My Inquiry
My Account
Vishay General Semiconductor - Diodes Division T4F33AHM3/I
- Part No.:
- T4F33AHM3/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-219AB
- Datasheet:
-
T4F33AHM3/I.pdf
- Description:
- LOW PROFILE OF 400W PAR TVS PROD
- Quantity:
- Payment:
- Shipping:
Inventory:17,800
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
T4F33AHM3/I from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor in SMF (DO-219AB) package, rated for 33.0 V breakdown voltage (VBR), 400 W peak pulse power (10/1000 μs), and 185 °C maximum junction temperature - designed to protect automotive sensor signal lines and MOSFET gates against inductive switching transients and lightning-induced surges.
For engineers reviewing the T4F33AHM3/I datasheet, T4F33AHM3/I pinout, T4F33AHM3/I application, or T4F33AHM3/I equivalent, this page delivers verified electrical specs, AEC-Q101 qualification status, thermal derating behavior, clamping performance at IPPM, and real-world automotive ESD/surge protection use context.
Technical Context
The T4F33AHM3/I employs passivated anisotropic rectifier technology with junction passivation optimized for high-reliability operation up to TJ = 185 °C. Its unidirectional configuration provides low-clamping-voltage surge suppression with VC = 45.7 V at IPPM = 8.8 A (10/1000 μs), and exhibits a typical VBR temperature coefficient of +0.089 %/°C.
It meets JESD22-B102 solderability standards and JESD201 Class 2 whisker resistance, with matte tin-plated terminals and UL 94 V-0 molding compound. The device is qualified per AEC-Q101 and rated MSL Level 1 (260 °C peak reflow).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/typ/max) | 31.4 / 33.0 / 34.7 V - defines precise voltage threshold at which clamping initiates under 1 mA test current |
| VWM | 28.2 V - maximum continuous reverse working voltage before leakage exceeds 1 μA at 25 °C |
| VC @ IPPM | 45.7 V - clamped voltage during 400 W surge event, limiting stress on protected downstream ICs |
| PPPM | 400 W - peak pulse power handling capability with standardized 10/1000 μs waveform |
| TJ max | +185 °C - enables reliable operation in under-hood automotive environments without thermal derating penalties |
| αT | +0.089 %/°C - quantifies positive VBR drift with temperature, critical for high-temp design margining |
| AEC-Q101 | Qualified - confirms compliance with automotive-grade reliability stress testing including HTGB, HTRB, and TCT |
Pinout & Package
Package: SMF (DO-219AB), low-profile surface-mount case with cathode band marking; dimensions 3.9 × 2.7 × 1.3 mm (L × W × H); compatible with standard SOD-123W footprint.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry terminal during forward conduction | Connected to ground or low-impedance return path in unidirectional TVS configuration |
| Cathode | Current exit terminal during clamping | Connected to protected line (e.g., sensor output or MOSFET gate); color band identifies this terminal |
Key Features
| Feature | Design Value |
|---|---|
| High-temperature junction rating | 185 °C maximum operating temperature enables placement near hot engine control units without derating |
| AEC-Q101 qualification | Validated for automotive applications including powertrain, body electronics, and ADAS sensor interfaces |
| Low-profile SMF package | 1.3 mm height allows dense PCB layouts in space-constrained modules like ECUs and radar sensors |
| Halogen-free, RoHS-compliant construction | Meets global environmental regulations and supports lead-free reflow assembly with 260 °C peak profile |
| Optimized clamping ratio (VC/VBR) | 1.39 ratio ensures minimal overvoltage overshoot during fast transients while maintaining robust surge margin |
Applications
| Automotive Sensor Protection | Power MOSFET Gate Protection |
|---|---|
Use Scenario: Protecting analog output lines of pressure, temperature, and position sensors in engine control modules exposed to load dump and inductive kickback. IC Role / Device Role / Timing Role: Unidirectional TVS placed between sensor output and ground to clamp transients before they reach ADC input or microcontroller pin. Use Value: Limits voltage to ≤45.7 V during 400 W surges, preventing latch-up or permanent damage to 5 V or 3.3 V signal chain components. | Use Scenario: Safeguarding gate-source terminals of N-channel power MOSFETs used in automotive DC-DC converters and motor drivers. IC Role / Device Role / Timing Role: TVS connected directly across MOSFET gate and source to absorb Miller-induced spikes and prevent unintended turn-on or oxide breakdown. Use Value: Withstand 8.8 A peak surge current while clamping to 45.7 V, preserving gate oxide integrity and ensuring reliable switching under harsh EMI conditions. |
| Infotainment System Data Lines | Body Control Module (BCM) Inputs |
Use Scenario: Shielding LIN bus or analog audio signal paths in head units and display modules from ESD events and board-level noise coupling. IC Role / Device Role / Timing Role: Low-capacitance TVS installed at connector interface to shunt fast transients before entering sensitive audio codecs or LIN transceivers. Use Value: Maintains signal fidelity due to minimal parasitic capacitance and achieves <1 μA leakage at 28.2 V, avoiding DC loading on low-current sensor signals. | Use Scenario: Protecting digital inputs (e.g., door switch, lamp status, HVAC actuator feedback) in BCMs subjected to battery reversal and jump-start transients. IC Role / Device Role / Timing Role: Unidirectional TVS placed on each input line referenced to chassis ground to suppress negative-going transients and positive surges simultaneously via system grounding strategy. Use Value: Operates reliably from –65 °C to +185 °C, supporting cold-cranking and under-hood thermal cycling without parameter shift or failure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ33A-E3/5AT | Higher RthJA (170 °C/W vs. 135–160 °C/W), lower PPPM (400 W same but derates faster above 25 °C), SMA package (larger footprint) | Less suitable for high-density automotive modules requiring DO-219AB's 3.9 mm length and 1.3 mm height | Select when legacy SMA footprint compatibility is required and thermal margin permits higher ambient rise |
| TPSMF33A | Same SMF package, identical VBR range and PPPM, but lower AEC-Q101 test coverage (no HTRB at 175 °C) and no JESD201 Class 2 whisker rating | Acceptable for non-safety-critical interior modules but not recommended for powertrain or ADAS where long-term whisker resistance is mandated | Choose only if cost sensitivity outweighs full AEC-Q101 compliance and extended temperature reliability requirements |
Compared with SMAJ33A-E3/5AT and TPSMF33A, the T4F33AHM3/I delivers superior thermal resistance, guaranteed AEC-Q101 qualification including HTRB at 175 °C, and JESD201 Class 2 whisker resistance - making it the preferred choice for mission-critical automotive electronics where long-term reliability under thermal cycling and vibration is non-negotiable.
Availability
T4F33AHM3/I is available at Aetrix Electronics and suitable for automotive sensor protection, power MOSFET gate safeguarding, and body control module input conditioning requiring stable component supply across production lifecycles.
Supply support for T4F33AHM3/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on high-reliability and automotive-grade solutions.
The T4F33AHM3/I belongs to Vishay's PAR® series of high-temperature TVS diodes, engineered specifically for automotive electronics demanding AEC-Q101 qualification, 185 °C operation, and robust surge immunity in harsh under-hood environments.
FAQ
What is the exact breakdown voltage tolerance for T4F33AHM3/I?
The T4F33AHM3/I has a specified breakdown voltage range of 31.4 V (minimum) to 34.7 V (maximum) at 1.0 mA test current, with 33.0 V as the nominal value. This ±5% tolerance is measured per ANSI/IEEE C62.35 standards and confirmed in the Vishay datasheet revision 14-Feb-2023. All units shipped meet this specification at 25 °C ambient, and the T4F33AHM3/I maintains stable VBR across its full operating temperature range due to its +0.089 %/°C temperature coefficient.
Is T4F33AHM3/I qualified for automotive use per AEC-Q101?
Yes, the T4F33AHM3/I is fully AEC-Q101 qualified, as explicitly stated in the Vishay datasheet (Document Number: 87645, Revision: 14-Feb-2023). It has passed all required stress tests including high-temperature reverse bias (HTRB) at 175 °C, high-temperature gate bias (HTGB), temperature cycling (TCT), and mechanical shock. The HM3 suffix denotes halogen-free, RoHS-compliant, and AEC-Q101-qualified construction - confirming its suitability for automotive powertrain, chassis, and ADAS applications.
What is the clamping voltage of T4F33AHM3/I under a 400 W surge?
The T4F33AHM3/I clamps to 45.7 V when subjected to its rated 400 W peak pulse power with a 10/1000 μs waveform. This corresponds to a peak pulse current (IPPM) of 8.8 A, as verified in the Electrical Characteristics table. The clamping voltage is measured at the device terminals under standardized surge conditions and represents the maximum voltage seen by downstream circuitry - a critical parameter for ensuring protected ICs remain within absolute maximum ratings during transient events.
Does T4F33AHM3/I support lead-free reflow soldering?
Yes, the T4F33AHM3/I is fully compatible with lead-free reflow soldering processes, with a maximum peak temperature rating of 260 °C per J-STD-020. Its matte tin-plated terminals meet JESD 22-B102 solderability requirements, and the device is rated MSL Level 1, meaning it can be stored indefinitely at ambient conditions without baking prior to assembly. The HM3 suffix confirms compliance with JEDEC JESD201 Class 2 whisker resistance, ensuring long-term interconnect reliability after reflow.
What package type does T4F33AHM3/I use and what are its key mechanical features?
The T4F33AHM3/I uses the SMF (DO-219AB) package: a low-profile surface-mount case measuring 3.9 mm × 2.7 mm × 1.3 mm with a cathode band marking. It features UL 94 V-0 flammability-rated molding compound, matte tin-plated leads, and is compatible with standard SOD-123W footprints. The package supports wave and reflow soldering, and its compact size enables high-density placement in automotive ECUs and sensor modules where board space is constrained.
T4F33AHM3/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-219AB
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 28.2V
- Voltage - Breakdown (Min):
- 31.4V
- Voltage - Clamping (Max) @ Ipp:
- 45.7V
- Current - Peak Pulse (10/1000µs):
- 8.8A
- Power - Peak Pulse:
- 400W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 185°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-219AB (SMF)
T4F33AHM3/I FAQ
1.How can I place an order for T4F33AHM3/I through Aetrix?
Please submit a Request for Quotation (RFQ) for T4F33AHM3/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for T4F33AHM3/I reliable?
The price and inventory of T4F33AHM3/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for T4F33AHM3/I is usually 5 days.
3.What payment methods are accepted for T4F33AHM3/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for T4F33AHM3/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for T4F33AHM3/I?
T4F33AHM3/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your T4F33AHM3/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for T4F33AHM3/I?
For technical support, including T4F33AHM3/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your T4F33AHM3/I requirements.
6.How does Aetrix verify that T4F33AHM3/I is sourced from the original manufacturer or authorized distributors?
All T4F33AHM3/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that T4F33AHM3/I meets industry standards.
7.What is the process for return or replacement of T4F33AHM3/I?
All T4F33AHM3/I units undergo pre-shipment inspection (PSI). If there is an issue with T4F33AHM3/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The T4F33AHM3/I part is unused and in its original packaging.
Return procedure for T4F33AHM3/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
T4F33AHM3/I Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
