Vishay General Semiconductor - Diodes Division T4F30AHM3/I
- Part No.:
- T4F30AHM3/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-219AB
- Datasheet:
-
T4F30AHM3/I.pdf
- Description:
- LOW PROFILE OF 400W PAR TVS PROD
- Quantity:
- Payment:

- Shipping:

Inventory:19,850
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Product details
Overview
T4F30AHM3/I from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor in SMF (DO-219AB) package, rated for 30 V breakdown voltage (VBR), 400 W peak pulse power (10/1000 μs), and 185 °C maximum junction temperature - designed for automotive-grade overvoltage protection of sensor signal lines and MOSFET gate drivers.
For engineers reviewing the T4F30AHM3/I datasheet, T4F30AHM3/I pinout, T4F30AHM3/I application, or T4F30AHM3/I equivalent, this page delivers verified electrical specs, AEC-Q101 qualification status, clamping performance at 9.7 A IPPM, thermal resistance data, and real-world use context for high-reliability automotive electronics design.
Technical Context
The T4F30AHM3/I employs passivated anisotropic rectifier technology with junction passivation optimized for stable operation up to TJ = 185 °C, enabling robust surge immunity in under-hood automotive environments. Its unidirectional configuration provides precise reverse-biased clamping without forward conduction during normal operation.
It delivers 41.4 V maximum clamping voltage (VC) at 9.7 A peak pulse current (IPPM) under 10/1000 μs waveform, with 0.088 %/°C temperature coefficient of VBR and 1.0 μA max reverse leakage at 25.6 V stand-off voltage (VWM).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/typ/max) | 28.5 / 30.0 / 31.5 V - ensures reliable triggering above system operating voltage while avoiding false trips |
| VWM | 25.6 V - defines maximum continuous reverse voltage before leakage exceeds 1.0 μA |
| VC @ IPPM | 41.4 V - clamping voltage limits protected circuit stress during 9.7 A transient events |
| PPPM | 400 W - peak pulse power handling capability per 10/1000 μs standard waveform |
| TJ max | +185 °C - enables operation in high-temperature automotive zones without derating |
| RthJA | 160 °C/W - thermal resistance to ambient on FR4 PCB informs heatsinking requirements |
| AEC-Q101 | Qualified - certified for automotive electronic systems per stress test standard |
Pinout & Package
Package: SMF (DO-219AB), low-profile surface-mount case with matte tin-plated leads, halogen-free, RoHS-compliant, and MSL Level 1 (260 °C reflow peak). Cathode denoted by color band.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry point during clamping | Connected to protected line; conducts surge current toward cathode when VBR exceeded |
| Cathode | Current exit point during clamping | Connected to ground or lower-potential rail; establishes reference for unidirectional clamping threshold |
Key Features
| Feature | Design Value |
|---|---|
| High-temperature junction rating | TJ = 185 °C supports under-hood deployment without thermal derating penalties |
| AEC-Q101 qualification | Validated reliability for automotive ECUs, ADAS sensors, and body control modules |
| Low-profile SOD-123W-compatible footprint | Enables space-constrained PCB layouts while maintaining mechanical robustness |
| Passivated anisotropic rectifier technology | Delivers stable VBR and low leakage across temperature and lifetime |
| Wave and reflow solderable | Compatible with standard SMT assembly processes including lead-free reflow profiles |
Applications
| Automotive Sensor Protection | Power MOSFET Gate Protection |
|---|---|
Use Scenario: Protecting analog output lines of pressure, temperature, and position sensors exposed to load-dump and inductive switching transients in engine control units. IC Role / Device Role / Timing Role: Unidirectional TVS diode placed between sensor output and ECU input to clamp surges before they reach precision ADC front-end. Use Value: Limits transient-induced offset errors and prevents latch-up in downstream signal conditioning ICs using 41.4 V clamping at 9.7 A. | Use Scenario: Safeguarding gate-source terminals of high-side N-channel MOSFETs in 12 V automotive power distribution modules. IC Role / Device Role / Timing Role: Fast-response voltage clamp absorbing Miller-induced spikes and gate drive overshoot during switching transitions. Use Value: Prevents gate oxide breakdown with 25.6 V stand-off margin and 0.088 %/°C VBR stability across -40 to +150 °C ambient. |
| Infotainment System Data Lines | Body Control Module I/O Protection |
Use Scenario: Shielding LIN bus and analog audio signal paths in head unit and display modules from ESD and board-level EMI coupling. IC Role / Device Role / Timing Role: Low-capacitance transient suppressor installed at connector interface to shunt fast transients before entering MCU GPIOs. Use Value: Maintains signal integrity with minimal loading due to DO-219AB package geometry and sub-100 pF junction capacitance at zero bias. | Use Scenario: Hardening microcontroller I/O pins driving relays, LEDs, and solenoids in door modules and lighting controllers subjected to ISO 7637-2 pulses. IC Role / Device Role / Timing Role: Primary overvoltage barrier absorbing repetitive 400 W surges induced by relay coil de-energization. Use Value: Ensures long-term reliability with 1.0 W steady-state power dissipation rating and AEC-Q101 qualification for 15-year vehicle service life. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ30A | Higher RthJA (190 °C/W), lower PPPM (400 W same but lower IPPM at same VC), SMA package | Larger footprint, less suitable for ultra-thin automotive modules | Select when legacy SMA layout exists and thermal budget allows higher junction rise |
| 1.5SMC30A | Higher VC (48.4 V), larger SMC package, 1.5 kW PPPM but slower response due to higher junction capacitance | Better for high-energy surges but unsuitable for fast signal-line protection | Prefer for bulk power rail clamping where speed is secondary to energy absorption |
Compared with SMAJ30A and 1.5SMC30A, the T4F30AHM3/I offers superior thermal performance (RthJM = 18 °C/W), tighter VBR tolerance (±5 % vs ±10 %), and smaller DO-219AB footprint - making it optimal for space- and temperature-constrained automotive signal protection.
Availability
T4F30AHM3/I is available at Aetrix Electronics and suitable for automotive sensor interfaces, power MOSFET gate protection, and body control module I/O circuits requiring stable component supply with AEC-Q101 compliance and extended temperature support.
Supply support for T4F30AHM3/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, and protection devices with emphasis on automotive, industrial, and computing applications.
The T4F30AHM3/I belongs to Vishay's PAR® series of high-reliability transient voltage suppressors, engineered specifically for automotive-grade surge immunity in harsh thermal and electrical environments.
FAQ
What is the breakdown voltage tolerance for T4F30AHM3/I?
The T4F30AHM3/I has a breakdown voltage (VBR) range of 28.5 V (min) to 31.5 V (max) at 1.0 mA test current, representing a ±5 % tolerance around the nominal 30.0 V value. This tight tolerance ensures consistent clamping behavior across production lots and supports precise system-level surge margining in automotive designs.
Is T4F30AHM3/I qualified for automotive applications?
Yes, the T4F30AHM3/I is AEC-Q101 qualified and meets MSL Level 1 per J-STD-020 with a maximum reflow peak of 260 °C. It is rated for operation from -65 °C to +185 °C junction temperature, making it suitable for under-hood and safety-critical automotive subsystems including ADAS sensors and power distribution modules.
What is the maximum clamping voltage of T4F30AHM3/I at rated surge current?
The T4F30AHM3/I exhibits a maximum clamping voltage (VC) of 41.4 V at 9.7 A peak pulse current (IPPM) under the standard 10/1000 μs waveform. This value is guaranteed across temperature and ensures protected circuits remain within safe voltage margins during ISO 7637-2 Pulse 1 and Pulse 2a events.
Does T4F30AHM3/I support lead-free reflow soldering?
Yes, the T4F30AHM3/I is fully compatible with lead-free reflow soldering processes, including JEDEC-standard profiles with a maximum peak temperature of 260 °C. Its matte tin-plated terminals meet J-STD-002 and JESD 22-B102 solderability requirements, and the HM3 suffix confirms compliance with JESD 201 Class 2 whisker testing.
What package type does T4F30AHM3/I use and what are its key mechanical features?
The T4F30AHM3/I uses the SMF (DO-219AB) package - a low-profile surface-mount case measuring 2.9 mm × 1.4 mm × 1.08 mm. Key features include UL 94 V-0 molding compound, cathode identification via color band, and compatibility with SOD-123W footprint standards, enabling drop-in replacement in space-constrained automotive PCBs.
T4F30AHM3/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-219AB
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 25.6V
- Voltage - Breakdown (Min):
- 28.5V
- Voltage - Clamping (Max) @ Ipp:
- 41.4V
- Current - Peak Pulse (10/1000µs):
- 9.7A
- Power - Peak Pulse:
- 400W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 185°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-219AB (SMF)
T4F30AHM3/I FAQ
1.How can I place an order for T4F30AHM3/I through Aetrix?
Please submit a Request for Quotation (RFQ) for T4F30AHM3/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for T4F30AHM3/I reliable?
The price and inventory of T4F30AHM3/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for T4F30AHM3/I is usually 5 days.
3.What payment methods are accepted for T4F30AHM3/I?
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4.How is shipping managed for T4F30AHM3/I?
T4F30AHM3/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your T4F30AHM3/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for T4F30AHM3/I?
For technical support, including T4F30AHM3/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your T4F30AHM3/I requirements.
6.How does Aetrix verify that T4F30AHM3/I is sourced from the original manufacturer or authorized distributors?
All T4F30AHM3/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that T4F30AHM3/I meets industry standards.
7.What is the process for return or replacement of T4F30AHM3/I?
All T4F30AHM3/I units undergo pre-shipment inspection (PSI). If there is an issue with T4F30AHM3/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The T4F30AHM3/I part is unused and in its original packaging.
Return procedure for T4F30AHM3/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
T4F30AHM3/I Tags

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