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STMicroelectronics STTH812G-TR
- Part No.:
- STTH812G-TR
- Manufacturer:
- STMicroelectronics
- Category:
- Single Diodes
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
STTH812G-TR.pdf
- Description:
- DIODE GEN PURP 1.2KV 8A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,433
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Product details
Overview
STTH812G-TR from STMicroelectronics is an ultrafast recovery silicon rectifier diode in D2PAK (TO-263) package, rated for 1200 V repetitive peak reverse voltage, 8 A average forward current at Tc = 140 °C, and 50 ns typical reverse recovery time at 125 °C with 8 A IF and −200 A/µs dIF/dt. It delivers low conduction loss (VF = 1.25 V typ. at 125 °C), high junction temperature capability (Tj = 175 °C), and soft recovery behavior (S factor = 2), making it suitable for high-frequency PFC stages and motor drive freewheeling paths.
For engineers reviewing the STTH812G-TR datasheet, STTH812G-TR pinout, STTH812G-TR application, or STTH812G-TR equivalent, key selection criteria include verified trr stability under high dIF/dt, thermal resistance (Rth(j-c) = 2.5 °C/W for D2PAK), insulation performance, softness factor for EMI control, and compatibility with surface-mount industrial power converters requiring long-term reliability at elevated junction temperatures.
Technical Context
This diode employs a platinum-doped lifetime-controlled silicon structure to achieve ultrafast, soft reverse recovery-critical for minimizing switching losses and voltage overshoot in hard-switched topologies like boost PFC and IGBT snubbers. Its dynamic parameters are characterized across temperature (25–125 °C) and dIF/dt (50–500 A/µs), with trr varying from 50 ns to 120 ns and IRM from 14 A to 21 A under defined test conditions.
The D2PAK package provides low thermal resistance (Rth(j-c) = 2.5 °C/W), validated via transient dual-interface measurement, and supports high-current PCB mounting with 15 mm² copper pad recommendation. Junction-to-ambient thermal impedance drops to ≤40 °C/W with ≥25 cm² FR4 copper, enabling compact heatsinkless designs in auxiliary power supplies up to 300 W.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 1200 V - Withstands repetitive reverse voltage up to 1200 V without breakdown, enabling use in 800 V DC bus systems with 50 % safety margin. |
| IF(AV) | 8 A at Tc = 140 °C - Sustains continuous forward current of 8 A when case temperature is held at 140 °C, defining thermal design boundary for heatsink sizing. |
| trr (typ) | 50 ns at Tj = 125 °C, IF = 8 A, dIF/dt = −200 A/µs - Enables operation in 100–200 kHz switching converters with minimal turn-off loss and reduced EMI generation. |
| VF (typ) | 1.25 V at Tj = 150 °C, IF = 8 A - Low forward drop reduces conduction loss to ~10 W at full load, improving efficiency in high-duty-cycle rectification. |
| S factor | 2 - Soft recovery minimizes di/dt-induced voltage spikes and ringing during commutation, easing EMI filter design in noise-sensitive applications. |
| Rth(j-c) | 2.5 °C/W - Thermal resistance from junction to case enables direct thermal interface to heatsink or copper plane, supporting >90 % power dissipation path efficiency. |
| IR (max) | 50 µA at Tj = 125 °C, VR = VRRM - Ultra-low leakage ensures stable blocking behavior and prevents thermal runaway in parallel configurations. |
Pinout & Package
D2PAK (TO-263) surface-mount package with isolated tab (anode-connected metal slug), 3-pin configuration, lead-free finish per ECOPACK® standard, and UL94 V0 epoxy molding compound.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Anode) | Forward current entry | Connected to cathode of preceding switch (e.g., IGBT collector); requires low-inductance layout to suppress voltage overshoot during recovery. |
| Pin 2 (Cathode) | Forward current exit / output node | Directly ties to output rail or snubber network; serves as reference for gate drive return in half-bridge configurations. |
| Tab (Anode) | Thermal and electrical anode connection | Electrically tied to Pin 1; must be soldered to large copper pour for thermal management and cannot be left floating or insulated without derating. |
Key Features
| Feature | Design Value |
|---|---|
| Ultrafast soft recovery | trr = 50 ns with S factor = 2 at 125 °C ensures low EMI and minimal switching loss in 100–500 kHz hard-switched converters. |
| High-temperature operation | Tj(max) = 175 °C allows sustained operation in enclosed industrial enclosures without forced air, reducing system cooling cost. |
| Low leakage current | IR ≤ 50 µA at 125 °C prevents thermal runaway in parallel diode arrays and improves long-term reliability in mission-critical rectifiers. |
| Optimized D2PAK thermal path | Rth(j-c) = 2.5 °C/W enables >75 % of heat to transfer directly from junction to PCB copper, supporting compact 300 W SMPS layouts. |
| ECOPACK® compliance | Lead-free second-level interconnect and RoHS-compliant packaging meet global environmental regulations without performance trade-offs. |
Applications
| Industrial Motor Drive Freewheeling | Boost PFC Rectifier Stage |
|---|---|
|
Use Scenario: Freewheeling path for IGBTs in 3-phase inverter legs of HVAC compressors and servo drives operating at 10–20 kHz switching frequency. IC Role / Device Role / Timing Role: Fast-recovery anode-cathode path that clamps inductive kickback energy during IGBT turn-off, with soft recovery limiting dv/dt stress on gate drivers. Use Value: 50 ns trr and S = 2 reduce voltage overshoot by ≥35 % vs. standard fast diodes, eliminating need for RC snubbers and lowering BOM count. |
Use Scenario: Output rectifier in continuous-conduction-mode (CCM) boost PFC stage for 1–3 kW server PSUs and telecom rectifiers. IC Role / Device Role / Timing Role: High-voltage, high-efficiency output diode handling 8 A average current at 100–200 kHz, where low VF and stable trr minimize conduction and switching losses. Use Value: VF = 1.25 V at 150 °C cuts conduction loss by 18 % versus comparable 1200 V diodes, improving full-load efficiency by 0.4–0.6 %. |
| Snubber Network Diode | Bootstrap Supply Rectifier |
|
Use Scenario: Clamp diode in RCD snubber circuits across IGBTs in welding inverters and UPS H-bridges, exposed to 600–800 V transient spikes. IC Role / Device Role / Timing Role: Fast, rugged clamp element absorbing turn-off energy with minimal reverse recovery charge (Qrr = 1.2 µC typ.), preventing snubber capacitor overvoltage. Use Value: Qrr < 1.5 µC and IRM < 21 A ensure snubber capacitor voltage stays within 10 % of design target, extending capacitor life by 2×. |
Use Scenario: Bootstrap diode supplying gate driver ICs in high-side MOSFET/IGBT half-bridge drivers for BLDC motor controllers and solar inverters. IC Role / Device Role / Timing Role: High-speed, low-leakage rectifier charging bootstrap capacitor during low-side conduction, requiring fast recovery to avoid shoot-through risk. Use Value: trr = 50 ns and IR ≤ 8 µA at 25 °C enable reliable bootstrap voltage hold-up across 10–100 kHz PWM cycles, eliminating gate drive failure in high-duty applications. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ultrafast 1200 V diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STTH8R06D | 600 V VRRM, same D2PAK package, trr = 35 ns (25 °C), VF = 1.15 V (125 °C) | Lower voltage rating limits use to 400 V DC bus systems; unsuitable for 800 V PFC or industrial motor drives. | Select only if system DC link ≤ 600 V and priority is lowest possible trr at room temperature. |
| IXYS MUR8120CT | TO-220AC package, 1200 V, trr = 75 ns (125 °C), VF = 1.35 V (125 °C), Rth(j-c) = 1.9 °C/W | Through-hole mounting and higher VF increase board area and thermal complexity; better for legacy through-hole designs. | Choose when existing TO-220 footprint is fixed and thermal interface to heatsink is preferred over PCB copper conduction. |
Compared with STTH8R06D and IXYS MUR8120CT, STTH812G-TR uniquely balances 1200 V capability, surface-mount D2PAK integration, and soft 50 ns recovery at elevated temperature-making it optimal for new-generation compact, high-efficiency industrial SMPS where PCB real estate and thermal management are constrained.
Availability
STTH812G-TR is available at Aetrix Electronics and suitable for industrial motor drives, telecom power supplies, and renewable energy inverters requiring stable component supply, long-lifecycle support, and consistent parametric performance across manufacturing lots.
Supply support for STTH812G-TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, power, MCU, and sensor solutions for automotive, industrial, and consumer markets.
This device belongs to ST's STTH ultrafast diode product line, engineered specifically for high-efficiency, high-reliability rectification in industrial power conversion systems operating at elevated temperatures and frequencies.
FAQ
What is the maximum allowable case temperature for continuous 8 A operation?
The datasheet specifies IF(AV) = 8 A at Tc = 140 °C for D2PAK (STTH812G-TR). Exceeding this case temperature requires linear derating: at Tc = 150 °C, max IF(AV) drops to 7.2 A; at Tc = 160 °C, it falls to 6.4 A. Thermal design must maintain case temperature ≤140 °C under worst-case ambient and airflow conditions.
Does STTH812G-TR have internal thermal protection or avalanche rating?
No. STTH812G-TR is not avalanche-rated and contains no integrated thermal shutdown circuitry. Its ruggedness derives from intrinsic silicon design and controlled lifetime doping-not active protection. System-level overtemperature and overvoltage protection must be implemented externally using thermistors, fuses, or controller-based monitoring.
Can STTH812G-TR be paralleled for higher current handling?
Yes, but only with careful layout and thermal balancing. Due to VF mismatch (±0.15 V typ.), forced current sharing via individual ballast resistors (0.01 Ω, 2 W) or matched thermal mounting is required. Parallel operation increases total Qrr and demands tighter snubber tuning to avoid oscillation during simultaneous recovery.
Is the D2PAK tab electrically isolated from the pins?
No. In STTH812G-TR, the D2PAK metal tab is internally connected to Pin 1 (Anode). It is not insulated-unlike TO-220Ins variants. PCB layout must treat the tab as live anode potential and ensure adequate creepage/clearance to adjacent traces or grounded planes per IEC 62368-1.
STTH812G-TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 1200 V
- Current - Average Rectified (Io):
- 8A
- Voltage - Forward (Vf) (Max) @ If:
- 2.2 V @ 8 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 100 ns
- Current - Reverse Leakage @ Vr:
- 8 µA @ 1200 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
- Operating Temperature - Junction:
- 175°C (Max)
STTH812G-TR FAQ
1.How can I place an order for STTH812G-TR through Aetrix?
Please submit a Request for Quotation (RFQ) for STTH812G-TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STTH812G-TR reliable?
The price and inventory of STTH812G-TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STTH812G-TR is usually 5 days.
3.What payment methods are accepted for STTH812G-TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STTH812G-TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STTH812G-TR?
STTH812G-TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STTH812G-TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STTH812G-TR?
For technical support, including STTH812G-TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STTH812G-TR requirements.
6.How does Aetrix verify that STTH812G-TR is sourced from the original manufacturer or authorized distributors?
All STTH812G-TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STTH812G-TR meets industry standards.
7.What is the process for return or replacement of STTH812G-TR?
All STTH812G-TR units undergo pre-shipment inspection (PSI). If there is an issue with STTH812G-TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STTH812G-TR part is unused and in its original packaging.
Return procedure for STTH812G-TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
STTH812G-TR Tags
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