Vishay General Semiconductor - Diodes Division T4F10AHM3/I
- Part No.:
- T4F10AHM3/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-219AB
- Datasheet:
-
T4F10AHM3/I.pdf
- Description:
- LOW PROFILE OF 400W PAR TVS PROD
- Quantity:
- Payment:

- Shipping:

Inventory:19,950
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Product details
Overview
T4F10AHM3/I from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in the eSMP® Series, designed for automotive-grade overvoltage protection. It features a 10 V nominal breakdown voltage (VBR), 8.55 V stand-off voltage (VWM), 400 W peak pulse power (10/1000 µs), 185 °C maximum junction temperature, and AEC-Q101 qualification - deployed to protect MOSFETs and sensor signal lines against inductive switching transients.
For engineers reviewing the T4F10AHM3/I datasheet, T4F10AHM3/I pinout, T4F10AHM3/I application, or T4F10AHM3/I equivalent, key selection criteria include clamping voltage (14.5 V at IPPM), low leakage (<5 µA at VWM), SOD-219AB (SMF) package compatibility, and high-temperature reliability for under-hood automotive electronics.
Technical Context
This TVS diode uses passivated anisotropic rectifier technology with junction passivation optimized for stable performance up to 185 °C. Its unidirectional architecture provides precise reverse-biased clamping without forward conduction during normal operation.
It delivers 400 W peak pulse power per 10/1000 µs waveform with a maximum clamping voltage of 14.5 V at rated surge current (27.6 A), and exhibits a low 0.064 %/°C temperature coefficient of VBR, ensuring predictable voltage threshold shift across automotive thermal ranges.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/typ/max) | 9.5 / 10.0 / 10.5 V - defines reliable turn-on threshold for transient suppression |
| VWM | 8.55 V - maximum continuous reverse operating voltage before leakage rises |
| VC @ IPPM | 14.5 V - clamped voltage during 27.6 A surge, limiting stress on protected ICs |
| PPPM | 400 W - peak power handling capability under standardized 10/1000 µs transient |
| TJ max. | 185 °C - enables placement near heat sources in engine control units and ADAS modules |
| AEC-Q101 | Qualified - meets stress test requirements for automotive electronic components |
| Package | SMF (DO-219AB) - low-profile, wave/reflow solderable surface-mount outline |
Pinout & Package
Package: SMF (DO-219AB), 2-terminal surface-mount device with cathode band marking. Dimensions: 3.9 mm × 2.7 mm × 1.3 mm (L × W × H), compatible with standard SOD-123W footprint recommendations.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry terminal during clamping | Connected to protected circuit ground or low-side reference; forms clamp path with cathode |
| Cathode | Current exit terminal during clamping | Marked by color band; connected to line being protected (e.g., sensor supply or signal trace) |
Key Features
| Feature | Design Value |
|---|---|
| High-temperature operation | Rated for continuous use up to 185 °C junction temperature - supports under-hood automotive deployment |
| Low clamping ratio | VC/VBR ≈ 1.45 - minimizes overvoltage overshoot during fast transients |
| AEC-Q101 qualification | Validated for automotive reliability including HTGB, HTRB, and temperature cycling - reduces qualification burden for Tier 1 suppliers |
| Halogen-free & RoHS-compliant | HM3 suffix denotes halogen-free molding compound and compliant plating - meets global environmental compliance mandates |
| MSL Level 1 | Moisture sensitivity level 1 per J-STD-020 - allows unlimited floor life and standard reflow without baking |
Applications
| Automotive Engine Control Unit (ECU) | ADAS Camera Power Line Protection |
|---|---|
Use Scenario: Protects microcontroller I/O and power rails from load-dump and alternator ripple transients in gasoline/diesel engine compartments. IC Role / Device Role / Timing Role: Unidirectional TVS diode providing primary overvoltage clamping on 12 V supply and sensor interface lines. Use Value: Withstands 185 °C ambient and clamps to ≤14.5 V during 27.6 A surges, preventing latch-up or gate oxide damage in protected ASICs. | Use Scenario: Shields image sensor power input and MIPI CSI-2 data lines from ESD and cable discharge events in surround-view camera modules. IC Role / Device Role / Timing Role: Standoff-rated TVS placed directly at connector entry point to shunt fast transients before reaching sensitive analog front-end. Use Value: 8.55 V VWM ensures no interference during normal 9–16 V automotive supply operation while responding within nanoseconds to >1 kV ESD. |
| Electric Power Steering (EPS) Motor Driver | Body Control Module (BCM) LIN Bus Line |
Use Scenario: Guards half-bridge gate drivers and current-sense amplifiers against inductive kickback from brushed or BLDC motor windings. IC Role / Device Role / Timing Role: Fast-response unidirectional suppressor placed across motor phase outputs and low-side sense resistors. Use Value: 400 W pulse rating and 14.5 V clamping limit voltage stress on 20–30 V rated MOSFETs during abrupt current interruption. | Use Scenario: Provides ESD and load-dump immunity on LIN bus physical layer in door modules and seat controllers. IC Role / Device Role / Timing Role: Low-capacitance TVS (typ. <50 pF) integrated into LIN transceiver input/output paths. Use Value: Maintains signal integrity with minimal capacitive loading while meeting ISO 16750-2 pulse 5a/b immunity requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar TVS diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ10A | Higher RthJA (160 °C/W vs. 135 °C/W), same VBR range but lower PPPM (400 W same, but derates faster above 25 °C) | Not AEC-Q101 qualified; intended for commercial/industrial use only | Select when automotive qualification is not required and cost is prioritized over thermal margin |
| 1.5SMC10A | Larger SMC (DO-214AB) package (7.1 × 6.2 mm), higher thermal mass but incompatible with SOD-219AB footprint | Higher surge current rating (32.4 A vs. 27.6 A) but requires PCB redesign | Choose only if board layout allows larger footprint and higher IPPM is critical for extreme surge environments |
Compared with SMAJ10A and 1.5SMC10A, the T4F10AHM3/I uniquely combines AEC-Q101 qualification, SMF package size, and 185 °C junction rating - enabling direct integration into space-constrained, high-temperature automotive modules without derating or requalification.
Availability
T4F10AHM3/I is available at Aetrix Electronics and suitable for automotive engine control units, ADAS camera systems, and electric power steering modules requiring stable component supply across extended temperature and long product lifecycles.
Supply support for T4F10AHM3/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and optoelectronics with emphasis on reliability, efficiency, and application-specific optimization.
The T4F10AHM3/I belongs to Vishay's eSMP® PAR® TVS family, engineered specifically for high-reliability automotive and industrial transient suppression where high-temperature stability, AEC-Q101 compliance, and compact packaging are mandatory.
FAQ
What is the maximum clamping voltage of the T4F10AHM3/I during a 10/1000 µs surge event?
The T4F10AHM3/I has a maximum clamping voltage (VC) of 14.5 V when subjected to its rated peak pulse current of 27.6 A under the standard 10/1000 µs waveform. This value is measured per Figure 3 in the Vishay datasheet 87645 and ensures downstream ICs experience controlled overvoltage stress during transient events. The T4F10AHM3/I maintains this clamping performance across its full operating temperature range.
Is the T4F10AHM3/I suitable for use in automotive under-hood applications?
Yes, the T4F10AHM3/I is explicitly qualified to AEC-Q101 and rated for continuous operation up to 185 °C junction temperature, making it suitable for under-hood automotive applications such as engine control units and transmission control modules. Its SMF (DO-219AB) package supports reflow and wave soldering, and its construction meets MSL Level 1 requirements - all confirmed in Vishay document 87645 revision 14-Feb-2023.
What does the "HM3" suffix indicate in T4F10AHM3/I?
Within the T4F10AHM3/I part number, the "HM3" suffix designates a halogen-free, RoHS-compliant, and AEC-Q101-qualified version with matte tin-plated leads that pass JESD 201 Class 2 whisker testing. It also confirms compliance with JEDEC moisture sensitivity Level 1 and UL 94 V-0 flammability rating - all verified in the official Vishay datasheet 87645.
How does the T4F10AHM3/I compare to standard SMAJ series TVS diodes?
The T4F10AHM3/I offers identical 10 V nominal breakdown and 400 W peak pulse power as SMAJ10A, but differs critically in AEC-Q101 qualification, 185 °C junction rating (vs. 150 °C for SMAJ), and SMF (DO-219AB) package - 30 % smaller than SMA's DO-214AC outline. These distinctions make the T4F10AHM3/I appropriate for next-generation automotive designs where space, temperature, and qualification rigor are non-negotiable.
What is the reverse leakage current specification for T4F10AHM3/I at its stand-off voltage?
At its 8.55 V stand-off voltage (VWM), the T4F10AHM3/I exhibits a maximum reverse leakage current (ID) of 5.0 µA at 25 °C and 20 µA at 150 °C, as specified in Table 1 of Vishay datasheet 87645. This low leakage ensures minimal power loss and signal interference in always-on automotive subsystems, and the T4F10AHM3/I maintains these values across its full rated temperature range.
T4F10AHM3/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-219AB
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 8.55V
- Voltage - Breakdown (Min):
- 9.5V
- Voltage - Clamping (Max) @ Ipp:
- 14.5V
- Current - Peak Pulse (10/1000µs):
- 27.6A
- Power - Peak Pulse:
- 400W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 185°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-219AB (SMF)
T4F10AHM3/I FAQ
1.How can I place an order for T4F10AHM3/I through Aetrix?
Please submit a Request for Quotation (RFQ) for T4F10AHM3/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for T4F10AHM3/I reliable?
The price and inventory of T4F10AHM3/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for T4F10AHM3/I is usually 5 days.
3.What payment methods are accepted for T4F10AHM3/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for T4F10AHM3/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for T4F10AHM3/I?
T4F10AHM3/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your T4F10AHM3/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for T4F10AHM3/I?
For technical support, including T4F10AHM3/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your T4F10AHM3/I requirements.
6.How does Aetrix verify that T4F10AHM3/I is sourced from the original manufacturer or authorized distributors?
All T4F10AHM3/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that T4F10AHM3/I meets industry standards.
7.What is the process for return or replacement of T4F10AHM3/I?
All T4F10AHM3/I units undergo pre-shipment inspection (PSI). If there is an issue with T4F10AHM3/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The T4F10AHM3/I part is unused and in its original packaging.
Return procedure for T4F10AHM3/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
T4F10AHM3/I Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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