My Inquiry
My Account
Vishay General Semiconductor - Diodes Division T15B33AHM3/I
- Part No.:
- T15B33AHM3/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
T15B33AHM3/I.pdf
- Description:
- 1500 W UNI-DIRECTIONAL TVS IN SM
- Quantity:
- Payment:
- Shipping:
Inventory:3,190
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
T15B33AHM3/I from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor (TVS) designed for automotive-grade overvoltage protection of sensitive electronics. It delivers 1500 W peak pulse power (10/1000 μs), clamps at 45.7 V under 33.9 A surge, and operates with 31.4–34.7 V breakdown voltage at 1 mA test current. Its SMB (DO-214AA) package supports high-reliability protection of MOSFETs, ICs, and sensor signal lines in engine control units and ADAS modules.
For engineers reviewing the T15B33AHM3/I datasheet, T15B33AHM3/I pinout, T15B33AHM3/I application, or T15B33AHM3/I equivalent, key selection criteria include its AEC-Q101 qualification, 185 °C junction rating, 28.2 V stand-off voltage, <1.0 μA reverse leakage at VWM, and MSL Level 1 moisture sensitivity - all critical for under-hood automotive designs requiring long-term thermal stability and lightning/inductive-switching immunity.
Technical Context
The T15B33AHM3/I employs passivated anisotropic rectifier technology to achieve fast response time and stable clamping performance across temperature. Its unidirectional architecture enables precise reverse-biased protection of DC rails and signal paths without forward conduction interference.
Rated for TJ = –65 °C to +185 °C operation, it maintains specified VBR (31.4–34.7 V) and VC (45.7 V) under derated conditions per Figure 2, and meets IEC 61000-4-2 ±30 kV ESD immunity (contact/air discharge). The device is qualified to AEC-Q101 and features halogen-free, RoHS-compliant construction with matte tin-plated leads.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/typ/max) | 31.4 / 33.0 / 34.7 V at 1 mA - defines reliable turn-on threshold for overvoltage triggering |
| VWM | 28.2 V - maximum continuous working voltage before leakage exceeds 1.0 μA |
| VC @ IPPM | 45.7 V at 33.9 A - clamping voltage limiting protected circuit stress during 10/1000 μs transients |
| PPPM | 1500 W - peak pulse power handling capability per standard 10/1000 μs waveform |
| TJ max | +185 °C - enables placement near high-temperature sources (e.g., powertrain ECUs) |
| ESD Rating | ±30 kV per IEC 61000-4-2 - protects against human-body-model and contact-discharge events |
| MSL Level | Level 1 (260 °C peak reflow) - supports standard SMT assembly without dry-pack requirements |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, cathode indicated by color band. Dimensions: 4.57 × 3.94 × 2.20 mm (L × W × H); recommended pad layout per Vishay outline drawing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Cathode (banded end) | Transient current sink | Connected to protected line; conducts surge current to ground when VBR exceeded |
| Anode | Reference/return path | Typically tied to system ground or low-impedance return plane for clamping action |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated reliability for automotive electronics including powertrain and chassis systems |
| 185 °C junction rating | Enables direct mounting on hot PCB areas without thermal derating penalties |
| 1500 W peak pulse power | Withstands high-energy transients from load-dump or inductive switching in 12 V/24 V systems |
| MSL Level 1 compliance | Eliminates pre-bake requirements and simplifies manufacturing flow for high-volume SMT |
| Halogen-free & RoHS | Meets global environmental regulations and supports green supply chain compliance |
Applications
| Automotive Engine Control Unit (ECU) | ADAS Camera Signal Line Protection |
|---|---|
Use Scenario: Protects microcontroller I/O and CAN transceiver power rails from load-dump spikes and alternator ripple in gasoline/diesel powertrain systems. IC Role / Device Role: Unidirectional TVS placed between 12 V supply and ground, clamping transients above 28.2 V. Use Value: Prevents latch-up or permanent damage to 3.3 V/5 V logic circuits during ISO 7637-2 Pulse 5a events with no added series impedance. | Use Scenario: Shields LVDS or FPD-Link III video signal pairs in surround-view cameras from ESD and cable discharge events. IC Role / Device Role: Low-capacitance TVS mounted differential-to-ground on each signal line, leveraging fast response to limit voltage overshoot. Use Value: Maintains signal integrity below 45.7 V clamping while meeting ±30 kV IEC 61000-4-2 without degrading 1+ Gbps data rates. |
| Industrial Motor Drive Gate Driver Supply | EV Battery Management System (BMS) Sensor Interface |
Use Scenario: Safeguards isolated gate driver bias supplies against cross-conduction-induced voltage spikes during IGBT/MOSFET switching. IC Role / Device Role: TVS connected across secondary-side 15 V rail, absorbing repetitive 10/1000 μs surges up to 1500 W. Use Value: Extends gate driver IC lifetime by limiting transient overvoltage to <45.7 V, avoiding internal regulator failure or bootstrap capacitor overstress. | Use Scenario: Protects thermistor and voltage-sense inputs in high-voltage BMS modules exposed to battery pack transients and grounding faults. IC Role / Device Role: Unidirectional TVS on each analog input, referenced to isolated BMS ground, rated for 28.2 V operating voltage. Use Value: Ensures measurement accuracy remains intact after ±30 kV ESD events, with <1.0 μA leakage preserving low-power sleep mode current budgets. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ33A | Same SMB package, 33 V VWM, but lower PPPM = 600 W and non-AEC-Q101 rated | Not qualified for automotive under-hood use; suitable only for commercial/industrial ambient ≤125 °C | Select when cost sensitivity outweighs AEC-Q101 and 185 °C requirements |
| 1.5SMC33A | Higher PPPM = 1500 W, same VBR range, but DO-214AB (SMC) package - 7.11 × 6.22 mm vs. SMB's 4.57 × 3.94 mm | Larger footprint limits routing density; less suitable for space-constrained ADAS camera modules | Choose when board area permits larger package and higher surge margin is prioritized over miniaturization |
Compared with SMBJ33A and 1.5SMC33A, the T15B33AHM3/I uniquely combines AEC-Q101 qualification, 185 °C operation, and SMB footprint - enabling compact, high-temperature automotive designs where reliability, size, and thermal resilience are jointly constrained.
Availability
T15B33AHM3/I is available at Aetrix Electronics and suitable for automotive engine control units, ADAS camera modules, industrial motor drives, and EV battery management systems requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for T15B33AHM3/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on reliability, efficiency, and application-specific optimization.
The T15B33AHM3/I belongs to Vishay's PAR® family of high-power surface-mount TVS diodes, engineered specifically for automotive and industrial environments demanding robust transient immunity, high-temperature operation, and AEC-Q101 validation.
FAQ
What is the maximum clamping voltage of the T15B33AHM3/I under peak surge conditions?
The T15B33AHM3/I has a maximum clamping voltage (VC) of 45.7 V when subjected to its rated peak pulse current of 33.9 A using the standard 10/1000 μs waveform. This value is measured per Figure 1 and Table on page 2 of the Vishay datasheet 98360, and ensures protected downstream components remain within safe voltage limits during high-energy transients such as load dump or inductive switching events.
Is the T15B33AHM3/I suitable for automotive under-hood applications?
Yes, the T15B33AHM3/I is explicitly qualified to AEC-Q101 and rated for continuous operation from –65 °C to +185 °C junction temperature, making it suitable for under-hood automotive applications including engine control units, transmission control modules, and ADAS sensor housings. Its halogen-free, RoHS-compliant construction and MSL Level 1 rating further support high-reliability automotive manufacturing requirements.
What does the "HM3" suffix indicate in T15B33AHM3/I?
"HM3" denotes Vishay's halogen-free, RoHS-compliant, AEC-Q101-qualified variant with matte tin-plated leads that meet J-STD-002 solderability and JESD 22-B102 whisker resistance (Class 2). The "I" suffix specifies packaging in 13-inch tape-and-reel format with 3200 units per reel - distinct from the "H" suffix (7-inch reel, 750 units).
How does the T15B33AHM3/I compare to standard SMBJ-series TVS diodes?
The T15B33AHM3/I offers identical 33 V nominal breakdown and SMB package compatibility but provides higher peak pulse power (1500 W vs. 600 W for SMBJ33A), AEC-Q101 qualification, 185 °C junction rating, and enhanced thermal stability. These attributes make the T15B33AHM3/I appropriate for demanding automotive applications where SMBJ33A would require derating or fail qualification testing.
What is the reverse leakage current specification for the T15B33AHM3/I at its stand-off voltage?
At its stand-off voltage (VWM) of 28.2 V and ambient temperature of 25 °C, the T15B33AHM3/I exhibits a maximum reverse leakage current (IR) of 1.0 μA. At elevated junction temperature (TJ = 150 °C), the leakage remains ≤10.0 μA - a critical parameter ensuring minimal power loss and signal integrity in always-on automotive sensor interfaces.
T15B33AHM3/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 28.2V
- Voltage - Breakdown (Min):
- 31.4V
- Voltage - Clamping (Max) @ Ipp:
- 45.7V
- Current - Peak Pulse (10/1000µs):
- 33.9A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 185°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
T15B33AHM3/I FAQ
1.How can I place an order for T15B33AHM3/I through Aetrix?
Please submit a Request for Quotation (RFQ) for T15B33AHM3/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for T15B33AHM3/I reliable?
The price and inventory of T15B33AHM3/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for T15B33AHM3/I is usually 5 days.
3.What payment methods are accepted for T15B33AHM3/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for T15B33AHM3/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for T15B33AHM3/I?
T15B33AHM3/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your T15B33AHM3/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for T15B33AHM3/I?
For technical support, including T15B33AHM3/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your T15B33AHM3/I requirements.
6.How does Aetrix verify that T15B33AHM3/I is sourced from the original manufacturer or authorized distributors?
All T15B33AHM3/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that T15B33AHM3/I meets industry standards.
7.What is the process for return or replacement of T15B33AHM3/I?
All T15B33AHM3/I units undergo pre-shipment inspection (PSI). If there is an issue with T15B33AHM3/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The T15B33AHM3/I part is unused and in its original packaging.
Return procedure for T15B33AHM3/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
T15B33AHM3/I Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
