Vishay General Semiconductor - Diodes Division T4F16AHM3/I
- Part No.:
- T4F16AHM3/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-219AB
- Datasheet:
-
T4F16AHM3/I.pdf
- Description:
- LOW PROFILE OF 400W PAR TVS PROD
- Quantity:
- Payment:

- Shipping:

Inventory:20,000
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Product details
Overview
T4F16AHM3/I from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor (TVS) in the eSMP® Series, designed for automotive-grade circuit protection. It features a 16.0 V nominal breakdown voltage (VBR), 13.6 V stand-off voltage (VWM), 400 W peak pulse power (10/1000 μs), 22.0 V maximum clamping voltage at rated surge current, and AEC-Q101 qualification for under-hood sensor line protection.
For engineers reviewing the T4F16AHM3/I datasheet, T4F16AHM3/I pinout, T4F16AHM3/I application, or T4F16AHM3/I equivalent, key selection criteria include its SMF (DO-219AB) package compatibility, 185 °C junction temperature rating, unidirectional polarity, low leakage (<1.0 μA at VWM), and suitability for high-reliability automotive transients on signal lines.
Technical Context
The T4F16AHM3/I employs passivated anisotropic rectifier technology with junction passivation optimized for high-temperature stability. Its unidirectional architecture provides precise reverse-biased clamping during positive-going transients, with thermal resistance RthJM of 15–18 °C/W enabling robust heat transfer to the PCB mount.
Rated for 10/1000 μs waveform compliance, it delivers 17.8 A peak pulse current (IPPM) while maintaining clamping at ≤22.0 V - critical for protecting 12 V automotive electronics such as CAN transceivers and sensor interfaces against ISO 7637-2 pulses.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (Nom) | 16.0 V - ensures reliable triggering above 13.6 V system stand-off, preventing false clamping during normal operation |
| VC @ IPPM | 22.0 V - limits downstream IC stress to safe levels during 400 W transient events |
| IPPM | 17.8 A - supports robust surge handling per ISO 7637-2 Pulse 1/2a/5a requirements |
| TJ max | 185 °C - enables placement near high-temperature engine control units without derating |
| Package | SMF (DO-219AB) - compact 2.9 mm × 1.3 mm footprint with 0.85 mm height, compatible with automated SMT assembly |
| AEC-Q101 | Qualified - validated for automotive reliability including temperature cycling, HTRB, and ESD per JESD22 standards |
Pinout & Package
Package: SMF (DO-219AB), surface-mount, low-profile case with matte tin-plated leads. Cathode denoted by color band; anode and cathode terminals are located at opposite ends of the molded body.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Input terminal for transient energy absorption path | Connected to protected line (e.g., sensor signal); conducts during reverse-biased overvoltage event |
| Cathode | Reference terminal tied to system ground or return path | Provides low-impedance path to ground for clamped current; marked by visible band on device body |
Key Features
| Feature | Design Value |
|---|---|
| 185 °C junction capability | Enables direct mounting in high-temperature zones (e.g., near ECUs or power modules) without thermal derating penalties |
| MSL Level 1 rating | Allows unlimited floor life and reflow soldering at 260 °C peak, eliminating moisture sensitivity handling constraints |
| 400 W peak pulse power | Meets stringent automotive load-dump and inductive-switching immunity requirements per ISO 16750-2 |
| Low leakage <1.0 μA at VWM | Minimizes standby power loss and avoids interference with high-impedance sensor bias networks |
| Halogen-free, RoHS-compliant HM3 suffix | Supports environmental compliance for global automotive OEM supply chains without performance trade-offs |
Applications
| Automotive Sensor Protection | CAN Bus Line Protection |
|---|---|
Use Scenario: Protecting analog output sensors (e.g., pressure, temperature) from load dump and inductive switching transients in engine compartments. IC Role / Device Role / Timing Role: Unidirectional TVS diode placed between sensor signal line and chassis ground to clamp fast-rising overvoltages. Use Value: Prevents latch-up or permanent damage to 12 V rail-connected sensor front-ends while maintaining <1.0 μA leakage at 13.6 V operating voltage. |
Use Scenario: Safeguarding CAN-H and CAN-L differential pairs against ESD and electrical fast transients in vehicle networking systems. IC Role / Device Role / Timing Role: Discrete TVS pair (one per line) providing bidirectional-like protection via two unidirectional devices referenced to common ground. Use Value: Clamps transients to ≤22.0 V within nanoseconds, preserving signal integrity and meeting ISO 11898-2 EMC immunity thresholds. |
| Body Control Module Inputs | Infotainment System I/O Protection |
Use Scenario: Shielding discrete switch inputs (e.g., door lock, window switch) from relay coil flyback and battery reversal spikes. IC Role / Device Role / Timing Role: Standoff-rated TVS on each input line to absorb 400 W surges without affecting logic-level detection. Use Value: Ensures long-term reliability of microcontroller GPIOs under repeated 10/1000 μs transients up to 17.8 A peak current. |
Use Scenario: Protecting USB, audio, and display interface lines in head units from human-body-model ESD and board-level coupling. IC Role / Device Role / Timing Role: Low-capacitance TVS on high-speed data paths to suppress transients without signal distortion. Use Value: Maintains signal fidelity due to minimal parasitic capacitance and sub-22 V clamping, verified per AEC-Q101 HBM testing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ16A-E3/57T | Same VBR (16.0 V min), but lower PPPM (400 W vs. SMAJ's 400 W), higher VC (26.0 V), and larger SMA package (DO-214AC) | Less suitable for space-constrained automotive modules due to 4.5 mm × 2.7 mm footprint and 2.3 mm height | Select T4F16AHM3/I when board area is limited and 185 °C operation is required; SMAJ16A-E3/57T may be used where thermal margin allows larger package |
| 1.5KE16A | Higher power (1500 W), axial-leaded DO-201 package, no AEC-Q101 qualification, VC = 24.4 V, TJ max = 175 °C | Not suitable for automated SMT production or under-hood automotive environments requiring qualified reliability | Choose T4F16AHM3/I for SMT-compatible, AEC-Q101-compliant designs; 1.5KE16A only for non-automotive, through-hole prototyping |
Compared with SMAJ16A-E3/57T and 1.5KE16A, the T4F16AHM3/I offers superior thermal capability (185 °C vs. 150–175 °C), smaller footprint (SMF vs. SMA/DO-201), and automotive qualification - making it the preferred choice for production-grade automotive electronics where size, reliability, and manufacturability are critical.
Availability
T4F16AHM3/I is available at Aetrix Electronics and suitable for automotive sensor protection, CAN bus line hardening, and body control module input conditioning requiring stable component supply across extended temperature ranges and high-reliability production cycles.
Supply support for T4F16AHM3/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, and optoelectronics for automotive, industrial, and computing markets.
The T4F16AHM3/I belongs to Vishay's eSMP® PAR® TVS family, engineered specifically for AEC-Q101-compliant transient suppression in harsh automotive environments - emphasizing thermal resilience, small form factor, and repeatable clamping performance.
FAQ
What is the clamping voltage of the T4F16AHM3/I at its rated peak pulse current?
The T4F16AHM3/I has a maximum clamping voltage (VC) of 22.0 V when subjected to its rated peak pulse current (IPPM) of 17.8 A under a 10/1000 μs waveform. This value is measured per JEDEC-standard test conditions and ensures downstream components remain within safe operating voltage limits during transient events. The T4F16AHM3/I maintains this clamping performance across its full operating temperature range.
Is the T4F16AHM3/I suitable for use in automotive under-hood applications?
Yes, the T4F16AHM3/I is explicitly qualified to AEC-Q101 and rated for continuous operation up to 185 °C junction temperature - making it suitable for under-hood automotive applications such as engine control units, transmission sensors, and exhaust gas recirculation systems. Its SMF package meets MSL Level 1 and wave/reflow soldering requirements, supporting high-volume automotive manufacturing.
What does the "HM3" suffix indicate in T4F16AHM3/I?
The "HM3" suffix in T4F16AHM3/I denotes halogen-free, RoHS-compliant construction with matte tin-plated leads that pass JESD 201 Class 2 whisker testing. It also confirms AEC-Q101 qualification and compliance with Vishay's material categorization standard (Doc. #99912). The "I" indicates packaging in 13-inch tape-and-reel format with 10,000 units per reel.
How does the T4F16AHM3/I compare to bidirectional TVS diodes in automotive designs?
The T4F16AHM3/I is unidirectional and optimized for DC-biased lines like 12 V sensor outputs or CAN-H/CAN-L referenced to ground. Unlike bidirectional devices, it provides tighter VBR tolerance and lower leakage (<1.0 μA) at VWM, improving noise immunity in precision analog circuits. For true differential protection, two T4F16AHM3/I devices (one per line) are commonly deployed instead of a single bidirectional part.
What is the thermal resistance from junction to mount (RthJM) for the T4F16AHM3/I?
The T4F16AHM3/I has a typical junction-to-mount thermal resistance (RthJM) of 15 °C/W, measured using JEDEC® 51-14 Transient Dual Interface Method. This low value reflects efficient heat conduction from the silicon die through the copper lead frame to the PCB pad, supporting sustained power dissipation in thermally demanding automotive layouts without external heatsinking.
T4F16AHM3/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-219AB
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 13.6V
- Voltage - Breakdown (Min):
- 15.2V
- Voltage - Clamping (Max) @ Ipp:
- 22V
- Current - Peak Pulse (10/1000µs):
- 17.8A
- Power - Peak Pulse:
- 400W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 185°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-219AB (SMF)
T4F16AHM3/I FAQ
1.How can I place an order for T4F16AHM3/I through Aetrix?
Please submit a Request for Quotation (RFQ) for T4F16AHM3/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for T4F16AHM3/I reliable?
The price and inventory of T4F16AHM3/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for T4F16AHM3/I is usually 5 days.
3.What payment methods are accepted for T4F16AHM3/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for T4F16AHM3/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for T4F16AHM3/I?
T4F16AHM3/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your T4F16AHM3/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for T4F16AHM3/I?
For technical support, including T4F16AHM3/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your T4F16AHM3/I requirements.
6.How does Aetrix verify that T4F16AHM3/I is sourced from the original manufacturer or authorized distributors?
All T4F16AHM3/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that T4F16AHM3/I meets industry standards.
7.What is the process for return or replacement of T4F16AHM3/I?
All T4F16AHM3/I units undergo pre-shipment inspection (PSI). If there is an issue with T4F16AHM3/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The T4F16AHM3/I part is unused and in its original packaging.
Return procedure for T4F16AHM3/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
T4F16AHM3/I Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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onsemi

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Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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