Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division T4F22AHM3/I

Part No.:
T4F22AHM3/I
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-219AB
Datasheet:
AetrixT4F22AHM3/I.pdf
Description:
LOW PROFILE OF 400W PAR TVS PROD
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:20,000

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

T4F22AHM3/I from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor in SMF (DO-219AB) package, rated for 22.0 V nominal breakdown voltage (VBR), 18.8 V stand-off voltage (VWM), 30.6 V maximum clamping voltage (VC) at 13.1 A peak pulse current, and 400 W peak pulse power with 10/1000 μs waveform - designed for automotive sensor signal line protection under high-reliability, high-temperature conditions.

For engineers reviewing the T4F22AHM3/I datasheet, T4F22AHM3/I pinout, T4F22AHM3/I application, or T4F22AHM3/I equivalent, key selection criteria include its AEC-Q101 qualification, TJ = 185 °C capability, unidirectional polarity, low-profile SOD-123W-compatible SMF package, and verified clamping performance in automotive transients.

Technical Context

This device operates as a unidirectional TVS diode optimized for fast transient suppression on sensitive signal lines. Its passivated anisotropic rectifier technology ensures stable VBR drift (αT = 0.084 %/°C) and low leakage (<1 μA at VWM) up to 150 °C junction temperature.

It delivers 400 W peak pulse power per 10/1000 μs waveform with thermal resistance RthJA ≤ 160 °C/W on FR4 PCB, enabling robust surge handling in compact automotive ECUs and sensor modules where space and thermal margin are constrained.

Key Specifications

ParameterValue and Actual Design Meaning
VBR (Nominal)22.0 V - precise breakdown threshold ensuring reliable triggering before downstream IC damage
VWM18.8 V - maximum continuous reverse operating voltage compatible with 12 V automotive supply rails
VC @ IPPM30.6 V - clamping voltage at 13.1 A limits stress on protected circuitry during ISO 7637-2 pulses
PPPM400 W - peak pulse power rating validated for 10/1000 μs transients per IEC 61000-4-5
TJ max.185 °C - enables operation in under-hood environments without derating loss
AEC-Q101Qualified - certified for automotive-grade reliability including temperature cycling and HTRB
PackageSMF (DO-219AB) - low-profile, halogen-free, RoHS-compliant surface-mount case with cathode band marking

Pinout & Package

Package: SMF (DO-219AB), 2-terminal surface-mount device with matte tin-plated leads, cathode denoted by color band. Compatible with SOD-123W footprint per JEDEC outline.

Pin/TerminalCircuit RoleDesign Meaning
AnodeCurrent return path during clampingConnected to ground or low-impedance reference; forms low-inductance discharge path with cathode
CathodeTransient voltage input nodeConnected to protected signal line; absorbs positive-going surges relative to anode reference

Key Features

FeatureDesign Value
Junction passivationStable VBR drift (0.084 %/°C) and <1 μA leakage at 150 °C enable long-term reliability in hot environments
TJ = 185 °C capabilityEliminates thermal derating in engine control units and ADAS sensor housings exposed to ambient >125 °C
AEC-Q101 qualificationValidated for automotive use including HTGB, HTRB, and temperature cycling per stress test plan
400 W peak pulse powerWithstands repeated ISO 7637-2 Pulse 1, 2a, and 5a transients without degradation
MSL Level 1Reflow-solderable at 260 °C peak without moisture-induced failure; no bake required pre-assembly

Applications

Automotive Sensor Signal ProtectionEngine Control Unit (ECU) Power Input

Use Scenario: Protecting LIN/CAN sensor signal lines (e.g., crankshaft position, oxygen sensor) from load dump and inductive switching transients in 12 V systems.

IC Role / Device Role / Timing Role: Unidirectional TVS clamping device placed between signal line and chassis ground, triggered within nanoseconds of overvoltage onset.

Use Value: Limits clamped voltage to 30.6 V, preventing damage to 3.3 V or 5 V interface ICs while maintaining signal integrity below VWM = 18.8 V.

Use Scenario: Safeguarding ECU 12 V input rail against ISO 7637-2 Pulse 5a (load dump) events up to 60 V/100 ms.

IC Role / Device Role / Timing Role: Primary front-end transient suppressor mounted directly at connector entry point, shunting surge energy to ground.

Use Value: Withstands 400 W peak pulse power and maintains <1 μA leakage at 18.8 V, avoiding parasitic drain in always-on vehicle networks.

ADAS Camera Module InterfaceBody Control Module (BCM) LIN Bus

Use Scenario: Shielding FPD-Link III or GMSL serial video interfaces in rear-view cameras from ESD and cable discharge events.

IC Role / Device Role / Timing Role: Low-capacitance unidirectional TVS placed inline with differential data pairs, referenced to local ground plane.

Use Value: Clamps sub-100 ns ESD transients to <30.6 V without distorting high-speed video signals due to optimized junction design.

Use Scenario: Securing LIN bus physical layer in door modules and seat controllers against battery reversal and jump-start transients.

IC Role / Device Role / Timing Role: Bidirectional protection not required; unidirectional T4F22AHM3/I used with series resistor to handle positive-only surges on LIN master/slave lines.

Use Value: Leverages 185 °C rating to survive under-dash thermal environments while meeting LIN spec VWM margin requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SMAJ22A-E3/57TSame VBR (22 V), but SMA package (DO-214AC); RthJA = 195 °C/W vs. 160 °C/W; lower PPPM derating above 75 °CLess suitable for under-hood use above 125 °C ambient due to higher thermal resistanceSelect T4F22AHM3/I when TJ > 150 °C operation or MSL Level 1 reflow is required
1.5SMC22AHigher PPPM (1500 W), but larger SMC (DO-214AB) package; VC = 33.2 V at 45.5 A; not AEC-Q101 qualifiedUsed in industrial power supplies, not automotive; lacks automotive qualification and high-temp stabilitySelect T4F22AHM3/I for AEC-Q101 compliance, compact layout, and guaranteed 185 °C operation

Compared with SMAJ22A-E3/57T and 1.5SMC22A, the T4F22AHM3/I offers superior thermal performance in confined spaces, guaranteed automotive qualification, and tighter VBR tolerance - making it the preferred choice for next-generation automotive electronics where size, temperature, and reliability are co-constrained.

Availability

T4F22AHM3/I is available at Aetrix Electronics and suitable for automotive sensor protection, ECU power input safeguarding, and ADAS camera interface hardening requiring stable component supply across production lifecycles.

Supply support for T4F22AHM3/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and TVS devices with emphasis on reliability, thermal performance, and automotive qualification.

The T4F22AHM3/I belongs to Vishay's PAR® family of high-temperature TVS diodes, engineered specifically for automotive signal and power line protection where AEC-Q101 compliance and 185 °C junction capability are mandatory.

FAQ

What is the breakdown voltage tolerance for T4F22AHM3/I?

The T4F22AHM3/I has a breakdown voltage (VBR) range of 20.9 V (min) to 23.1 V (max) at 1.0 mA test current, with 22.0 V nominal. This ±5% tolerance ensures consistent clamping behavior across production lots and supports robust design margins for 12 V automotive systems where VWM = 18.8 V provides adequate headroom.

Is T4F22AHM3/I suitable for bidirectional transient protection?

No, the T4F22AHM3/I is unidirectional only. It protects against positive-going transients relative to the anode (ground). For bidirectional protection - such as AC lines or data buses subject to both polarities - a separate bidirectional TVS like SMBJ22CA would be required. The T4F22AHM3/I datasheet explicitly states "Unidirectional only" in its features section.

Does T4F22AHM3/I meet lead-free and RoHS requirements?

Yes, the T4F22AHM3/I carries the HM3 suffix, confirming it is halogen-free, RoHS-compliant, and qualified to JESD201 Class 2 whisker resistance. Its matte tin-plated terminals comply with J-STD-002 and JESD22-B102 solderability standards, and the molding compound meets UL 94 V-0 flammability rating.

What is the maximum clamping voltage of T4F22AHM3/I at rated peak pulse current?

The T4F22AHM3/I has a maximum clamping voltage (VC) of 30.6 V at 13.1 A peak pulse current (IPPM) under 10/1000 μs waveform conditions. This value is measured per Figure 3 in the datasheet and defines the upper voltage limit imposed on protected circuitry during worst-case surge events.

Can T4F22AHM3/I be used in reflow soldering processes?

Yes, the T4F22AHM3/I is fully compatible with standard reflow soldering, rated for maximum peak temperature of 260 °C per J-STD-020. It meets MSL Level 1, meaning it can be stored indefinitely at ambient conditions without baking prior to assembly - simplifying manufacturing logistics for high-volume automotive production.

T4F22AHM3/I Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-219AB
Series:
PAR®
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
18.8V
Voltage - Breakdown (Min):
20.9V
Voltage - Clamping (Max) @ Ipp:
30.6V
Current - Peak Pulse (10/1000µs):
13.1A
Power - Peak Pulse:
400W
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-65°C ~ 185°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-219AB (SMF)

T4F22AHM3/I FAQ

1.How can I place an order for T4F22AHM3/I through Aetrix?

Please submit a Request for Quotation (RFQ) for T4F22AHM3/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for T4F22AHM3/I reliable?

The price and inventory of T4F22AHM3/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for T4F22AHM3/I is usually 5 days.

3.What payment methods are accepted for T4F22AHM3/I?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for T4F22AHM3/I transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for T4F22AHM3/I?

T4F22AHM3/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your T4F22AHM3/I order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for T4F22AHM3/I?

For technical support, including T4F22AHM3/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your T4F22AHM3/I requirements.

6.How does Aetrix verify that T4F22AHM3/I is sourced from the original manufacturer or authorized distributors?

All T4F22AHM3/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that T4F22AHM3/I meets industry standards.

7.What is the process for return or replacement of T4F22AHM3/I?

All T4F22AHM3/I units undergo pre-shipment inspection (PSI). If there is an issue with T4F22AHM3/I, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The T4F22AHM3/I part is unused and in its original packaging.

Return procedure for T4F22AHM3/I:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

T4F22AHM3/I Tags

  • T4F22AHM3/I
  • T4F22AHM3/I PDF
  • T4F22AHM3/I Datasheet
  • T4F22AHM3/I Specifications
  • T4F22AHM3/I Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division T4F22AHM3/I
  • Buy T4F22AHM3/I
  • T4F22AHM3/I Price
  • T4F22AHM3/I Distributor
  • T4F22AHM3/I Supplier
  • T4F22AHM3/I Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER