Vishay General Semiconductor - Diodes Division T15B51AHM3/I
- Part No.:
- T15B51AHM3/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
T15B51AHM3/I.pdf
- Description:
- 1500 W UNI-DIRECTIONAL TVS IN SM
- Quantity:
- Payment:

- Shipping:

Inventory:3,180
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
T15B51AHM3/I from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor (TVS) designed for high-reliability automotive and industrial electronics protection. It delivers 1500 W peak pulse power (10/1000 μs), clamps at 70.1 V under 22.1 A surge, and operates up to 185 °C junction temperature in SMB (DO-214AA) package. Used to safeguard MOSFETs, sensor signal lines, and ICs against lightning-induced transients and inductive switching spikes.
For engineers reviewing the T15B51AHM3/I datasheet, T15B51AHM3/I pinout, T15B51AHM3/I application, or T15B51AHM3/I equivalent, key selection criteria include its 43.6 V stand-off voltage, 48.5–53.6 V breakdown range, AEC-Q101 qualification, MSL Level 1 rating, and 30 kV IEC 61000-4-2 ESD immunity - all critical for robust automotive-grade transient suppression.
Technical Context
This TVS diode employs passivated anisotropic rectifier technology with optimized junction passivation for stable clamping performance across temperature. Its unidirectional configuration enables precise reverse-biased overvoltage protection on DC power rails and signal paths where polarity is fixed.
Rated for TJ = −65 °C to +185 °C and qualified per AEC-Q101, it supports automotive under-hood and ADAS subsystems requiring long-term reliability under thermal stress. The 10/1000 μs waveform rating reflects real-world surge events such as load dump and ISO 7637-2 pulses.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 43.6 V - Maximum continuous reverse operating voltage before leakage exceeds 1 μA; sets upper limit for safe DC bias in protected circuit. |
| VBR (min/typ/max) | 48.5 / 51.0 / 53.6 V - Breakdown occurs within this range at 1 mA test current; defines onset of clamping action. |
| VC @ IPPM | 70.1 V - Clamped voltage during 22.1 A 10/1000 μs surge; determines maximum stress imposed on downstream components. |
| PPPM | 1500 W - Peak pulse power handling capability; validates suitability for severe transient environments like automotive load dump. |
| TJ max | +185 °C - Enables operation in high-temperature zones (e.g., engine control units) without derating or failure. |
| ESD immunity | 30 kV contact/air (IEC 61000-4-2) - Ensures resilience against human-body-model and system-level electrostatic discharge events. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, halogen-free, RoHS-compliant, matte tin-plated leads, MSL Level 1 (260 °C peak reflow).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Cathode (banded end) | Surge current sink | Connected to protected line; conducts transient energy to ground when voltage exceeds VBR. |
| Anode | Reference/ground return | Typically tied to system ground or low-impedance return path; completes clamping loop during overvoltage event. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive use including temperature cycling, humidity, and mechanical shock per JESD47 requirements. |
| 185 °C junction rating | Supports placement near heat sources (e.g., power converters) without thermal derating or lifetime degradation. |
| 1500 W 10/1000 μs pulse power | Handles high-energy transients common in 12 V/24 V vehicle electrical systems and industrial motor drives. |
| 30 kV ESD immunity | Eliminates need for additional ESD protection stages in sensor interfaces and communication ports. |
Applications
| Automotive Power Rail Protection | Industrial Sensor Signal Line Protection |
|---|---|
Use Scenario: Protecting 48 V battery management system (BMS) input rails from load dump transients per ISO 7637-2 Pulse 5a. IC Role / Device Role / Timing Role: Unidirectional TVS placed between rail and ground to clamp surges above 43.6 V. Use Value: Limits peak voltage to 70.1 V during 22.1 A surge, preventing damage to upstream DC/DC controllers and monitoring ICs. | Use Scenario: Shielding analog output lines of pressure sensors in hydraulic control valves from ESD and switching noise. IC Role / Device Role / Timing Role: Low-capacitance TVS connected across signal and ground to absorb fast transients without distorting mV-level signals. Use Value: Maintains signal integrity with <1 μA leakage at 43.6 V and 30 kV ESD immunity per IEC 61000-4-2. |
| ADAS Camera Module Power Input | Motor Drive Gate Driver Supply Protection |
Use Scenario: Securing 12 V input to CMOS image sensor modules exposed to ignition noise and alternator ripple. IC Role / Device Role / Timing Role: Primary overvoltage clamp on camera module's main power rail, positioned upstream of LDO regulators. Use Value: Withstands repeated 1500 W surges and operates reliably at 185 °C ambient, ensuring uptime in engine bay mounting. | Use Scenario: Guarding isolated gate driver supply (e.g., 15 V rail) in BLDC motor inverters against shoot-through-induced transients. IC Role / Device Role / Timing Role: Fast-response TVS suppressing sub-microsecond spikes generated by high-di/dt switching. Use Value: Clamps within nanoseconds to ≤70.1 V, preventing false triggering or latch-up in high-side gate drivers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ51A-E3/52 (Vishay) | Same SMB package, 51 V VBR, but rated for 600 W PPPM and not AEC-Q101 qualified. | Limited to commercial/industrial use; lacks automotive qualification and high-temperature margin. | Select when cost sensitivity outweighs AEC-Q101 and 185 °C requirements. |
| 1.5SMC51A (ON Semiconductor) | Same 51 V VBR, 1500 W rating, SMB package, but only rated to 175 °C TJ and not AEC-Q101 qualified. | Acceptable for non-automotive industrial controls but unsuitable for under-hood deployment. | Choose for legacy designs where 10 °C lower max junction temperature is acceptable. |
Compared with SMBJ51A-E3/52 and 1.5SMC51A, the T15B51AHM3/I provides verified AEC-Q101 compliance, +185 °C operation, and identical 51 V breakdown - making it the only option qualified for next-generation automotive power electronics requiring extended thermal and reliability margins.
Availability
T15B51AHM3/I is available at Aetrix Electronics and suitable for automotive power rail protection, industrial sensor interface hardening, and ADAS camera module design requiring stable component supply and long-term lifecycle support.
Supply support for T15B51AHM3/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific optimization.
The T15B51AHM3/I belongs to Vishay's PAR® family of high-power TVS diodes engineered specifically for automotive-grade transient suppression - combining high-temperature stability, AEC-Q101 validation, and industry-leading surge robustness in compact SMB packages.
FAQ
What is the maximum clamping voltage of the T15B51AHM3/I during a 10/1000 μs surge?
The T15B51AHM3/I clamps to a maximum of 70.1 V when subjected to its rated peak pulse current of 22.1 A under a 10/1000 μs waveform. This value is measured per standard test conditions in the Vishay datasheet (Document Number: 98360) and defines the upper voltage limit imposed on protected circuitry during worst-case transient events. Designers use this parameter to verify that downstream components remain within their absolute maximum ratings.
Is the T15B51AHM3/I qualified for automotive applications?
Yes, the T15B51AHM3/I is fully AEC-Q101 qualified, meeting stress test requirements for temperature cycling, humidity, mechanical shock, and high-temperature operating life. Its 185 °C maximum junction temperature and halogen-free, RoHS-compliant HM3 packaging further align with automotive manufacturing and environmental standards. This makes the T15B51AHM3/I suitable for under-hood, body control, and ADAS applications where reliability is mission-critical.
What does the "HM3" suffix indicate in T15B51AHM3/I?
"HM3" denotes Vishay's high-reliability, halogen-free, RoHS-compliant construction with matte tin-plated leads and JESD201 Class 2 whisker resistance. The "I" suffix specifies packaging in 13-inch diameter plastic tape and reel, with a base quantity of 3200 units. This distinguishes it from the "H" variant (7-inch reel, 750 units) and confirms compliance with automotive and industrial assembly requirements.
How does the T15B51AHM3/I compare to standard SMBJ series TVS diodes?
The T15B51AHM3/I offers identical 51 V breakdown voltage and SMB (DO-214AA) footprint as SMBJ51A variants but adds AEC-Q101 qualification, +185 °C junction rating, and 1500 W pulse power - versus 600 W for most SMBJ parts. Its optimized passivated anisotropic rectifier structure also improves long-term stability under thermal cycling, making the T15B51AHM3/I a direct upgrade path for automotive designs needing higher robustness without PCB layout changes.
What is the reverse leakage current of the T15B51AHM3/I at its stand-off voltage?
At its maximum stand-off voltage of 43.6 V and ambient temperature of 25 °C, the T15B51AHM3/I exhibits a maximum reverse leakage current (IR) of 1.0 μA. At elevated junction temperature (TJ = 150 °C), leakage remains ≤1.0 μA - confirming minimal power loss and no signal interference in always-on circuits. This low leakage supports precision analog and low-power sensor applications where quiescent current budget is constrained.
T15B51AHM3/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 43.6V
- Voltage - Breakdown (Min):
- 48.5V
- Voltage - Clamping (Max) @ Ipp:
- 70.1V
- Current - Peak Pulse (10/1000µs):
- 22.1A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 185°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
T15B51AHM3/I FAQ
1.How can I place an order for T15B51AHM3/I through Aetrix?
Please submit a Request for Quotation (RFQ) for T15B51AHM3/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for T15B51AHM3/I reliable?
The price and inventory of T15B51AHM3/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for T15B51AHM3/I is usually 5 days.
3.What payment methods are accepted for T15B51AHM3/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for T15B51AHM3/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for T15B51AHM3/I?
T15B51AHM3/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your T15B51AHM3/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for T15B51AHM3/I?
For technical support, including T15B51AHM3/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your T15B51AHM3/I requirements.
6.How does Aetrix verify that T15B51AHM3/I is sourced from the original manufacturer or authorized distributors?
All T15B51AHM3/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that T15B51AHM3/I meets industry standards.
7.What is the process for return or replacement of T15B51AHM3/I?
All T15B51AHM3/I units undergo pre-shipment inspection (PSI). If there is an issue with T15B51AHM3/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The T15B51AHM3/I part is unused and in its original packaging.
Return procedure for T15B51AHM3/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
T15B51AHM3/I Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

