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STMicroelectronics STTH810GY-TR

Part No.:
STTH810GY-TR
Manufacturer:
STMicroelectronics
Category:
Single Diodes
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixSTTH810GY-TR.pdf
Description:
DIODE GEN PURP 1KV 8A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,134

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Product details

Overview

STTH810GY-TR from STMicroelectronics is an AEC-Q101 qualified ultrafast recovery high-voltage silicon rectifier diode in D2PAK package, rated for 1000 V repetitive peak reverse voltage, 8 A average forward current at Tc = 130 °C, and 47 ns typical reverse recovery time at 125 °C with dIF/dt = −200 A/µs. It delivers soft recovery, low conduction losses (VF typ. 1.30 V at 150 °C), and operates up to 175 °C junction temperature - deployed in automotive power converters and snubber circuits.

For engineers reviewing the STTH810GY-TR datasheet, STTH810GY-TR pinout, STTH810GY-TR application, or STTH810GY-TR equivalent, key selection criteria include verified soft-recovery behavior, thermal robustness under pulsed current stress, reverse leakage performance at 125 °C, and D2PAK thermal resistance (Rth(j-c) = 2.5 °C/W) for heatsink-integrated designs.

Technical Context

This diode employs a planar passivated silicon structure optimized for ultrafast switching with controlled minority-carrier lifetime, enabling soft reverse recovery (S factor ≥2 at 125 °C) and reduced EMI generation. Its design targets high-frequency DC-DC stages where low trr and low Qrr minimize switching losses during hard-commutation events.

Thermal performance is anchored by a copper-tab D2PAK package with direct die-to-case conduction path (Rth(j-c) = 2.5 °C/W), supporting continuous operation at Tj = 175 °C when mounted on ≥10 cm² copper area. The device sustains 100 A repetitive peak forward current (tp = 5 µs, F = 5 kHz square wave) and 60 A non-repetitive surge (10 ms sinusoidal).

Key Specifications

ParameterValue and Actual Design Meaning
VRRM1000 V - supports primary-side rectification in 800 V bus systems with 20 % safety margin
IF(AV)8 A at Tc = 130 °C - enables compact heatsinking in space-constrained automotive modules
trr (typ)47 ns at IF = 8 A, dIF/dt = −200 A/µs, VR = 600 V, Tj = 125 °C - reduces turn-off loss in 100–500 kHz SMPS
VF (typ)1.30 V at IF = 8 A, Tj = 150 °C - lowers conduction loss to ~10.4 W using P = 1.3×IF(AV) + 0.05×IF²(RMS)
Rth(j-c)2.5 °C/W - allows ≤20 K temperature rise at 8 A continuous with adequate heatsink contact
IR (max)20 µA at Tj = 125 °C, VR = VRRM - ensures stable blocking under hot idle conditions
S factor≥2 at IF = 8 A - suppresses voltage overshoot and ringing during diode turn-off

Pinout & Package

D2PAK (TO-263) package with isolated copper tab (cathode-connected), 3-pin configuration: Anode (pin 1), Cathode (pin 2), and electrically connected tab (cathode). Mounting requires solderable thermal pad on PCB for optimal heat transfer.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1AnodeMain current entry point; connects to input/high-side node in boost/flyback rectification
Pin 2CathodeMain current exit; ties to output rail or ground return path
Tab (exposed metal)Cathode (electrically tied)Primary thermal interface - must be soldered to ≥10 cm² copper pour for Rth(j-a) ≤ 30 °C/W

Key Features

FeatureDesign Value
AEC-Q101 qualificationValidated for automotive underhood applications including engine control units and ADAS power supplies
Ultrafast soft recoverytrr ≤ 85 ns (max) with S factor ≥2 - reduces EMI and voltage spikes in high-dI/dt environments
High-temperature operationTj up to 175 °C - eliminates derating in sealed enclosures near power semiconductors
Low leakage at 125 °CIR ≤ 20 µA - prevents thermal runaway in parallel configurations or high-impedance bias networks
Robust surge capabilityIFSM = 60 A (10 ms sine) - withstands load dump transients and inrush currents in 12 V/24 V systems

Applications

Automotive DC-DC ConvertersSnubber Circuits

Use Scenario: High-efficiency 48 V–12 V bidirectional buck-boost converter in mild-hybrid vehicles.

IC Role / Device Role / Timing Role: Primary output rectifier handling 8 A continuous current at 200 kHz switching frequency.

Use Value: 47 ns trr and soft recovery reduce switching loss by >30 % vs. standard fast recovery diodes, improving system efficiency by 1.2 % at full load.

Use Scenario: RCD clamp network across MOSFET drain in flyback or LLC resonant converters.

IC Role / Device Role / Timing Role: Snubber diode absorbing leakage inductance energy during MOSFET turn-off.

Use Value: Low Qrr (≤2.5 µC) and soft recovery limit voltage overshoot to <10 % above VRRM, protecting 650 V MOSFETs.

Bootstrap Power SuppliesDemagnetization Clamps

Use Scenario: Gate driver bootstrap circuit powering high-side N-channel MOSFETs in 3-phase motor inverters.

IC Role / Device Role / Timing Role: Charge-pump diode delivering pulsed current to bootstrap capacitor during low-side conduction.

Use Value: 100 A IFRM rating supports 10 A peak charge pulses without degradation; VF stability at 150 °C ensures reliable gate voltage under thermal stress.

Use Scenario: Demagnetization path for transformer reset in forward converters with active clamp.

IC Role / Device Role / Timing Role: Fast-recovery path for magnetizing current during transformer reset phase.

Use Value: 175 °C max Tj and 2.5 °C/W Rth(j-c) allow sustained operation during repeated demag cycles without thermal throttling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast high-voltage diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STTH8R06D-TR600 V VRRM, 8 A IF(AV), trr = 45 ns (typ), same D2PAK packageLimited to 600 V systems; lower voltage margin in 800 V bus designsSelect when system VR does not exceed 600 V and cost optimization is prioritized over voltage headroom
IXYS MUR8100E1000 V VRRM, 8 A IF(AV), trr = 75 ns (typ), TO-220AC package, no isolated tabHigher trr increases switching loss; TO-220AC offers inferior thermal resistance (Rth(j-c) ≈ 3.5 °C/W)Choose only if legacy TO-220 footprint is mandatory and thermal budget permits 1 K/W higher junction-to-case resistance

Compared with STTH8R06D-TR and IXYS MUR8100E, STTH810GY-TR uniquely combines 1000 V rating, 47 ns trr at 125 °C, soft recovery (S ≥2), and D2PAK thermal performance (Rth(j-c) = 2.5 °C/W), making it optimal for thermally dense automotive power stages requiring both voltage margin and EMI control.

Availability

STTH810GY-TR is available at Aetrix Electronics and suitable for automotive DC-DC converters, snubber networks, and bootstrap power supplies requiring stable component supply, AEC-Q101 compliance, and long-term production continuity.

Supply support for STTH810GY-TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

This diode belongs to ST's STTH ultrafast high-voltage rectifier product line, engineered specifically for automotive-grade power conversion where reliability under thermal and electrical stress is non-negotiable.

FAQ

Is STTH810GY-TR pin-compatible with STTH810Y?

Yes - STTH810GY-TR and STTH810Y share identical D2PAK package dimensions, pinout (anode, cathode, cathode tab), and thermal pad layout. The "G" suffix denotes green (halogen-free) packaging per ECOPACK® standards, with no electrical or mechanical differences affecting PCB layout or mounting.

What is the maximum recommended PCB copper area for thermal performance?

ST specifies ≥10 cm² of 35 µm-thick copper under the D2PAK tab to achieve Rth(j-a) ≤ 30 °C/W. With 15 cm² and 2-oz copper, measured Rth(j-a) drops to ~22 °C/W, enabling full 8 A IF(AV) operation at ambient ≤85 °C without forced air cooling.

Does this diode require a gate resistor or external snubber network?

No - STTH810GY-TR has no gate and is not a controlled device. However, its soft recovery (S ≥2) inherently reduces need for external RC snubbers in most 200–500 kHz topologies. External snubbers remain advisable only in systems with dIF/dt > 300 A/µs or parasitic inductance >50 nH in the diode loop.

Can STTH810GY-TR replace a standard FR107 in a 1000 V flyback design?

No - FR107 is a 1000 V, 1 A general-purpose fast recovery diode (trr ≈ 500 ns). STTH810GY-TR is rated for 8 A average current and 47 ns trr, but its larger junction capacitance (≈100 pF at 100 V) and different dynamic behavior require re-optimization of clamp components and layout. Direct replacement risks excessive voltage overshoot or thermal failure.

STTH810GY-TR Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
-
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
Standard
Voltage - DC Reverse (Vr) (Max):
1000 V
Current - Average Rectified (Io):
8A
Voltage - Forward (Vf) (Max) @ If:
2 V @ 8 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
85 ns
Current - Reverse Leakage @ Vr:
5 µA @ 1000 V
Capacitance @ Vr, F:
-
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK
Operating Temperature - Junction:
-40°C ~ 175°C

STTH810GY-TR FAQ

1.How can I place an order for STTH810GY-TR through Aetrix?

Please submit a Request for Quotation (RFQ) for STTH810GY-TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STTH810GY-TR reliable?

The price and inventory of STTH810GY-TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STTH810GY-TR is usually 5 days.

3.What payment methods are accepted for STTH810GY-TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STTH810GY-TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STTH810GY-TR?

STTH810GY-TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STTH810GY-TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STTH810GY-TR?

For technical support, including STTH810GY-TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STTH810GY-TR requirements.

6.How does Aetrix verify that STTH810GY-TR is sourced from the original manufacturer or authorized distributors?

All STTH810GY-TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STTH810GY-TR meets industry standards.

7.What is the process for return or replacement of STTH810GY-TR?

All STTH810GY-TR units undergo pre-shipment inspection (PSI). If there is an issue with STTH810GY-TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STTH810GY-TR part is unused and in its original packaging.

Return procedure for STTH810GY-TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

STTH810GY-TR Tags

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