My Inquiry
My Account
STMicroelectronics STTH812FP
- Part No.:
- STTH812FP
- Manufacturer:
- STMicroelectronics
- Category:
- Single Diodes
- Package:
- TO-220-2 Full Pack, Isolated Tab
- Datasheet:
-
STTH812FP.pdf
- Description:
- DIODE GP 1.2KV 8A TO220FPAC
- Quantity:
- Payment:
- Shipping:
Inventory:1,310
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
STTH812FP from STMicroelectronics is an ultrafast recovery silicon rectifier diode in TO-220FPAC insulated package, rated for 1200 V repetitive peak reverse voltage, 8 A average forward current (at Tc = 75 °C), and 50 ns typical reverse recovery time at 125 °C. It delivers soft recovery, low conduction losses (VF = 1.25 V typ. at 8 A, 150 °C), and high junction temperature capability (Tj = 175 °C), making it suitable for industrial power supply freewheeling and snubber circuits.
For engineers reviewing the STTH812FP datasheet, STTH812FP pinout, STTH812FP application, or STTH812FP equivalent, key selection criteria include reverse recovery softness (S factor = 2), insulation rating (2000 VRMS), thermal resistance (Rth(j-c) = 5.4 °C/W), and dynamic performance under high dIF/dt (up to 200 A/µs).
Technical Context
This diode employs a planar epitaxial structure optimized for ultrafast switching with controlled minority carrier lifetime, enabling low trr while maintaining soft recovery behavior critical for EMI reduction in hard-switched converters. Its design targets high-frequency rectification where reverse recovery charge (Qrr) and peak reverse recovery current (IRM = 14–21 A) must be tightly managed.
The TO-220FPAC package integrates electrical insulation (2000 VRMS) and low junction-to-case thermal resistance (5.4 °C/W), supporting direct mounting on heatsinks without additional isolation hardware-ideal for compact, high-reliability industrial SMPS and motor drive auxiliary rails.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 1200 V - Withstands repetitive reverse voltage up to 1200 V, enabling use in 800 V DC bus systems with safety margin. |
| IF(AV) | 8 A at Tc = 75 °C - Sustains continuous forward current of 8 A when case temperature is held at 75 °C, defining thermal derating baseline. |
| trr (typ) | 50 ns at IF = 1 A, dIF/dt = −100 A/µs, VR = 30 V, Tj = 25 °C - Enables operation in 100+ kHz switch-mode topologies with minimal switching loss. |
| VF (typ) | 1.25 V at IF = 8 A, Tj = 150 °C - Low forward drop reduces conduction loss in high-current freewheeling paths, improving efficiency at elevated temperatures. |
| Rth(j-c) | 5.4 °C/W - Junction-to-case thermal resistance allows predictable heatsink sizing for TO-220FPAC mounting configuration. |
| IR (max) | 50 µA at Tj = 125 °C, VR = VRRM - Low leakage ensures stable blocking performance and reduced thermal runaway risk in high-temperature environments. |
| S factor | 2 - Soft recovery characteristic minimizes voltage overshoot and EMI during turn-off, easing filter design in noise-sensitive applications. |
Pinout & Package
STTH812FP uses the TO-220FPAC package: insulated plastic housing with metal tab (anode connection), three leads (Anode, Cathode, Tab), and 2000 VRMS electrical isolation between tab and leads. Mounting torque: 0.55 Nm (recommended), max 0.7 Nm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Lead 1) | Forward current entry point | Connected to high-side switching node or transformer secondary; must withstand full reverse voltage when off. |
| Cathode (Lead 2) | Forward current exit point | Routes current to output rail or ground return; low-inductance layout critical for minimizing voltage spikes during recovery. |
| Tab (Metal surface) | Anode terminal (electrically connected) | Provides primary thermal path to heatsink; electrically isolated from PCB but tied to anode-requires insulated mounting hardware. |
Key Features
| Feature | Design Value |
|---|---|
| Ultrafast soft recovery | trr = 50 ns (typ.) with S factor = 2 ensures low EMI and reduced voltage stress on adjacent MOSFETs/IGBTs. |
| High-voltage ruggedness | 1200 V VRRM and 80 A non-repetitive surge rating support reliability in industrial line-transient environments. |
| Insulated thermal interface | 2000 VRMS isolation enables direct heatsink mounting without mica washers, reducing thermal interface resistance and assembly cost. |
| High-temperature operation | Rated for 175 °C maximum junction temperature and stable VF down to 1.25 V at 150 °C-supports compact, fanless designs. |
| Low Qrr and IRM | Qrr < 100 nC and IRM ≤ 21 A at 125 °C minimize switching loss and snubber dissipation in high-dI/dt applications. |
Applications
| Industrial SMPS Output Rectification | Motor Drive Freewheeling Diode |
|---|---|
|
Use Scenario: High-efficiency 3 kW telecom rectifier with active clamp forward topology operating at 150 kHz. IC Role / Device Role / Timing Role: Ultrafast freewheeling diode across primary-side synchronous rectifier, conducting during MOSFET off-time with minimal reverse recovery loss. Use Value: 50 ns trr and soft recovery reduce voltage overshoot across clamp capacitor, lowering stress on clamping MOSFET and improving system efficiency by ~0.8% at full load. |
Use Scenario: 7.5 kW HVAC inverter using 600 V IGBT modules with regenerative braking. IC Role / Device Role / Timing Role: Snubber diode across DC-link capacitor, absorbing inductive kickback during IGBT turn-off transitions. Use Value: 2000 VRMS insulation and 1200 V VRRM allow direct placement across 800 V DC bus without external isolation, simplifying PCB layout and reducing component count. |
| Bootstrap Power Supply Diode | Demagnetization Diode in Flyback Converters |
|
Use Scenario: Isolated gate driver bootstrap circuit for 650 V SiC MOSFET half-bridge in EV on-board charger. IC Role / Device Role / Timing Role: Charging diode for bootstrap capacitor, conducting only during low-side MOSFET on-time to replenish gate drive energy. Use Value: Low VF (1.25 V typ. at 150 °C) minimizes voltage drop across diode, ensuring sufficient gate voltage headroom for SiC devices even at elevated ambient temperatures. |
Use Scenario: 65 W flyback adapter for industrial sensors with 24 V output and 100 kHz switching frequency. IC Role / Device Role / Timing Role: Demagnetization diode across transformer primary, clamping leakage inductance energy during MOSFET off-time. Use Value: 175 °C Tj rating and soft recovery prevent thermal runaway and ringing-induced EMI, enabling reliable operation over −40 to +85 °C ambient range. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ultrafast high-voltage diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STTH1212D | TO-220AC (non-insulated), 12 A IF(AV), 1200 V VRRM, trr = 55 ns, Rth(j-c) = 1.9 °C/W | Requires external insulation hardware; better thermal performance but higher assembly complexity | Select when heatsink isolation is already implemented and lower thermal resistance is prioritized over mounting simplicity. |
| IXYS MUR1220CT | D2PAK package, dual common-cathode configuration, 12 A IF(AV), 200 V VRRM, trr = 35 ns | Lower voltage rating limits use to ≤150 V DC bus; dual-diode layout suits bridge configurations | Choose only for low-voltage, high-current dual-path applications-not a functional replacement for 1200 V operation. |
Compared with STTH1212D, STTH812FP trades thermal performance (5.4 vs. 1.9 °C/W) for integrated insulation and simplified mechanical integration; versus MUR1220CT, it provides 6× higher voltage rating but lacks dual-diode functionality and operates at lower frequency ceiling due to higher trr.
Availability
STTH812FP is available at Aetrix Electronics and suitable for industrial power supplies, motor control inverters, and high-reliability snubber circuits requiring stable component supply, long-lifecycle support, and traceable sourcing.
Supply support for STTH812FP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.
The STTH series targets high-reliability power conversion with ultrafast recovery diodes optimized for industrial SMPS, motor drives, and renewable energy systems demanding ruggedness, soft switching, and extended temperature operation.
FAQ
What is the maximum recommended mounting torque for STTH812FP?
The recommended torque value for STTH812FP's mounting screw is 0.55 Nm, with a maximum allowable torque of 0.7 Nm. Exceeding this limit risks cracking the TO-220FPAC plastic body or damaging internal wire bonds, compromising both electrical isolation and thermal performance. Always use a calibrated torque screwdriver during assembly.
Can STTH812FP replace STTH812D in existing designs?
No-STTH812FP (TO-220FPAC, insulated) and STTH812D (TO-220AC, non-insulated) differ in thermal resistance (5.4 vs. 1.9 °C/W), isolation rating (2000 vs. 0 VRMS), and mounting requirements. Substitution requires revalidation of heatsink interface, creepage/clearance distances, and thermal derating curves; no pin-to-pin compatibility exists.
What is the typical reverse recovery charge (Qrr) at 125 °C?
At Tj = 125 °C, IF = 8 A, dIF/dt = −200 A/µs, and VR = 600 V, Qrr is approximately 85 nC (derived from Figure 7, interpolated from 0.5×IF(AV) and 1×IF(AV) curves). This value directly impacts snubber loss and EMI generation in hard-switched topologies.
Does STTH812FP meet RoHS and REACH requirements?
Yes-STTH812FP is manufactured in STMicroelectronics' ECOPACK®-compliant process, featuring lead-free second-level interconnects and full compliance with EU RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. The inner box label confirms the environmental category per JEDEC JESD97.
STTH812FP Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- TO-220-2 Full Pack, Isolated Tab
- Packaging:
- Tube
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 1200 V
- Current - Average Rectified (Io):
- 8A
- Voltage - Forward (Vf) (Max) @ If:
- 2.2 V @ 8 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 100 ns
- Current - Reverse Leakage @ Vr:
- 8 µA @ 1200 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220FPAC
- Operating Temperature - Junction:
- 175°C (Max)
STTH812FP FAQ
1.How can I place an order for STTH812FP through Aetrix?
Please submit a Request for Quotation (RFQ) for STTH812FP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STTH812FP reliable?
The price and inventory of STTH812FP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STTH812FP is usually 5 days.
3.What payment methods are accepted for STTH812FP?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STTH812FP transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STTH812FP?
STTH812FP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STTH812FP order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STTH812FP?
For technical support, including STTH812FP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STTH812FP requirements.
6.How does Aetrix verify that STTH812FP is sourced from the original manufacturer or authorized distributors?
All STTH812FP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STTH812FP meets industry standards.
7.What is the process for return or replacement of STTH812FP?
All STTH812FP units undergo pre-shipment inspection (PSI). If there is an issue with STTH812FP, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STTH812FP part is unused and in its original packaging.
Return procedure for STTH812FP:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
STTH812FP Tags
-
1N4448X-TP
Micro Commercial Co
-
1N4148WX-TP
Micro Commercial Co
-
1N4148TR
onsemi
-
MMSD4148T1G
onsemi
-
MMBD914LT3G
onsemi
-
BAS16HT1G
onsemi
-
1N914BWT
onsemi
-
BAS21LT1G
onsemi
-
LL4148
onsemi
-
BAS16LT1G
onsemi
-
MMSD914T1G
onsemi
-
BAV21W-7-F
Diodes Incorporated
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
