STMicroelectronics STTH8R03DJF-TR

Overview

STTH8R03DJF-TR from STMicroelectronics is an ultrafast recovery silicon diode optimized for high-frequency DC/DC converters, featuring 300 V repetitive peak reverse voltage, 8 A average forward current, 27 ns typical reverse recovery time, 0.8 V typical forward voltage at 25 °C, and operation up to 175 °C junction temperature. It serves as a switching diode in telecom power supplies and low-voltage inverters.

For engineers reviewing the STTH8R03DJF-TR datasheet, STTH8R03DJF-TR pinout, STTH8R03DJF-TR application, or STTH8R03DJF-TR equivalent, key selection criteria include ultrafast recovery (trr = 27 ns), low conduction loss (VF = 0.8 V typ.), high surge capability (IFSM = 280 A), thermal robustness (Tj(max) = 175 °C), and PowerFLAT 5x6 thin-package integration for high-power-density SMPS designs.

Technical Context

This diode employs a planar epitaxial structure with soft-recovery characteristics (Sfactor = 0.3 typ.) to minimize EMI in high-dI/dt switching environments. Its 27 ns trr and 120 nC Qrr are measured under standardized conditions (IF = 1 A, VR = 30 V, dIF/dt = 100 A/µs), enabling efficient operation in 100–500 kHz DC/DC topologies.

The PowerFLAT 5x6 package delivers 2.0 °C/W junction-to-case thermal resistance and supports conduction cooling via PCB copper area. Its 1 mm profile and ECOPACK2 compliance meet space-constrained, thermally demanding telecom and industrial power applications.

Key Specifications

Pinout & Package

STTH8R03DJF-TR uses the PowerFLAT 5x6 surface-mount package (1.0 mm max height, 5.4 × 6.35 mm footprint), with exposed cathode pad for thermal and electrical connection. The device has two terminals: Anode and Cathode.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast recovery diode applications.

Compared with MUR830E and VS-8EWH03FN-M3, STTH8R03DJF-TR offers the best balance of ultrafast recovery (27 ns), lowest VF (0.8 V), soft switching (Sfactor = 0.3), and proven thermal performance (2.0 °C/W) in a widely adopted PowerFLAT 5x6 footprint-making it optimal for high-reliability, high-density telecom and industrial DC/DC designs.

Availability

STTH8R03DJF-TR is available at Aetrix Electronics and suitable for telecom power supplies, server VRMs, industrial DC/DC converters, and automotive OBC auxiliary supplies requiring stable component supply, long lifecycle support, and consistent parametric performance across production batches.

Supply support for STTH8R03DJF-TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

The STTH series targets high-efficiency power conversion, with STTH8R03DJF-TR specifically engineered for ultrafast, low-loss rectification in high-frequency, high-reliability DC/DC applications where thermal density and EMI control are critical.

FAQ

What is the maximum allowable case temperature for continuous 8 A operation?

The datasheet specifies IF(AV) = 8 A at TC = 155 °C with δ = 0.5 square wave. At TC = 125 °C, derated average current is approximately 6.2 A. Operation at 8 A requires thermal design ensuring case temperature does not exceed 155 °C, typically achieved with ≥3 cm² 2-oz copper and minimal thermal interface resistance.

Does STTH8R03DJF-TR support synchronous rectification drive schemes?

No-it is a passive diode and cannot be actively controlled. However, its soft recovery (Sfactor = 0.3) and low Qrr (120 nC) make it ideal as a freewheeling or clamping diode alongside actively driven MOSFETs or GaN FETs in synchronous topologies, minimizing voltage overshoot during dead-time transitions.

How does the PowerFLAT 5x6 package affect PCB layout for thermal performance?

The exposed cathode pad must be soldered to a minimum 3 cm² copper pour (2 oz/ft²) with ≥4 thermal vias (0.3 mm diameter, spaced ≤2 mm apart) to achieve the rated 2.0 °C/W Rth(j-c). Avoid solder mask over the pad and ensure stencil aperture matches the 4.45 × 3.70 mm cathode land pattern per DS8873 Figure 14.

Is STTH8R03DJF-TR suitable for use in automotive powertrain applications?

While AEC-Q101 qualified versions exist in the STTH family (e.g., STTH8R03DJF-TR-A), this specific part number is not AEC-Q101 certified. It is approved for automotive *auxiliary* systems (e.g., OBC auxiliary supply) per manufacturer documentation, but not for safety-critical powertrain functions requiring full AEC-Q101 qualification.