Vishay General Semiconductor - Diodes Division T4F13AHM3/H
- Part No.:
- T4F13AHM3/H
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-219AB
- Datasheet:
-
T4F13AHM3/H.pdf
- Description:
- LOW PROFILE OF 400W PAR TVS PROD
- Quantity:
- Payment:

- Shipping:

Inventory:21,000
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Product details
Overview
T4F13AHM3/H from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor in SMF (DO-219AB) package, rated for 13.0 V nominal breakdown voltage (VBR), 11.1 V stand-off voltage (VWM), 400 W peak pulse power (10/1000 μs), and 185 °C maximum junction temperature - designed for automotive-grade overvoltage protection of sensor signal lines and MOSFET gates.
For engineers reviewing the T4F13AHM3/H datasheet, T4F13AHM3/H pinout, T4F13AHM3/H application, or T4F13AHM3/H equivalent, key selection criteria include its AEC-Q101 qualification, TJ = 185 °C capability, 18.2 V clamping voltage at 22.0 A IPPM, unidirectional polarity, and SOD-123W-compatible SMF package footprint.
Technical Context
The T4F13AHM3/H employs passivated anisotropic rectifier technology with junction passivation optimized for high-reliability operation under thermal stress. It delivers stable clamping performance across -65 °C to +185 °C junction temperature range and supports wave and reflow soldering per J-STD-020 MSL level 1 (260 °C peak).
Its electrical behavior follows ANSI/IEEE C62.35 standards, with VBR measured at 1.0 mA IT after 300 μs square-wave pulse. The device exhibits a +0.072 %/°C temperature coefficient of breakdown voltage and achieves 18.2 V clamping at 22.0 A peak pulse current under 10/1000 μs waveform.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (Nom) | 13.0 V - ensures reliable conduction onset above 11.1 V system operating voltage |
| VWM | 11.1 V - maximum continuous reverse voltage before leakage exceeds 1.0 μA at 25 °C |
| VC @ IPPM | 18.2 V - clamps transients to safe levels for downstream 12 V automotive ICs |
| IPPM | 22.0 A - peak surge current handling under standardized 10/1000 μs lightning-induction waveform |
| PPPM | 400 W - transient energy absorption capacity without degradation |
| TJ max | +185 °C - enables use in under-hood automotive environments without derating |
| αT | +0.072 %/°C - predictable VBR drift over temperature for robust design margining |
Pinout & Package
Package: SMF (DO-219AB), low-profile surface-mount case compatible with SOD-123W footprint; matte tin-plated leads, halogen-free, RoHS-compliant, AEC-Q101 qualified; polarity indicated by cathode band.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry terminal during clamping | Connected to protected line (e.g., sensor output); conducts when transient exceeds VBR |
| Cathode | Current exit terminal during clamping | Connected to ground or lower-potential rail; defines unidirectional conduction path |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive electronics with zero defects in accelerated stress testing |
| 185 °C junction rating | Enables direct placement near heat sources (e.g., engine control units) without thermal derating |
| MSL Level 1 rating | Allows standard reflow profiles up to 260 °C peak without moisture-induced damage |
| 400 W peak pulse power | Withstands ISO 7637-2 Pulse 1/2a/5a transients in 12 V vehicle systems |
| Low-profile SMF package | 0.85 mm height enables compact layout in space-constrained ADAS sensor modules |
Applications
| Automotive Sensor Protection | Power Rail Clamping |
|---|---|
Use Scenario: Protecting analog output lines of ABS wheel speed sensors exposed to load-dump and inductive switching transients. IC Role / Device Role / Timing Role: Unidirectional TVS diode placed between sensor output and ECU input to clamp surges below 18.2 V. Use Value: Prevents latch-up or permanent damage to 12 V-rated op-amps and ADC front-ends in automotive ECUs. | Use Scenario: Safeguarding gate drive signals of N-channel MOSFETs controlling solenoid valves in transmission control modules. IC Role / Device Role / Timing Role: Fast-response transient suppressor on gate-to-source path to limit dv/dt-induced turn-on. Use Value: Maintains MOSFET integrity during 100 V/10 ms load-dump events without requiring external RC snubbers. |
| Infotainment Interface Lines | Body Control Module Inputs |
Use Scenario: Shielding LIN bus physical layer inputs in head unit modules from ESD and cable discharge events. IC Role / Device Role / Timing Role: Low-capacitance unidirectional TVS on LIN data line referenced to chassis ground. Use Value: Limits clamping voltage to 18.2 V while maintaining signal integrity up to 20 kbps without distortion. | Use Scenario: Guarding discrete switch inputs (e.g., door lock actuator feedback) against battery reversal and jump-start spikes. IC Role / Device Role / Timing Role: Standoff-rated protector on 12 V input line with 11.1 V VWM to avoid false triggering. Use Value: Blocks reverse polarity up to -12 V and clamps positive transients to 18.2 V, ensuring microcontroller GPIO safety. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ13A-HF | Same VBR (13.0 V), but SMA package (DO-214AC); RthJA = 150 °C/W vs. 135 °C/W for T4F13AHM3/H | Higher thermal resistance limits power handling in confined PCB areas | Select when legacy SMA footprint compatibility is required over thermal performance |
| 1.5SMC13A | Higher PPPM (1500 W), but larger SMC (DO-214AB) package; VC = 21.2 V at 70.1 A | Clamps at higher voltage, reducing margin for 12 V logic interfaces | Prefer for high-energy industrial surge zones where board space allows larger case |
Compared with SMAJ13A-HF and 1.5SMC13A, the T4F13AHM3/H offers superior thermal performance in a smaller footprint and tighter clamping voltage - critical for modern automotive sensor nodes where space, temperature, and signal integrity are constrained.
Availability
T4F13AHM3/H is available at Aetrix Electronics and suitable for automotive sensor protection, body control module inputs, infotainment interface lines, and power rail clamping requiring stable component supply and AEC-Q101 compliance.
Supply support for T4F13AHM3/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, optoelectronics, and passive components for automotive, industrial, and computing markets.
The T4F13AHM3/H belongs to Vishay's eSMP® Series PAR® TVS family, engineered specifically for AEC-Q101-compliant transient suppression in harsh automotive environments with minimal PCB footprint.
FAQ
What is the clamping voltage of the T4F13AHM3/H at its rated peak pulse current?
The T4F13AHM3/H has a maximum clamping voltage (VC) of 18.2 V when subjected to its rated peak pulse current (IPPM) of 22.0 A under a 10/1000 μs waveform. This value is measured per ANSI/IEEE C62.35 and ensures safe operation for 12 V automotive circuits. The T4F13AHM3/H maintains this clamping performance across its full operating temperature range.
Is the T4F13AHM3/H qualified for automotive applications?
Yes, the T4F13AHM3/H is AEC-Q101 qualified and rated for junction temperatures up to +185 °C, making it suitable for under-hood and other high-reliability automotive applications. Its construction meets MSL Level 1 per J-STD-020, and the HM3 suffix confirms halogen-free, RoHS-compliant, and whisker-resistant plating - all verified per Vishay's qualification report for the T4F13AHM3/H.
What package type does the T4F13AHM3/H use, and is it compatible with automated assembly?
The T4F13AHM3/H uses the SMF (DO-219AB) package, a low-profile surface-mount case with 0.85 mm height and SOD-123W-compatible footprint. It is fully compatible with standard wave and reflow soldering processes, including lead-free reflow profiles up to 260 °C peak, and meets J-STD-002 and JESD 22-B102 solderability requirements for automated assembly of the T4F13AHM3/H.
How does the temperature coefficient affect the breakdown voltage of the T4F13AHM3/H?
The T4F13AHM3/H has a typical temperature coefficient (αT) of +0.072 %/°C for its breakdown voltage. This means VBR increases by approximately 0.0094 V per °C rise above 25 °C. For example, at 150 °C, VBR rises to ~13.9 V - a predictable shift used in margining designs that rely on the T4F13AHM3/H for precision clamping.
What is the maximum reverse leakage current of the T4F13AHM3/H at its stand-off voltage?
At its stand-off voltage (VWM) of 11.1 V and ambient temperature of 25 °C, the T4F13AHM3/H exhibits a maximum reverse leakage current (ID) of 1.0 μA. At elevated temperature (TJ = 150 °C), leakage remains ≤ 5.0 μA - low enough to avoid loading sensitive sensor outputs or microcontroller inputs in systems using the T4F13AHM3/H.
T4F13AHM3/H Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-219AB
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 11.1V
- Voltage - Breakdown (Min):
- 12.4V
- Voltage - Clamping (Max) @ Ipp:
- 18.2V
- Current - Peak Pulse (10/1000µs):
- 22A
- Power - Peak Pulse:
- 400W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 185°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-219AB (SMF)
T4F13AHM3/H FAQ
1.How can I place an order for T4F13AHM3/H through Aetrix?
Please submit a Request for Quotation (RFQ) for T4F13AHM3/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for T4F13AHM3/H reliable?
The price and inventory of T4F13AHM3/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for T4F13AHM3/H is usually 5 days.
3.What payment methods are accepted for T4F13AHM3/H?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for T4F13AHM3/H transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for T4F13AHM3/H?
T4F13AHM3/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your T4F13AHM3/H order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for T4F13AHM3/H?
For technical support, including T4F13AHM3/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your T4F13AHM3/H requirements.
6.How does Aetrix verify that T4F13AHM3/H is sourced from the original manufacturer or authorized distributors?
All T4F13AHM3/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that T4F13AHM3/H meets industry standards.
7.What is the process for return or replacement of T4F13AHM3/H?
All T4F13AHM3/H units undergo pre-shipment inspection (PSI). If there is an issue with T4F13AHM3/H, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The T4F13AHM3/H part is unused and in its original packaging.
Return procedure for T4F13AHM3/H:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
T4F13AHM3/H Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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