STMicroelectronics STTH8R06DIRG

Overview

STTH8R06DIRG from STMicroelectronics is a 600 V, 8 A ultrafast high-voltage rectifier diode in TO-220AC insulated package, optimized for continuous-conduction-mode (CCM) PFC boost stages and hard-switching SMPS applications. It delivers typ. 1.4 V forward voltage at 125 °C, 25 ns max reverse recovery time, and 5.5 A peak reverse recovery current under 400 V/−200 A/µs conditions.

For engineers reviewing the STTH8R06DIRG datasheet, STTH8R06DIRG pinout, STTH8R06DIRG application, or STTH8R06DIRG equivalent, key selection criteria include junction-to-case thermal resistance (3.8 °C/W), 2500 VRMS insulation rating, softness factor (0.3), and conduction loss equation (P = 1.16 × IF(AV) + 0.08 × IF²(RMS)).

Technical Context

The STTH8R06DIRG employs ST's Turbo 2 silicon technology to achieve ultrafast switching with low Qrr (150 nC) and controlled soft recovery (S factor = 0.3), minimizing EMI and voltage overshoot in high-frequency PFC circuits. Its 175 °C max junction temperature and low Rth(j-c) support high-power density designs.

Designed specifically for CCM boost diodes, it operates under high dIF/dt stress (up to −200 A/µs) while maintaining stable trr (25–45 ns) and IRM (5.5–7.2 A) across temperature. The TO-220AC insulated package provides 2500 VRMS isolation between tab and leads, enabling direct heatsink mounting without insulating washers.

Key Specifications

Pinout & Package

STTH8R06DIRG uses the TO-220AC insulated package: three-terminal through-hole device with electrically isolated metal tab (2500 VRMS isolation), intended for direct heatsink mounting. The case serves as the cathode terminal.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast high-voltage rectifier applications.

Compared with STTH8R06D, STTH8R06DIRG trades 1.6 °C/W higher thermal resistance for guaranteed 2500 VRMS isolation-critical for safety-certified systems-while matching all electrical specs. Versus MUR860E, it offers faster recovery and documented softness, enabling cleaner switching in SiC-based PFC designs.

Availability

STTH8R06DIRG is available at Aetrix Electronics and suitable for server power supplies, industrial AC-DC front-ends, and EV on-board chargers requiring stable component supply, long-lifecycle assurance, and certified high-voltage isolation.

Supply support for STTH8R06DIRG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, power, microcontroller, and sensor solutions for industrial, automotive, and consumer markets.

The STTH8R06 belongs to ST's Turbo 2 ultrafast diode product line, engineered specifically for high-efficiency, high-frequency PFC and SMPS applications demanding low Qrr, soft recovery, and robust thermal performance.

FAQ

What is the maximum allowable case temperature for continuous 8 A operation?

The STTH8R06DIRG is rated for IF(AV) = 8 A at Tc = 100 °C per Table 2. Exceeding 100 °C case temperature requires derating per the thermal curve in Figure 13; operation above 100 °C risks exceeding 175 °C junction limit unless heatsink thermal resistance is reduced accordingly.

Does the insulated TO-220AC package eliminate the need for thermal interface material?

No-the insulated package provides electrical isolation only; thermal interface material (e.g., silicone grease or phase-change pad) remains essential between the metal tab and heatsink to minimize thermal resistance. The 3.8 °C/W Rth(j-c) assumes optimal thermal contact.

How does the softness factor of 0.3 impact system-level EMI?

A softness factor of 0.3 indicates highly controlled di/dt during reverse recovery, resulting in smoother current zero-crossing and reduced high-frequency spectral content. This lowers conducted EMI in the 30–100 MHz band and decreases voltage overshoot across switching devices by up to 30% compared to harder-recovery diodes.

Can STTH8R06DIRG replace STTH8R06FP in the same footprint?

No-STTH8R06FP uses TO-220FPAC (full-pack) package with different lead spacing, body height, and thermal pad layout. While both are TO-220 variants, mechanical incompatibility prevents direct footprint substitution; PCB redesign is required for package interchange.