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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

STMicroelectronics STTH812G

Name: STTH812G
Brand: STMicroelectronics
SKU: STTH812G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STTH812G

Manufacturer:: STMicroelectronics

Category:: Single Diodes

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STTH812G.pdf

Description:: DIODE GEN PURP 1.2KV 8A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STTH812G from STMicroelectronics is a 1200 V, 8 A ultrafast recovery silicon rectifier diode in D2PAK (TO-263) package, optimized for high-frequency switching, low conduction loss, and soft reverse recovery (typ. trr = 50 ns at 125 °C, dIF/dt = −200 A/µs). It delivers VF = 1.25 V (typ.) at 8 A and 150 °C, supports Tj up to 175 °C, and serves as a freewheeling or snubber diode in industrial SMPS and motor drives.

For engineers reviewing the STTH812G datasheet, STTH812G pinout, STTH812G application, or STTH812G equivalent, key selection criteria include reverse recovery softness (S factor = 2), junction-to-case thermal resistance (Rth(j-c) = 2.5 °C/W), insulation capability (non-insulated D2PAK), and compatibility with high-dI/dt (>200 A/µs) hard-switching topologies.

Technical Context

This diode employs a platinum-doped lifetime-controlled silicon structure enabling ultrafast, soft recovery with low IRM (14–21 A) and controlled Qrr (typ. ~1.2 µC at 125 °C). Its dynamic behavior is characterized under high dIF/dt (−200 A/µs) and VR = 600 V, ensuring predictable turn-off in hard-switched PFC and IGBT clamp circuits.

Thermal design relies on direct case conduction via the D2PAK copper tab (Rth(j-c) = 2.5 °C/W), with junction temperature validated up to 175 °C. Static performance includes low leakage (IR ≤ 50 µA at 125 °C, VR = 1200 V) and stable VF across temperature (1.25 V typ. at 150 °C, 8 A).

Key Specifications

Parameter	Value and Actual Design Meaning
VRRM	1200 V - Withstands repetitive reverse voltage up to 1200 V, suitable for 800 V DC bus systems with 50 % safety margin.
IF(AV)	8 A at Tc = 140 °C - Average forward current rating assuming heatsink-controlled case temperature, not ambient.
trr (typ)	50 ns at Tj = 125 °C, dIF/dt = −200 A/µs - Enables operation in 100+ kHz switch-mode topologies with minimal switching loss.
VF (typ)	1.25 V at IF = 8 A, Tj = 150 °C - Low conduction loss reduces power dissipation in high-current freewheeling paths.
S factor	2 - Soft recovery minimizes voltage overshoot and EMI during turn-off in inductive switching circuits.
Rth(j-c)	2.5 °C/W - Thermal resistance from junction to D2PAK tab enables efficient heat transfer to PCB copper or heatsink.
IRM (max)	21 A at Tj = 125 °C - Peak reverse recovery current limits stress on clamping components and gate drivers.

Pinout & Package

D2PAK (TO-263) package: surface-mount, single-row 3-lead outline with exposed metal tab (cathode-connected) for thermal and electrical anchoring. No internal insulation; tab is electrically active (cathode). Mounting requires solderable copper area ≥ 15 cm² on FR4 for Rth(j-a) < 40 °C/W.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Anode)	Forward current entry	Connected to AC input or switching node; must withstand pulsed IFRM = 100 A (5 µs square wave).
Pin 2 (Cathode)	Forward current exit / common output	Internally bonded to exposed tab; requires low-inductance PCB routing to minimize VFP overshoot.
Tab (Cathode)	Primary thermal path & cathode connection	Electrically identical to Pin 2; must be soldered to ≥ 15 cm² copper pour for thermal compliance.

Key Features

Feature	Design Value
Ultrafast soft recovery	trr = 50 ns with S factor = 2 ensures low EMI and reduced snubber losses in high-dI/dt circuits.
High-temperature operation	Tj(max) = 175 °C enables reliable use in enclosed industrial enclosures without derating at 125 °C ambient.
Low leakage guard band	IR ≤ 50 µA at 125 °C prevents thermal runaway in parallel-connected configurations.
Optimized for hard switching	Validated at dIF/dt = −200 A/µs and VR = 600 V - matches IGBT and SiC MOSFET turn-off dynamics.
ECOPACK® lead-free	Meets JEDEC JESD97; second-level interconnect marked on package for RoHS-compliant reflow assembly.

Applications

Industrial SMPS Rectification

IGBT Freewheeling Clamp

Use Scenario: Output rectification in 3 kW telecom or server PSUs operating at 100–200 kHz with 800 V DC bus.

IC Role / Device Role / Timing Role: Main power rectifier handling 8 A average forward current with minimal conduction loss and fast turn-off.

Use Value: VF = 1.25 V (150 °C) cuts conduction loss by ~18 % vs. standard fast diodes, improving full-load efficiency.

Use Scenario: Anti-parallel freewheeling path across 1200 V IGBTs in variable-frequency motor drives.

IC Role / Device Role / Timing Role: Clamps inductive energy during IGBT turn-off; recovers before next switching cycle.

Use Value: Soft trr = 50 ns suppresses voltage spikes > 100 V, eliminating need for external RC snubbers.

Snubber Network Diode

Bootstrap Power Supply

Use Scenario: RCD snubber in LLC resonant converters where diode conducts brief high-dI/dt pulses.

IC Role / Device Role / Timing Role: Captures leakage inductance energy during primary switch turn-off.

Use Value: IRM = 21 A peak and tfr = 400 ns ensure robust capture of 100 A/µs transients without oscillation.

Use Scenario: High-side gate driver bootstrap diode in 3-phase BLDC inverters with 600 V bus.

IC Role / Device Role / Timing Role: Charges bootstrap capacitor during low-side conduction; blocks 600 V during high-side on-time.

Use Value: VRRM = 1200 V provides 2× margin over 600 V bus; low Qrr prevents capacitor discharge during fast transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast 1200 V rectifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS MUR812E	trr = 65 ns (typ.), VF = 1.35 V (150 °C), Rth(j-c) = 3.0 °C/W, TO-220AC package	Requires through-hole mounting and larger heatsink; higher VF increases conduction loss by ~8 % at 8 A.	Preferred when legacy TO-220 layout exists and surface-mount thermal constraints prevent D2PAK use.
Vishay VS-8EWH12FN-M3	trr = 45 ns (typ.), VF = 1.22 V (150 °C), Rth(j-c) = 2.3 °C/W, D2PAK package, AEC-Q101 qualified	Automotive-qualified; tighter parametric distribution but higher cost and longer lead time.	Selected for automotive traction inverters requiring extended temperature validation and PPAP support.

Compared with MUR812E, STTH812G offers lower thermal resistance and surface-mount flexibility; versus VS-8EWH12FN-M3, it trades automotive qualification for cost-sensitive industrial volume deployment without AEC requirements.

Availability

STTH812G is available at Aetrix Electronics and suitable for industrial SMPS rectification, IGBT freewheeling clamp, and snubber network applications requiring stable component supply, long-lifecycle support, and RoHS-compliant manufacturing.

Supply support for STTH812G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STTH812G belongs to ST's high-voltage ultrafast diode product line, engineered specifically for high-efficiency, high-reliability power conversion in industrial motor drives and telecom power supplies.

FAQ

Is STTH812G pin-compatible with other D2PAK rectifiers like STTH1208D?

No. STTH812G has anode-cathode-tab pinout (1-2-tab), while STTH1208D uses cathode-anode-tab (2-1-tab) configuration. Mechanical footprint matches D2PAK standard, but polarity reversal risks circuit damage if substituted without layout verification.

What is the maximum recommended PCB copper area for thermal performance?

ST specifies ≥15 cm² of 2-oz copper connected to the D2PAK tab for Rth(j-a) ≤ 40 °C/W. For continuous 8 A operation at 175 °C junction, ≥25 cm² with thermal vias to inner layers is advised to maintain Tc ≤ 140 °C.

Does STTH812G support reflow soldering per JEDEC J-STD-020?

Yes. As an ECOPACK® device, STTH812G is qualified for lead-free reflow with peak temperature ≤ 260 °C (per J-STD-020D), and its D2PAK package withstands standard profile ramp rates and dwell times without delamination or voiding.

Can STTH812G replace STTH812D in existing TO-220AC designs?

No direct replacement: STTH812D is through-hole TO-220AC (anode-tab-cathode), while STTH812G is surface-mount D2PAK (anode-cathode-tab). Layout, thermal path, and mechanical mounting differ fundamentally; redesign is required for substitution.

STTH812G Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

Technology:: Standard

Voltage - DC Reverse (Vr) (Max):: 1200 V

Current - Average Rectified (Io):: 8A

Voltage - Forward (Vf) (Max) @ If:: 2.2 V @ 8 A

Speed:: Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr):: 100 ns

Current - Reverse Leakage @ Vr:: 8 µA @ 1200 V

Capacitance @ Vr, F:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

Operating Temperature - Junction:: 175°C (Max)

STTH812G FAQ

1.How can I place an order for STTH812G through Aetrix?

Please submit a Request for Quotation (RFQ) for STTH812G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STTH812G reliable?

The price and inventory of STTH812G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STTH812G is usually 5 days.

3.What payment methods are accepted for STTH812G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STTH812G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STTH812G?

STTH812G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STTH812G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STTH812G?

For technical support, including STTH812G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STTH812G requirements.

6.How does Aetrix verify that STTH812G is sourced from the original manufacturer or authorized distributors?

All STTH812G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STTH812G meets industry standards.

7.What is the process for return or replacement of STTH812G?

All STTH812G units undergo pre-shipment inspection (PSI). If there is an issue with STTH812G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STTH812G part is unused and in its original packaging.

Return procedure for STTH812G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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