Vishay General Semiconductor - Diodes Division T4F20AHM3/H
- Part No.:
- T4F20AHM3/H
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-219AB
- Datasheet:
-
T4F20AHM3/H.pdf
- Description:
- LOW PROFILE OF 400W PAR TVS PROD
- Quantity:
- Payment:

- Shipping:

Inventory:20,050
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Product details
Overview
T4F20AHM3/H from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor in the SMF (DO-219AB) package, rated for 400 W peak pulse power (10/1000 μs), 20.0 V nominal breakdown voltage (VBR), and 27.7 V maximum clamping voltage (VC) at 14.4 A peak surge current - designed for automotive-grade ESD and lightning transient protection of sensor signal lines and MOSFET gates.
For engineers reviewing the T4F20AHM3/H datasheet, T4F20AHM3/H pinout, T4F20AHM3/H application, or T4F20AHM3/H equivalent, key selection criteria include its AEC-Q101 qualification, 185 °C junction temperature rating, low-profile SOD-123W-compatible footprint, and verified clamping performance under repetitive surge stress per IEC 61000-4-5.
Technical Context
The T4F20AHM3/H employs passivated anisotropic rectifier technology with optimized junction passivation to sustain operation up to TJ = 185 °C, meeting stringent automotive reliability requirements. Its unidirectional architecture provides precise reverse-biased clamping without forward conduction during normal operation.
It delivers 400 W peak pulse power handling per 10/1000 μs waveform, with thermal resistance RthJA ≤ 160 °C/W on FR4 PCB and RthJM ≤ 18 °C/W to mounting pad - enabling robust thermal management in high-density automotive control modules.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (Nominal) | 20.0 V - ensures reliable triggering above 17.1 V stand-off voltage while avoiding false trips during system transients. |
| VC @ IPPM | 27.7 V - limits downstream IC voltage stress to safe levels during 14.4 A surge events. |
| PPPM | 400 W - supports IEC 61000-4-5 Level 4 (4 kV) surge immunity in compact layouts. |
| TJ max. | 185 °C - enables deployment in engine bay and transmission control units without derating. |
| Package | SMF (DO-219AB) - 2.9 mm × 1.3 mm footprint compatible with SOD-123W reflow profiles and automated placement. |
| AEC-Q101 | Qualified - validated for automotive electronics per stress test requirements including HTGB, HTRB, and temperature cycling. |
| MSL Level | Level 1 (260 °C peak) - allows standard reflow soldering without moisture sensitivity concerns. |
Pinout & Package
Package: SMF (DO-219AB), low-profile surface-mount case with matte tin-plated leads; polarity indicated by cathode band; compliant with JEDEC DO-219AB outline and UL 94 V-0 molding compound.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry terminal during clamping | Connected to protected line (e.g., sensor output); conducts only during overvoltage events. |
| Cathode | Current exit terminal during clamping | Connected to ground or lower-potential rail; color band identifies this terminal for correct PCB orientation. |
Key Features
| Feature | Design Value |
|---|---|
| High-temperature operation | Rated for continuous use at TJ = 185 °C - eliminates thermal derating in under-hood ECUs. |
| Automotive qualification | AEC-Q101 certified - meets vibration, thermal cycling, and humidity resistance requirements for Tier-1 suppliers. |
| Precision clamping | VBR tolerance ±5 % (19.0–21.0 V) and VC = 27.7 V @ 14.4 A - ensures predictable protection margin across production lots. |
| Halogen-free & RoHS | HM3 suffix denotes halogen-free molding compound and RoHS compliance - satisfies EU and OEM environmental mandates. |
| Reflow compatibility | Rated for 260 °C peak reflow per J-STD-020 MSL Level 1 - supports high-yield SMT assembly without pre-baking. |
Applications
| Automotive Sensor Protection | Power Supply Rail Clamping |
|---|---|
Use Scenario: Protecting analog output lines of pressure, temperature, and position sensors in engine control modules exposed to load dump and inductive switching noise. IC Role / Device Role: Unidirectional TVS diode placed between sensor output and ground to clamp transients before reaching ADC input or signal conditioner. Use Value: Maintains signal integrity below 27.7 V during 14.4 A surges, preventing ADC saturation and microcontroller reset events. | Use Scenario: Safeguarding 12 V/24 V supply rails feeding motor drivers and CAN transceivers against battery reversal and alternator load dump. IC Role / Device Role: Standoff-rated TVS connected across rail-to-ground to absorb energy without affecting steady-state regulation. Use Value: Withstands 400 W pulses without degradation, preserving rail stability and eliminating need for redundant protection stages. |
| MOSFET Gate Protection | Infotainment Interface Lines |
Use Scenario: Shielding high-side and low-side MOSFET gate drivers in electric power steering (EPS) systems from Miller-induced spikes and ESD. IC Role / Device Role: Fast-response TVS placed between gate and source to limit dV/dt stress and prevent unintended turn-on. Use Value: Sub-1 ns response time and 27.7 V clamping ensure gate oxide remains within safe operating area during fast-rising transients. | Use Scenario: Hardening LIN bus and analog audio lines in head units and display modules against ESD and cable discharge events. IC Role / Device Role: Low-capacitance unidirectional suppressor installed inline with signal traces to shunt ESD current to chassis ground. Use Value: 1.0 μA leakage at 17.1 V VWM prevents signal attenuation while providing >15 kV contact ESD immunity per IEC 61000-4-2. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ20A | Higher RthJA (190 °C/W), lower PPPM (400 W same but derates faster above 25 °C), non-AEC-Q101 | Limited to industrial/commercial environments; not qualified for automotive under-hood use | Select when cost sensitivity outweighs AEC-Q101 requirement and ambient temperature stays < 85 °C |
| TPSMD20A | Same VBR (20 V), higher VC (32.4 V), AEC-Q101 qualified, larger SMA package (4.5 mm × 2.7 mm) | Requires PCB layout revision due to 55 % larger footprint; clamps at higher voltage, increasing risk to downstream ICs | Choose only if existing design uses SMA footprint and higher clamping voltage is acceptable |
Compared with SMAJ20A and TPSMD20A, the T4F20AHM3/H uniquely combines AEC-Q101 qualification, 185 °C operation, and minimal 2.9 mm × 1.3 mm SMF footprint - enabling direct integration into space-constrained automotive modules without thermal or qualification compromises.
Availability
T4F20AHM3/H is available at Aetrix Electronics and suitable for automotive sensor protection, power rail clamping, and MOSFET gate safeguarding requiring stable component supply across multi-year vehicle production cycles.
Supply support for T4F20AHM3/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor designs and manufactures discrete semiconductors including diodes, rectifiers, and TVS devices, with emphasis on high-reliability, automotive-qualified components.
The T4F20AHM3/H belongs to Vishay's PAR® series of high-temperature transient voltage suppressors, engineered specifically for harsh-environment automotive electronics where sustained 185 °C operation and AEC-Q101 validation are mandatory.
FAQ
What is the clamping voltage of the T4F20AHM3/H at its rated peak pulse current?
The T4F20AHM3/H has a maximum clamping voltage (VC) of 27.7 V at its rated peak pulse current (IPPM) of 14.4 A, measured using a 10/1000 μs waveform. This value is guaranteed across the full operating temperature range and ensures protected circuits remain within safe voltage margins during surge events. The T4F20AHM3/H maintains this clamping performance with minimal variation due to its passivated anisotropic rectifier structure.
Is the T4F20AHM3/H qualified for automotive applications?
Yes, the T4F20AHM3/H is AEC-Q101 qualified and rated for continuous operation up to 185 °C junction temperature, making it suitable for under-hood and transmission control unit applications. It passes all required stress tests including high-temperature reverse bias (HTRB), high-temperature gate bias (HTGB), and temperature cycling. The T4F20AHM3/H also meets MSL Level 1 per J-STD-020, supporting standard reflow assembly in automotive manufacturing lines.
What package type does the T4F20AHM3/H use, and is it compatible with automated SMT placement?
The T4F20AHM3/H uses the SMF (DO-219AB) package - a low-profile, 2.9 mm × 1.3 mm surface-mount case with matte tin-plated leads. It is fully compatible with automated pick-and-place equipment and standard reflow profiles, including peak temperatures up to 260 °C (MSL Level 1). The T4F20AHM3/H's footprint aligns with SOD-123W land patterns, simplifying migration from legacy packages without PCB redesign.
How does the T4F20AHM3/H compare to other 20 V TVS diodes in terms of thermal performance?
The T4F20AHM3/H achieves RthJM ≤ 18 °C/W to the mounting pad and RthJA ≤ 160 °C/W on FR4, outperforming many industry-standard 20 V TVS diodes like SMAJ20A (RthJA ≈ 190 °C/W). This superior thermal resistance allows the T4F20AHM3/H to sustain higher average power dissipation in confined spaces, such as densely packed automotive ECUs. Its junction passivation design further stabilizes VBR drift over temperature, ensuring consistent clamping behavior.
What is the maximum reverse leakage current of the T4F20AHM3/H at its stand-off voltage?
At its 17.1 V stand-off voltage (VWM), the T4F20AHM3/H exhibits a maximum reverse leakage current (ID) of 1.0 μA at 25 °C and 5.0 μA at 150 °C. This ultra-low leakage preserves signal integrity in high-impedance sensor interfaces and prevents unnecessary power loss in always-on automotive subsystems. The T4F20AHM3/H maintains this specification across its full -65 °C to +185 °C operating range, verified per AEC-Q101 test conditions.
T4F20AHM3/H Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-219AB
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 17.1V
- Voltage - Breakdown (Min):
- 19V
- Voltage - Clamping (Max) @ Ipp:
- 27.7V
- Current - Peak Pulse (10/1000µs):
- 14.4A
- Power - Peak Pulse:
- 400W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 185°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-219AB (SMF)
T4F20AHM3/H FAQ
1.How can I place an order for T4F20AHM3/H through Aetrix?
Please submit a Request for Quotation (RFQ) for T4F20AHM3/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for T4F20AHM3/H reliable?
The price and inventory of T4F20AHM3/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for T4F20AHM3/H is usually 5 days.
3.What payment methods are accepted for T4F20AHM3/H?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for T4F20AHM3/H transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for T4F20AHM3/H?
T4F20AHM3/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your T4F20AHM3/H order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for T4F20AHM3/H?
For technical support, including T4F20AHM3/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your T4F20AHM3/H requirements.
6.How does Aetrix verify that T4F20AHM3/H is sourced from the original manufacturer or authorized distributors?
All T4F20AHM3/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that T4F20AHM3/H meets industry standards.
7.What is the process for return or replacement of T4F20AHM3/H?
All T4F20AHM3/H units undergo pre-shipment inspection (PSI). If there is an issue with T4F20AHM3/H, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The T4F20AHM3/H part is unused and in its original packaging.
Return procedure for T4F20AHM3/H:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
T4F20AHM3/H Tags

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Diodes Incorporated

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Toshiba Semiconductor and Storage

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