Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

STMicroelectronics STTH8R02DDJFY-TR

Part No.:
STTH8R02DDJFY-TR
Manufacturer:
STMicroelectronics
Category:
Diode Arrays
Package:
8-PowerVDFN
Datasheet:
AetrixSTTH8R02DDJFY-TR.pdf
Description:
DIODE ARRAY GP 200V 4A POWERFLAT
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,837

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

STTH8R02DDJFY-TR from STMicroelectronics is an AEC-Q101-qualified dual ultrafast rectifier in PowerFLAT™ 5x6 Dual Island package, rated for 200 V repetitive peak reverse voltage and 4 A average forward current per diode, with typical forward voltage of 0.71 V at 150 °C and 16 ns reverse recovery time - deployed in automotive switching-mode base drive and free-wheeling circuits.

For engineers reviewing the STTH8R02DDJFY-TR datasheet, STTH8R02DDJFY-TR pinout, STTH8R02DDJFY-TR application, or STTH8R02DDJFY-TR equivalent, key selection criteria include dual-diode thermal coupling, wettable flanks for automated optical inspection, low conduction loss (P = 0.72 × IF(AV) + 0.040 × IF²(RMS)), AEC-Q101 qualification, and PPAP capability for automotive power systems.

Technical Context

The STTH8R02DDJFY-TR integrates two independent ultrafast silicon rectifiers in a single thermally coupled PowerFLAT™ 5x6 Dual Island package, enabling shared heatsinking while maintaining electrical isolation between diodes. Each diode exhibits 23 ns typical reverse recovery time at 1 A / −50 A/µs and 15 ns at −100 A/µs, with negligible switching losses due to low Qrr (65 nC) and IRM (6.0 A).

It operates across −40 °C to +175 °C junction temperature range, supported by Rth(j-c) = 5 °C/W per diode and total thermal coupling of 3 °C/W. The device uses planar epitaxial technology optimized for high dI/dt immunity and stable VF drift over temperature - critical for automotive transistor snubbing and synchronous rectification assist.

Key Specifications

Parameter Value and Actual Design Meaning
VRRM 200 V - supports 12 V/24 V automotive bus-derived DC-DC stages with 2× safety margin against load dump transients
IF(AV) 2 × 4 A - enables dual-path 8 A total average forward current handling with shared thermal path
VF (typ.) 0.71 V @ 150 °C, 4 A - reduces conduction loss to ≤0.72×IF(AV) + 0.040×IF(RMS)² in high-temp operation
trr (typ.) 16 ns - minimizes switching loss and EMI in >100 kHz SMPS base-drive and freewheeling applications
Tj(max) +175 °C - allows direct mounting on engine-control PCBs without external heatsink in space-constrained modules
Rth(j-c) 5 °C/W per diode - enables 4 W dissipation per diode at ΔT = 20 °C case-to-junction rise
Qrr 65 nC - limits reverse recovery energy loss during hard-switching transitions in motor gate drive circuits

Pinout & Package

STTH8R02DDJFY-TR uses the PowerFLAT™ 5x6 Dual Island package (95 mg), featuring two isolated copper pads (A1/K1 and A2/K2) for cathode/anode connections per diode, with wettable flanks for automated optical inspection. Package dimensions: 6.0 × 5.2 × 1.0 mm (L × W × H), with 1.27 mm pitch between centerlines of dual pads.

Pin/Terminal Circuit Role Design Meaning
A1 Anode 1 Input terminal for first diode; connects to switching node in half-bridge freewheeling path
K1 Cathode 1 Output terminal for first diode; ties to common rail or gate driver return
A2 Anode 2 Independent input for second diode; used for complementary base drive clamping
K2 Cathode 2 Independent output for second diode; routed to separate control loop reference

Key Features

Feature Design Value
AEC-Q101 qualification Validated for automotive under-hood use including temperature cycling, humidity bias, and mechanical shock per JESD22 standards
Dual Island thermal architecture Two electrically isolated but thermally coupled die islands enable shared PCB copper area for 3 °C/W total Rth(j-c)
Wettable flanks Side-wall plating meets IPC-J-STD-020 requirements for automated solder joint inspection in SMT lines
Low Qrr & trr 65 nC Qrr and 16 ns trr reduce turn-off loss and dv/dt-induced shoot-through risk in IGBT/MOSFET gate drivers
ECOPACK®2 compliance Lead-free, halogen-free, RoHS-compliant construction with NiPdAu termination finish

Applications

Automotive Engine Control Unit (ECU) Base Drive Clamping 12 V Automotive DC-DC Converter Freewheeling Diode

Use Scenario: Clamping inductive flyback from NPN/PNP transistor base drive circuits in engine timing and fuel injection modules.

IC Role / Device Role / Timing Role: Ultrafast freewheeling diode providing sub-20 ns recovery to prevent transistor saturation delay and secondary breakdown.

Use Value: Enables 100+ kHz switching frequency with <1% duty-cycle penalty and eliminates need for external snubbers.

Use Scenario: Secondary-side freewheeling in buck-derived 12 V → 5 V/3.3 V converters powering CAN/LIN transceivers and microcontrollers.

IC Role / Device Role / Timing Role: Dual-diode rectifier delivering 4 A per channel with shared thermal mass to maintain <125 °C junction temp at full load.

Use Value: Reduces board area by 35% vs. discrete SO-8 diodes while meeting PPAP traceability and AEC-Q101 stress test requirements.

Electric Power Steering (EPS) Motor Gate Drive Snubber Automotive HVAC Blower Inverter Freewheeling

Use Scenario: Snubbing reverse recovery current spikes during high-dI/dt (>200 A/µs) commutation in 3-phase EPS inverter half-bridges.

IC Role / Device Role / Timing Role: Low-Qrr ultrafast diode placed across each IGBT collector-emitter to absorb turn-off energy.

Use Value: Limits peak VCE overshoot to <250 V during 75 A surge events, preventing IGBT avalanche failure.

Use Scenario: Freewheeling path in 24 V brushed blower motor inverters used in cabin air distribution systems.

IC Role / Device Role / Timing Role: Dual-channel rectifier supporting bidirectional PWM control with independent anode routing for H-bridge symmetry.

Use Value: Maintains <0.8 V forward drop at 150 °C ambient, reducing thermal derating and enabling smaller heatsinks.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast dual rectifier applications.

Alternative Part Technical Difference Application Difference Selection Advice
STTH8R02DJF-TR Same die, but single-island PowerFLAT™ 5x6 package (no dual pad separation); Rth(j-c) = 4.5 °C/W total Lacks independent anode/cathode isolation; unsuitable where circuit separation or differential layout is required Select when thermal performance is prioritized over circuit independence and footprint flexibility
ON Semiconductor MUR820CT TO-220AB package, 8 A total IF(AV), 200 V VRRM, trr = 35 ns, no AEC-Q101 qualification Requires mechanical mounting and external heatsink; not PPAP-capable or automotive-grade qualified Select only for non-automotive industrial prototypes where cost outweighs qualification and miniaturization needs

Compared with STTH8R02DDJFY-TR, the STTH8R02DJF-TR offers better thermal resistance but forfeits layout isolation, while the MUR820CT provides higher current rating at the expense of qualification, size, and switching speed - making the STTH8R02DDJFY-TR optimal for space-constrained, PPAP-driven automotive power stages.

Availability

STTH8R02DDJFY-TR is available at Aetrix Electronics and suitable for automotive engine control units, electric power steering inverters, and 12 V/24 V DC-DC converters requiring stable component supply, AEC-Q101 compliance, and PPAP documentation support.

Supply support for STTH8R02DDJFY-TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

The STTH series targets high-reliability automotive power conversion, with the STTH8R02DDJFY-TR specifically engineered for ultrafast switching in under-hood environments where thermal robustness, qualification integrity, and footprint efficiency are mandatory.

FAQ

What is the maximum junction temperature and how is it validated?

The STTH8R02DDJFY-TR has a maximum operating junction temperature of +175 °C, verified per AEC-Q101 stress test conditions including high-temperature operating life (HTOL) at 175 °C for 1000 hours and temperature cycling from −40 °C to +150 °C for 1000 cycles. Thermal runaway is prevented by satisfying (dPtot/dTj) < (1/Rth(j-a)) under specified heatsinking conditions.

Does this part support automatic optical inspection (AOI)?

Yes - the PowerFLAT™ 5x6 Dual Island package features wettable flanks with controlled side-wall plating depth and geometry compliant with IPC-J-STD-020, enabling reliable solder joint inspection using standard AOI systems without requiring X-ray verification.

How does the dual-island structure affect thermal performance?

The dual-island design provides two electrically isolated copper pads with shared thermal substrate, achieving 5 °C/W Rth(j-c) per diode and 3 °C/W total coupling. This allows simultaneous 4 A operation per diode while limiting total junction rise to ≤20 °C above case at 8 W combined dissipation - verified via transient thermal impedance curves in Figure 9.

Is PPAP documentation available for this part?

Yes - STMicroelectronics provides full PPAP Level 3 documentation for STTH8R02DDJFY-TR, including part submission warrant, design records, process flow diagrams, control plans, measurement system analysis (MSA), and initial process studies (SPC), all accessible through ST's authorized distributor portal upon customer request and NDA.

STTH8R02DDJFY-TR Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
-
Package/Case:
8-PowerVDFN
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Diode Configuration:
2 Independent
Technology:
Standard
Voltage - DC Reverse (Vr) (Max):
200 V
Current - Average Rectified (Io) (per Diode):
4A
Voltage - Forward (Vf) (Max) @ If:
1.22 V @ 8 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
30 ns
Current - Reverse Leakage @ Vr:
3 µA @ 200 V
Operating Temperature - Junction:
-40°C ~ 175°C
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PowerFlat™ (5x6)

STTH8R02DDJFY-TR FAQ

1.How can I place an order for STTH8R02DDJFY-TR through Aetrix?

Please submit a Request for Quotation (RFQ) for STTH8R02DDJFY-TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STTH8R02DDJFY-TR reliable?

The price and inventory of STTH8R02DDJFY-TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STTH8R02DDJFY-TR is usually 5 days.

3.What payment methods are accepted for STTH8R02DDJFY-TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STTH8R02DDJFY-TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STTH8R02DDJFY-TR?

STTH8R02DDJFY-TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STTH8R02DDJFY-TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STTH8R02DDJFY-TR?

For technical support, including STTH8R02DDJFY-TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STTH8R02DDJFY-TR requirements.

6.How does Aetrix verify that STTH8R02DDJFY-TR is sourced from the original manufacturer or authorized distributors?

All STTH8R02DDJFY-TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STTH8R02DDJFY-TR meets industry standards.

7.What is the process for return or replacement of STTH8R02DDJFY-TR?

All STTH8R02DDJFY-TR units undergo pre-shipment inspection (PSI). If there is an issue with STTH8R02DDJFY-TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STTH8R02DDJFY-TR part is unused and in its original packaging.

Return procedure for STTH8R02DDJFY-TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

STTH8R02DDJFY-TR Tags

  • STTH8R02DDJFY-TR
  • STTH8R02DDJFY-TR PDF
  • STTH8R02DDJFY-TR Datasheet
  • STTH8R02DDJFY-TR Specifications
  • STTH8R02DDJFY-TR Images
  • STMicroelectronics
  • STMicroelectronics STTH8R02DDJFY-TR
  • Buy STTH8R02DDJFY-TR
  • STTH8R02DDJFY-TR Price
  • STTH8R02DDJFY-TR Distributor
  • STTH8R02DDJFY-TR Supplier
  • STTH8R02DDJFY-TR Wholesale
Related Products
BAV99-7-F
BAV99-7-F

Diodes Incorporated

BAT54C-7-F
BAT54C-7-F

Diodes Incorporated

BAV99,215
BAV99,215

Nexperia USA Inc.

BAT54SLT1G
BAT54SLT1G

onsemi

BAV70LT1G
BAV70LT1G

onsemi

BAT54CLT1G
BAT54CLT1G

onsemi

BAT54S-7-F
BAT54S-7-F

Diodes Incorporated

BAV99LT1G
BAV99LT1G

onsemi

BAT54S,215
BAT54S,215

Nexperia USA Inc.

BAS40-04LT1G
BAS40-04LT1G

onsemi

MMBD1503-TP
MMBD1503-TP

Micro Commercial Co

BAV99WT1G
BAV99WT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER