Vishay General Semiconductor - Diodes Division T4F18AHM3/I
- Part No.:
- T4F18AHM3/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-219AB
- Datasheet:
-
T4F18AHM3/I.pdf
- Description:
- LOW PROFILE OF 400W PAR TVS PROD
- Quantity:
- Payment:

- Shipping:

Inventory:20,000
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Product details
Overview
T4F18AHM3/I from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor (TVS) in SMF (DO-219AB) package, rated for 18.0 V nominal breakdown voltage (VBR), 15.3 V stand-off voltage (VWM), 400 W peak pulse power (10/1000 µs), and 185 °C maximum junction temperature - designed for automotive-grade overvoltage protection of sensor signal lines and MOSFET gates.
For engineers reviewing the T4F18AHM3/I datasheet, T4F18AHM3/I pinout, T4F18AHM3/I application, or T4F18AHM3/I equivalent, this page delivers verified electrical specs, AEC-Q101 qualification status, clamping performance at 15.9 A IPPM, thermal resistance data, and real-world use cases in high-reliability automotive electronics.
Technical Context
The T4F18AHM3/I employs passivated anisotropic rectifier technology with junction passivation optimized for high-temperature stability. It operates exclusively as a unidirectional TVS diode, delivering precise clamping during transients induced by inductive load switching or ESD events.
Its SMF (DO-219AB) package supports wave and reflow soldering per J-STD-020 MSL level 1 (260 °C peak), and its 185 °C TJ max enables deployment in under-hood automotive environments where thermal derating must be minimized across extended temperature ranges.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/typ/max) | 17.1 / 18.0 / 18.9 V - ensures reliable turn-on above system operating voltage while avoiding false triggering |
| VWM | 15.3 V - defines maximum continuous reverse working voltage before leakage exceeds 1 µA |
| IPPM | 15.9 A - peak surge current capability at 10/1000 µs waveform, directly supporting ISO 7637-2 Pulse 1/2a immunity |
| VC @ IPPM | 25.5 V - clamping voltage limiting downstream IC stress during worst-case transients |
| PPPM | 400 W - peak pulse power handling capacity validated per ANSI/IEEE C62.35 standard |
| TJ max | 185 °C - enables operation in high-ambient automotive zones without thermal shutdown |
| αT | 0.080 %/°C - low temperature coefficient ensures stable VBR across -65 to +185 °C range |
Pinout & Package
Package: SMF (DO-219AB), low-profile surface-mount case with matte tin-plated leads, UL 94 V-0 molding compound, cathode indicated by color band.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry terminal during forward conduction | Connected to ground or low-side reference in unidirectional TVS configuration |
| Cathode | Current exit terminal during clamping | Connected to protected line (e.g., sensor output); color band identifies this terminal |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive electronic systems requiring zero-failure reliability over lifetime |
| Junction passivation | Reduces surface leakage and enhances long-term stability under humidity and thermal cycling |
| MSL Level 1 rating | Enables single-pass reflow without moisture-induced popcorn failure |
| 185 °C TJ capability | Eliminates need for external thermal derating in engine control unit (ECU) and transmission modules |
| 400 W 10/1000 µs rating | Meets stringent ISO 7637-2 and SAE J1113-11 transient immunity requirements |
Applications
| Automotive Sensor Protection | Power Supply Rail Clamping |
|---|---|
Use Scenario: Protecting analog output lines of pressure, temperature, and position sensors in engine bay modules exposed to load dump and inductive kickback. IC Role / Device Role / Timing Role: Unidirectional TVS clamping device placed between sensor output and microcontroller ADC input. Use Value: Limits transient voltage to ≤25.5 V during 15.9 A surges, preserving ADC integrity and preventing latch-up in 3.3 V or 5 V signal chains. | Use Scenario: Safeguarding 12 V automotive power rails feeding infotainment head units and body control modules against battery reversal and alternator load dump. IC Role / Device Role / Timing Role: Standoff-rated TVS connected between rail and ground to clamp transients before LDO regulators. Use Value: Withstands 400 W pulses and maintains <1 µA leakage at 15.3 V, ensuring no standby current penalty while enabling fast response to >100 V spikes. |
| MOSFET Gate Protection | Industrial CAN Bus Line Protection |
Use Scenario: Shielding high-side N-channel MOSFET gates in motor driver circuits from gate oxide damage due to Miller-induced voltage spikes. IC Role / Device Role / Timing Role: Low-capacitance TVS placed between gate and source to clamp dv/dt-induced overshoot. Use Value: Clamps gate-source voltage to ≤25.5 V within nanoseconds, preventing irreversible gate rupture while adding <1 pF parasitic capacitance. | Use Scenario: Adding secondary protection on CAN_H/CAN_L lines in commercial vehicle telematics units subjected to ESD and coupled transients. IC Role / Device Role / Timing Role: Unidirectional TVS on each line referenced to ground, supplementing primary common-mode choke and bus transceiver ESD structure. Use Value: Provides differential-mode clamping margin beyond transceiver's internal protection, extending system-level robustness to ±30 kV contact ESD per IEC 61000-4-2. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ18A | Same VBR range (18.0 V typ), but lower PPPM = 400 W (same rating), higher RthJA = 190 °C/W vs. 135–160 °C/W for T4F18AHM3/I | Less effective thermal management in high-density PCB layouts; not AEC-Q101 qualified | Select when AEC-Q101 compliance is not required and board space allows larger thermal pad |
| 1.5SMC18A | Higher PPPM = 1500 W, but DO-214AB (SMC) package - 3.5× larger footprint and incompatible with SOD-123W land pattern | Over-specified for most automotive signal-line protection; unsuitable for space-constrained modules | Choose only if system-level testing demands >400 W surge margin and layout permits larger case |
Compared with SMAJ18A and 1.5SMC18A, the T4F18AHM3/I delivers superior thermal performance in a compact SMF package, full AEC-Q101 qualification, and optimized clamping for automotive signal integrity - making it the preferred choice for next-generation ECUs and ADAS sensor interfaces where size, reliability, and thermal headroom are critical.
Availability
T4F18AHM3/I is available at Aetrix Electronics and suitable for automotive sensor protection, power rail clamping, and MOSFET gate safeguarding requiring stable component supply, AEC-Q101 traceability, and consistent 18.0 V breakdown performance across production lots.
Supply support for T4F18AHM3/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on high-reliability, high-temperature, and automotive-qualified components.
The T4F18AHM3/I belongs to Vishay's PAR® series of surface-mount TVS diodes, engineered specifically for robust transient suppression in harsh automotive environments - balancing low leakage, tight VBR tolerance, and high-temperature operational stability.
FAQ
What is the exact breakdown voltage tolerance for T4F18AHM3/I?
The T4F18AHM3/I has a guaranteed breakdown voltage range of 17.1 V (min) to 18.9 V (max) at 1.0 mA test current, with 18.0 V nominal. This ±5.6% tolerance ensures predictable clamping onset while maintaining sufficient margin above 15.3 V stand-off voltage to prevent false triggering during normal operation.
Is T4F18AHM3/I compatible with lead-free reflow processes?
Yes, the T4F18AHM3/I is fully compatible with lead-free reflow soldering per J-STD-020, rated MSL Level 1 with a maximum peak temperature of 260 °C. Its matte tin-plated terminals meet JESD 22-B102 solderability requirements, and the package passes JESD 201 Class 2 whisker testing.
Does T4F18AHM3/I meet automotive qualification standards?
Yes, the T4F18AHM3/I is AEC-Q101 qualified - a mandatory requirement for discrete semiconductors used in automotive electronic systems. This qualification covers stress tests including HTGB, HTRB, TCT, and ESD, confirming suitability for under-hood and safety-critical applications.
What is the maximum clamping voltage of T4F18AHM3/I at rated surge current?
The T4F18AHM3/I exhibits a maximum clamping voltage (VC) of 25.5 V at its rated peak pulse current (IPPM) of 15.9 A under 10/1000 µs waveform conditions. This value is measured per ANSI/IEEE C62.35 and defines the upper voltage limit imposed on protected circuitry during worst-case transients.
How does the thermal resistance of T4F18AHM3/I impact PCB layout?
The T4F18AHM3/I has RthJA = 135–160 °C/W (JEDEC 51-2A, FR4, 2 oz Cu), meaning a 1 W steady-state dissipation raises junction temperature by up to 160 °C above ambient. To maintain safe operation below 185 °C TJ, designers must ensure adequate copper area and avoid placing near heat sources - especially in high-ambient automotive zones.
T4F18AHM3/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-219AB
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 15.3V
- Voltage - Breakdown (Min):
- 17.1V
- Voltage - Clamping (Max) @ Ipp:
- 25.5V
- Current - Peak Pulse (10/1000µs):
- 15.9A
- Power - Peak Pulse:
- 400W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 185°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-219AB (SMF)
T4F18AHM3/I FAQ
1.How can I place an order for T4F18AHM3/I through Aetrix?
Please submit a Request for Quotation (RFQ) for T4F18AHM3/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for T4F18AHM3/I reliable?
The price and inventory of T4F18AHM3/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for T4F18AHM3/I is usually 5 days.
3.What payment methods are accepted for T4F18AHM3/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for T4F18AHM3/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for T4F18AHM3/I?
T4F18AHM3/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your T4F18AHM3/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for T4F18AHM3/I?
For technical support, including T4F18AHM3/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your T4F18AHM3/I requirements.
6.How does Aetrix verify that T4F18AHM3/I is sourced from the original manufacturer or authorized distributors?
All T4F18AHM3/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that T4F18AHM3/I meets industry standards.
7.What is the process for return or replacement of T4F18AHM3/I?
All T4F18AHM3/I units undergo pre-shipment inspection (PSI). If there is an issue with T4F18AHM3/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The T4F18AHM3/I part is unused and in its original packaging.
Return procedure for T4F18AHM3/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
T4F18AHM3/I Tags

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Toshiba Semiconductor and Storage

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