Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division T4F30AHM3/I

Part No.:
T4F30AHM3/I
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-219AB
Datasheet:
AetrixT4F30AHM3/I.pdf
Description:
LOW PROFILE OF 400W PAR TVS PROD
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:19,850

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

T4F30AHM3/I from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor in SMF (DO-219AB) package, rated for 30 V breakdown voltage (VBR), 400 W peak pulse power (10/1000 μs), and 185 °C maximum junction temperature - designed for automotive-grade overvoltage protection of sensor signal lines and MOSFET gate drivers.

For engineers reviewing the T4F30AHM3/I datasheet, T4F30AHM3/I pinout, T4F30AHM3/I application, or T4F30AHM3/I equivalent, this page delivers verified electrical specs, AEC-Q101 qualification status, clamping performance at 9.7 A IPPM, thermal resistance data, and real-world use context for high-reliability automotive electronics design.

Technical Context

The T4F30AHM3/I employs passivated anisotropic rectifier technology with junction passivation optimized for stable operation up to TJ = 185 °C, enabling robust surge immunity in under-hood automotive environments. Its unidirectional configuration provides precise reverse-biased clamping without forward conduction during normal operation.

It delivers 41.4 V maximum clamping voltage (VC) at 9.7 A peak pulse current (IPPM) under 10/1000 μs waveform, with 0.088 %/°C temperature coefficient of VBR and 1.0 μA max reverse leakage at 25.6 V stand-off voltage (VWM).

Key Specifications

ParameterValue and Actual Design Meaning
VBR (min/typ/max)28.5 / 30.0 / 31.5 V - ensures reliable triggering above system operating voltage while avoiding false trips
VWM25.6 V - defines maximum continuous reverse voltage before leakage exceeds 1.0 μA
VC @ IPPM41.4 V - clamping voltage limits protected circuit stress during 9.7 A transient events
PPPM400 W - peak pulse power handling capability per 10/1000 μs standard waveform
TJ max+185 °C - enables operation in high-temperature automotive zones without derating
RthJA160 °C/W - thermal resistance to ambient on FR4 PCB informs heatsinking requirements
AEC-Q101Qualified - certified for automotive electronic systems per stress test standard

Pinout & Package

Package: SMF (DO-219AB), low-profile surface-mount case with matte tin-plated leads, halogen-free, RoHS-compliant, and MSL Level 1 (260 °C reflow peak). Cathode denoted by color band.

Pin/TerminalCircuit RoleDesign Meaning
AnodeCurrent entry point during clampingConnected to protected line; conducts surge current toward cathode when VBR exceeded
CathodeCurrent exit point during clampingConnected to ground or lower-potential rail; establishes reference for unidirectional clamping threshold

Key Features

FeatureDesign Value
High-temperature junction ratingTJ = 185 °C supports under-hood deployment without thermal derating penalties
AEC-Q101 qualificationValidated reliability for automotive ECUs, ADAS sensors, and body control modules
Low-profile SOD-123W-compatible footprintEnables space-constrained PCB layouts while maintaining mechanical robustness
Passivated anisotropic rectifier technologyDelivers stable VBR and low leakage across temperature and lifetime
Wave and reflow solderableCompatible with standard SMT assembly processes including lead-free reflow profiles

Applications

Automotive Sensor ProtectionPower MOSFET Gate Protection

Use Scenario: Protecting analog output lines of pressure, temperature, and position sensors exposed to load-dump and inductive switching transients in engine control units.

IC Role / Device Role / Timing Role: Unidirectional TVS diode placed between sensor output and ECU input to clamp surges before they reach precision ADC front-end.

Use Value: Limits transient-induced offset errors and prevents latch-up in downstream signal conditioning ICs using 41.4 V clamping at 9.7 A.

Use Scenario: Safeguarding gate-source terminals of high-side N-channel MOSFETs in 12 V automotive power distribution modules.

IC Role / Device Role / Timing Role: Fast-response voltage clamp absorbing Miller-induced spikes and gate drive overshoot during switching transitions.

Use Value: Prevents gate oxide breakdown with 25.6 V stand-off margin and 0.088 %/°C VBR stability across -40 to +150 °C ambient.

Infotainment System Data LinesBody Control Module I/O Protection

Use Scenario: Shielding LIN bus and analog audio signal paths in head unit and display modules from ESD and board-level EMI coupling.

IC Role / Device Role / Timing Role: Low-capacitance transient suppressor installed at connector interface to shunt fast transients before entering MCU GPIOs.

Use Value: Maintains signal integrity with minimal loading due to DO-219AB package geometry and sub-100 pF junction capacitance at zero bias.

Use Scenario: Hardening microcontroller I/O pins driving relays, LEDs, and solenoids in door modules and lighting controllers subjected to ISO 7637-2 pulses.

IC Role / Device Role / Timing Role: Primary overvoltage barrier absorbing repetitive 400 W surges induced by relay coil de-energization.

Use Value: Ensures long-term reliability with 1.0 W steady-state power dissipation rating and AEC-Q101 qualification for 15-year vehicle service life.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SMAJ30AHigher RthJA (190 °C/W), lower PPPM (400 W same but lower IPPM at same VC), SMA packageLarger footprint, less suitable for ultra-thin automotive modulesSelect when legacy SMA layout exists and thermal budget allows higher junction rise
1.5SMC30AHigher VC (48.4 V), larger SMC package, 1.5 kW PPPM but slower response due to higher junction capacitanceBetter for high-energy surges but unsuitable for fast signal-line protectionPrefer for bulk power rail clamping where speed is secondary to energy absorption

Compared with SMAJ30A and 1.5SMC30A, the T4F30AHM3/I offers superior thermal performance (RthJM = 18 °C/W), tighter VBR tolerance (±5 % vs ±10 %), and smaller DO-219AB footprint - making it optimal for space- and temperature-constrained automotive signal protection.

Availability

T4F30AHM3/I is available at Aetrix Electronics and suitable for automotive sensor interfaces, power MOSFET gate protection, and body control module I/O circuits requiring stable component supply with AEC-Q101 compliance and extended temperature support.

Supply support for T4F30AHM3/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, and protection devices with emphasis on automotive, industrial, and computing applications.

The T4F30AHM3/I belongs to Vishay's PAR® series of high-reliability transient voltage suppressors, engineered specifically for automotive-grade surge immunity in harsh thermal and electrical environments.

FAQ

What is the breakdown voltage tolerance for T4F30AHM3/I?

The T4F30AHM3/I has a breakdown voltage (VBR) range of 28.5 V (min) to 31.5 V (max) at 1.0 mA test current, representing a ±5 % tolerance around the nominal 30.0 V value. This tight tolerance ensures consistent clamping behavior across production lots and supports precise system-level surge margining in automotive designs.

Is T4F30AHM3/I qualified for automotive applications?

Yes, the T4F30AHM3/I is AEC-Q101 qualified and meets MSL Level 1 per J-STD-020 with a maximum reflow peak of 260 °C. It is rated for operation from -65 °C to +185 °C junction temperature, making it suitable for under-hood and safety-critical automotive subsystems including ADAS sensors and power distribution modules.

What is the maximum clamping voltage of T4F30AHM3/I at rated surge current?

The T4F30AHM3/I exhibits a maximum clamping voltage (VC) of 41.4 V at 9.7 A peak pulse current (IPPM) under the standard 10/1000 μs waveform. This value is guaranteed across temperature and ensures protected circuits remain within safe voltage margins during ISO 7637-2 Pulse 1 and Pulse 2a events.

Does T4F30AHM3/I support lead-free reflow soldering?

Yes, the T4F30AHM3/I is fully compatible with lead-free reflow soldering processes, including JEDEC-standard profiles with a maximum peak temperature of 260 °C. Its matte tin-plated terminals meet J-STD-002 and JESD 22-B102 solderability requirements, and the HM3 suffix confirms compliance with JESD 201 Class 2 whisker testing.

What package type does T4F30AHM3/I use and what are its key mechanical features?

The T4F30AHM3/I uses the SMF (DO-219AB) package - a low-profile surface-mount case measuring 2.9 mm × 1.4 mm × 1.08 mm. Key features include UL 94 V-0 molding compound, cathode identification via color band, and compatibility with SOD-123W footprint standards, enabling drop-in replacement in space-constrained automotive PCBs.

T4F30AHM3/I Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-219AB
Series:
PAR®
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
25.6V
Voltage - Breakdown (Min):
28.5V
Voltage - Clamping (Max) @ Ipp:
41.4V
Current - Peak Pulse (10/1000µs):
9.7A
Power - Peak Pulse:
400W
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-65°C ~ 185°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-219AB (SMF)

T4F30AHM3/I FAQ

1.How can I place an order for T4F30AHM3/I through Aetrix?

Please submit a Request for Quotation (RFQ) for T4F30AHM3/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for T4F30AHM3/I reliable?

The price and inventory of T4F30AHM3/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for T4F30AHM3/I is usually 5 days.

3.What payment methods are accepted for T4F30AHM3/I?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for T4F30AHM3/I transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for T4F30AHM3/I?

T4F30AHM3/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your T4F30AHM3/I order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for T4F30AHM3/I?

For technical support, including T4F30AHM3/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your T4F30AHM3/I requirements.

6.How does Aetrix verify that T4F30AHM3/I is sourced from the original manufacturer or authorized distributors?

All T4F30AHM3/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that T4F30AHM3/I meets industry standards.

7.What is the process for return or replacement of T4F30AHM3/I?

All T4F30AHM3/I units undergo pre-shipment inspection (PSI). If there is an issue with T4F30AHM3/I, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The T4F30AHM3/I part is unused and in its original packaging.

Return procedure for T4F30AHM3/I:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

T4F30AHM3/I Tags

  • T4F30AHM3/I
  • T4F30AHM3/I PDF
  • T4F30AHM3/I Datasheet
  • T4F30AHM3/I Specifications
  • T4F30AHM3/I Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division T4F30AHM3/I
  • Buy T4F30AHM3/I
  • T4F30AHM3/I Price
  • T4F30AHM3/I Distributor
  • T4F30AHM3/I Supplier
  • T4F30AHM3/I Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER