Vishay General Semiconductor - Diodes Division T4F36AHM3/H
- Part No.:
- T4F36AHM3/H
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-219AB
- Datasheet:
-
T4F36AHM3/H.pdf
- Description:
- LOW PROFILE OF 400W PAR TVS PROD
- Quantity:
- Payment:

- Shipping:

Inventory:20,618
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Product details
Overview
T4F36AHM3/H from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor (TVS) in the eSMP® Series, designed for automotive-grade overvoltage protection. It features a 36.0 V nominal breakdown voltage (VBR), 400 W peak pulse power (10/1000 μs), 49.9 V maximum clamping voltage at 8.0 A surge current, and operates up to 185 °C junction temperature in the SMF (DO-219AB) package.
For engineers reviewing the T4F36AHM3/H datasheet, T4F36AHM3/H pinout, T4F36AHM3/H application, or T4F36AHM3/H equivalent, this device is selected for high-reliability automotive sensor line protection where low-profile SOD-123W-compatible packaging, AEC-Q101 qualification, and stable clamping under thermal stress are critical design requirements.
Technical Context
The T4F36AHM3/H employs passivated anisotropic rectifier technology with junction passivation optimized for high-temperature stability. Its unidirectional architecture provides precise reverse-biased clamping during transients induced by inductive switching or ESD events on signal lines.
It delivers 400 W peak pulse power per 10/1000 μs waveform with a maximum clamping voltage of 49.9 V at 8.0 A, and maintains operation across -65 °C to +185 °C junction temperature range-enabling use in under-hood automotive environments without derating penalties below 150 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (Nominal) | 36.0 V - Ensures reliable triggering above system stand-off voltage of 30.8 V while avoiding false trips during normal operation. |
| VC @ IPPM | 49.9 V - Clamps transient energy to protect downstream ICs and MOSFETs rated ≤ 50 V. |
| PPPM | 400 W - Handles automotive load-dump and ISO 7637-2 pulse 5a surges without failure. |
| IPPM | 8.0 A - Peak surge current capability aligned with 10/1000 μs test waveform per ANSI/IEEE C62.35. |
| TJ max. | 185 °C - Supports placement near high-temperature components (e.g., engine control units) without thermal derating. |
| Package | SMF (DO-219AB) - Low-profile 2.9 mm × 1.3 mm footprint compatible with SOD-123W PCB layouts and automated assembly. |
| AEC-Q101 | Qualified - Meets stress test requirements for automotive electronic components including temperature cycling and HTRB. |
Pinout & Package
Package: SMF (DO-219AB), surface-mount, halogen-free, RoHS-compliant, matte tin-plated terminals. Cathode indicated by color band.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction path / transient return path | Connected to protected circuit ground or low-side reference; completes clamping loop during overvoltage event. |
| Cathode | Clamping node / high-side connection | Connected to protected signal or power line; conducts when reverse voltage exceeds VBR, diverting surge current to ground. |
Key Features
| Feature | Design Value |
|---|---|
| High-temperature operation | Rated for continuous operation up to 185 °C junction temperature-eliminates need for thermal margining in engine bay designs. |
| AEC-Q101 qualification | Validated for automotive reliability including HTGB, HTRB, and temperature cycling-reduces qualification effort for Tier 1 suppliers. |
| Low-profile SMF package | 2.9 mm × 1.3 mm footprint with 0.85 mm height-enables compact placement on dense sensor PCBs without interfering with connectors or shields. |
| Stable clamping performance | 0.090 %/°C temperature coefficient of VBR ensures predictable trigger voltage across full operating range. |
| Wave/reflow solderable | Compatible with standard lead-free reflow profiles up to 260 °C peak-supports high-volume manufacturing without special process adjustments. |
Applications
| Automotive Sensor Protection | Power Line Surge Suppression |
|---|---|
Use Scenario: Protecting CAN bus transceivers and analog sensor outputs (e.g., oxygen, pressure) from load dump and inductive switching transients in vehicle ECUs. IC Role / Device Role / Timing Role: Unidirectional TVS diode placed between signal line and ground to clamp reverse-polarity surges before they reach sensitive input stages. Use Value: Prevents latch-up or permanent damage to 3.3 V/5 V interface ICs by limiting transient voltage to ≤ 49.9 V at 8.0 A. | Use Scenario: Safeguarding 12 V supply rails feeding microcontrollers and communication modules against ISO 7637-2 Pulse 5a (load dump) events. IC Role / Device Role / Timing Role: Primary clamping device on main power input, absorbing up to 400 W of transient energy within 1 ms. Use Value: Enables robust power rail design without oversized capacitors or secondary protection stages due to fast response and stable VC. |
| Industrial Motor Control Inputs | Automotive Lighting Driver Protection |
Use Scenario: Shielding digital I/O lines connected to motor drivers from back-EMF spikes generated during PWM switching in HVAC or seat actuator systems. IC Role / Device Role / Timing Role: Fast-reacting unidirectional suppressor placed at connector entry point to shunt inductive kickback to chassis ground. Use Value: Maintains signal integrity and prevents false triggering of logic inputs by clamping transients within 1 ns response time. | Use Scenario: Protecting LED driver ICs and current-sense resistors in adaptive front lighting systems (AFS) exposed to battery reversal and jump-start surges. IC Role / Device Role / Timing Role: Reverse-polarity and overvoltage protector on input stage, leveraging unidirectional behavior to block negative excursions while clamping positive spikes. Use Value: Eliminates need for separate polarity protection diodes-reduces BOM count and PCB area while meeting OEM surge immunity specs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ36A-HF | Same VBR (36.0 V) and PPPM (400 W), but SMA package (DO-214AC); RthJA = 140 °C/W vs. 135–160 °C/W for T4F36AHM3/H. | Higher profile (2.7 mm height) and larger footprint (4.5 mm × 2.7 mm); less suitable for space-constrained automotive sensor modules. | Select when legacy SMA layout exists and thermal margin allows higher RthJA. |
| 1.5SMC36A | Same VBR and PPPM, but SMC package (DO-214AB); 1.5 kW rating implies different test conditions-actual 10/1000 μs rating is 400 W, matching T4F36AHM3/H. | Larger body (7.1 mm × 6.2 mm); not AEC-Q101 qualified; intended for industrial, not automotive, use. | Select only for non-automotive applications where AEC-Q101 is not required and board space permits. |
Compared with SMAJ36A-HF and 1.5SMC36A, the T4F36AHM3/H offers superior automotive suitability via AEC-Q101 qualification, lower profile, and tighter thermal resistance control-making it the preferred choice for new automotive designs requiring long-term reliability and compact integration.
Availability
T4F36AHM3/H is available at Aetrix Electronics and suitable for automotive sensor protection, 12 V power rail surge suppression, and industrial motor control I/O conditioning requiring stable component supply, traceable sourcing, and lifecycle continuity.
Supply support for T4F36AHM3/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on reliability, efficiency, and application-specific optimization.
The T4F36AHM3/H belongs to Vishay's eSMP® Series of PAR® TVS diodes-engineered specifically for high-temperature, high-reliability automotive electronics where consistent clamping performance and AEC-Q101 compliance are mandatory.
FAQ
What is the breakdown voltage tolerance for T4F36AHM3/H?
The T4F36AHM3/H has a breakdown voltage (VBR) range of 34.2 V (min) to 37.8 V (max) at 1.0 mA test current, with 36.0 V nominal. This ±5% tolerance ensures predictable clamping onset across production lots while maintaining compatibility with 30.8 V stand-off voltage (VWM) and 49.9 V clamping limit-critical for protecting 3.3 V and 5 V interface ICs without false triggering.
Is T4F36AHM3/H suitable for bidirectional transient protection?
No, the T4F36AHM3/H is unidirectional only. Its internal structure is optimized for reverse-biased clamping and does not provide symmetrical protection for both polarities. For bidirectional applications-such as AC signal lines or USB data lines-engineers must select a dedicated bidirectional TVS like the SMBJ36CA or consult Vishay's bidirectional PAR® series. Using T4F36AHM3/H in bidirectional configurations risks failure during positive transients.
What is the maximum clamping voltage of T4F36AHM3/H at its rated surge current?
The T4F36AHM3/H exhibits a maximum clamping voltage (VC) of 49.9 V at 8.0 A peak pulse current (IPPM) under 10/1000 μs waveform conditions. This value is guaranteed across the full operating temperature range and directly determines the voltage stress imposed on downstream components-enabling safe protection of 50 V-rated ICs and MOSFETs in automotive power and signal paths.
Does T4F36AHM3/H require derating at elevated ambient temperatures?
Yes, T4F36AHM3/H must be derated above 25 °C ambient per Figure 2 in the datasheet. Its peak pulse power decreases linearly with increasing junction temperature, reaching ~70% of 400 W at 125 °C ambient (assuming typical PCB thermal resistance). However, its 185 °C maximum junction temperature allows full-rated operation in high-temperature zones when board-level thermal design maintains TJ ≤ 185 °C.
How is the HM3 suffix reflected in T4F36AHM3/H's compliance and testing?
The HM3 suffix in T4F36AHM3/H denotes halogen-free, RoHS-compliant construction with matte tin-plated leads that meet J-STD-002 and JESD 22-B102 solderability standards, plus JESD 201 Class 2 whisker resistance. It also confirms AEC-Q101 qualification-verified through HTGB, HTRB, and temperature cycling tests-ensuring suitability for automotive production environments where material purity and long-term interconnect reliability are mandated.
T4F36AHM3/H Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-219AB
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 30.8V
- Voltage - Breakdown (Min):
- 34.2V
- Voltage - Clamping (Max) @ Ipp:
- 49.9V
- Current - Peak Pulse (10/1000µs):
- 8A
- Power - Peak Pulse:
- 400W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 185°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-219AB (SMF)
T4F36AHM3/H FAQ
1.How can I place an order for T4F36AHM3/H through Aetrix?
Please submit a Request for Quotation (RFQ) for T4F36AHM3/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for T4F36AHM3/H reliable?
The price and inventory of T4F36AHM3/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for T4F36AHM3/H is usually 5 days.
3.What payment methods are accepted for T4F36AHM3/H?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for T4F36AHM3/H transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for T4F36AHM3/H?
T4F36AHM3/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your T4F36AHM3/H order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for T4F36AHM3/H?
For technical support, including T4F36AHM3/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your T4F36AHM3/H requirements.
6.How does Aetrix verify that T4F36AHM3/H is sourced from the original manufacturer or authorized distributors?
All T4F36AHM3/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that T4F36AHM3/H meets industry standards.
7.What is the process for return or replacement of T4F36AHM3/H?
All T4F36AHM3/H units undergo pre-shipment inspection (PSI). If there is an issue with T4F36AHM3/H, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The T4F36AHM3/H part is unused and in its original packaging.
Return procedure for T4F36AHM3/H:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
T4F36AHM3/H Tags

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Diodes Incorporated

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Diodes Incorporated

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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