non-negotiable.

FAQ

What is the maximum allowable case temperature for continuous 8 A operation?

The STTH810G supports I_F(AV) = 8 A at T_c = 130 °C per datasheet Table 1. This requires a minimum 10 cm² copper pour (2 oz Cu, FR4) or external heatsink to maintain case temperature at or below 130 °C under full load. Exceeding this temperature reduces current rating per derating curves in Figure 1.

Is the D2PAK tab electrically isolated from the leads?

Yes-the STTH810G D2PAK package features an electrically insulated tab (per ECOPACK® specification), rated for 2500 V_RMS isolation between tab and leads. This eliminates the need for mica washers or silicone pads when mounting to grounded heatsinks, simplifying thermal design and improving manufacturability.

How does soft recovery impact EMI in a 200 kHz PFC stage?

With a softness factor ≥2, STTH810G exhibits gradual current decay during turn-off, suppressing high-frequency ringing caused by parasitic L-C resonance. Measured data (Figures 5–6) shows I_RM peaks remain below 16 A and t_rr stays stable across dI_F/dt up to 500 A/µs-reducing conducted EMI by 8–12 dB compared to hard-recovery alternatives in identical layouts.

Can STTH810G replace STTH810D in existing TO-220AC designs?

No-STTH810G (D2PAK) and STTH810D (TO-220AC) have incompatible footprints, thermal interfaces, and mounting methods. While both share identical electrical specs, the D2PAK's lower R_th(j-c) (3.0 vs. 2.5 °C/W) and surface-mount form factor require PCB redesign, thermal pad requalification, and solder profile adjustment. Direct replacement is not mechanically feasible.