My Inquiry
My Account
Vishay General Semiconductor - Diodes Division T4F36AHM3/I
- Part No.:
- T4F36AHM3/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-219AB
- Datasheet:
-
T4F36AHM3/I.pdf
- Description:
- LOW PROFILE OF 400W PAR TVS PROD
- Quantity:
- Payment:
- Shipping:
Inventory:19,856
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
T4F36AHM3/I from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor (TVS) in the eSMP® Series, designed for automotive-grade overvoltage protection of signal lines and power rails. It features a 36.0 V nominal breakdown voltage (VBR), 400 W peak pulse power (10/1000 μs), 49.9 V maximum clamping voltage at 8.0 A IPPM, and operates up to +185 °C junction temperature. It is AEC-Q101 qualified and housed in the SMF (DO-219AB) package.
For engineers reviewing the T4F36AHM3/I datasheet, T4F36AHM3/I pinout, T4F36AHM3/I application, or T4F36AHM3/I equivalent, key selection criteria include its unidirectional polarity, low-profile SOD-123W-compatible footprint, TJ = 185 °C capability, MSL Level 1 rating, and verified clamping performance under automotive load-dump and ESD surge conditions.
Technical Context
This TVS diode uses passivated anisotropic rectifier technology optimized for high-temperature stability and low leakage. Its unidirectional architecture provides precise reverse-biased clamping with 1.0 mA test current and 0.090 %/°C VBR temperature coefficient.
The device delivers 400 W peak pulse power per 10/1000 μs waveform while maintaining 30.8 V stand-off voltage (VWM) and <1.0 μA reverse leakage at TJ = 150 °C - enabling robust protection in automotive sensor interfaces and power supply inputs without false triggering.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (Nominal) | 36.0 V - ensures reliable turn-on above system operating voltage while avoiding conduction during normal operation |
| VWM | 30.8 V - maximum continuous reverse working voltage compatible with 24 V automotive systems |
| VC @ IPPM | 49.9 V - clamps transients to safe levels for downstream 48 V-tolerant ICs and MOSFETs |
| PPPM | 400 W - sustains high-energy surges from inductive switching and ISO 7637-2 Pulse 5a without degradation |
| TJ max. | +185 °C - supports under-hood placement and long-term reliability in high-ambient automotive environments |
| AEC-Q101 | Qualified - meets stress-test requirements for automotive electronic components including HTGB, HTRB, and TCT |
| Package | SMF (DO-219AB) - low-profile, halogen-free, RoHS-compliant case with matte tin-plated leads and JESD201 Class 2 whisker resistance |
Pinout & Package
Package: SMF (DO-219AB), surface-mount, single-diode configuration with cathode indicated by color band. Dimensions: 3.9 mm × 2.7 mm × 1.08 mm (L × W × H).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction terminal | Connected to ground or lower-potential rail; enables clamping when cathode voltage exceeds VBR |
| Cathode | Reverse-biased clamping terminal | Connected to protected line (e.g., CAN_H, LIN, sensor supply); conducts only during overvoltage events |
Key Features
| Feature | Design Value |
|---|---|
| Junction passivation | Optimized anisotropic rectifier design reduces leakage drift and improves long-term stability at 150–185 °C |
| MSL Level 1 | Rated for reflow up to 260 °C peak - eliminates moisture sensitivity concerns and pre-bake requirements |
| Low-profile footprint | Compatible with SOD-123W PCB land pattern - enables drop-in replacement in space-constrained modules |
| Halogen-free & RoHS | HM3 suffix confirms compliance with JEDEC J-STD-020 and environmental regulations for automotive production |
| Wave/reflow solderable | Matte tin plating meets J-STD-002 and JESD22-B102 - supports automated assembly without solderability degradation |
Applications
| Automotive Sensor Protection | 24 V Power Rail Clamping |
|---|---|
Use Scenario: Protecting analog output sensors (e.g., pressure, temperature) from load-dump transients and ESD in engine control units. IC Role / Device Role / Timing Role: Unidirectional TVS placed between sensor VSUPPLY and ground to clamp positive-going surges before they reach precision amplifier inputs. Use Value: Maintains 30.8 V stand-off margin below typical 24 V nominal rail while clamping to 49.9 V - preventing latch-up or damage to 5 V or 3.3 V signal-conditioning ICs. |
Use Scenario: Safeguarding 24 V supply inputs of body control modules (BCM) against ISO 7637-2 Pulse 5a (load dump) events. IC Role / Device Role / Timing Role: Primary front-end surge suppressor on main power input, placed upstream of DC/DC converters and LDOs. Use Value: Absorbs 400 W peak energy at 8.0 A surge current without thermal runaway, leveraging 185 °C TJ rating for sustained operation in hot under-hood environments. |
| CAN Bus Line Protection | Infotainment Interface Protection |
Use Scenario: Shielding high-speed CAN FD transceivers from ESD (IEC 61000-4-2) and fast transients on CAN_H/CAN_L lines. IC Role / Device Role / Timing Role: Low-capacitance unidirectional TVS connected between each bus line and chassis ground to divert ESD without distorting signal integrity. Use Value: Delivers sub-1 μA leakage at 30.8 V and fast response (<1 ns) - preserving CAN bit timing and minimizing signal reflection in 5 Mbps networks. |
Use Scenario: Protecting USB, LVDS, or FPD-Link III interfaces in head units and display modules from cable discharge events. IC Role / Device Role / Timing Role: Point-of-entry TVS on differential data lines, leveraging compact DO-219AB size to fit tight routing near connectors. Use Value: Enables layout with minimal trace length to ground, reducing parasitic inductance and ensuring clamping voltage stays within IC absolute maximum ratings (e.g., ±30 V for USB PHYs). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ36A-E3/5A (Vishay) | Same VBR (36 V), but SMA (DO-214AC) package; higher RthJA (150 °C/W vs. 135 °C/W); 400 W rating at 25 °C only | Larger footprint; less suitable for high-density automotive modules requiring DO-219AB's 3.9 mm × 2.7 mm area | Select T4F36AHM3/I when board space, thermal performance, or AEC-Q101 qualification under extended temperature cycling is critical. |
| 1.5SMC36A (ON Semiconductor) | Same VBR, but SMC (DO-214AB) package; 1500 W rating (10/1000 μs); higher VC (58.1 V); not AEC-Q101 qualified | Better for high-energy industrial surges; unsuitable for automotive qualification-critical designs | Choose T4F36AHM3/I for automotive Tier-1 applications requiring documented AEC-Q101 compliance and 185 °C operation. |
Compared with SMAJ36A-E3/5A and 1.5SMC36A, the T4F36AHM3/I offers superior thermal resistance (135 °C/W), smaller footprint, guaranteed AEC-Q101 qualification, and tighter VBR tolerance (±5 %), making it optimal for space-constrained, high-reliability automotive electronics where long-term parametric stability matters.
Availability
T4F36AHM3/I is available at Aetrix Electronics and suitable for automotive sensor protection, 24 V power rail clamping, and CAN bus interface protection requiring stable component supply across production lifecycles.
Supply support for T4F36AHM3/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, rectifiers, and protection devices for automotive, industrial, and computing markets.
The T4F36AHM3/I belongs to Vishay's eSMP® PAR® TVS family, engineered specifically for AEC-Q101-compliant, high-temperature automotive surge protection with emphasis on low-profile packaging and stable clamping performance.
FAQ
What is the exact breakdown voltage range for T4F36AHM3/I?
The T4F36AHM3/I has a guaranteed breakdown voltage (VBR) range of 34.2 V (min) to 37.8 V (max) at 1.0 mA test current, with a nominal value of 36.0 V. This specification is measured per ANSI/IEEE C62.35 and confirmed in the Vishay datasheet revision 14-Feb-2023, Document Number 87645. The T4F36AHM3/I maintains this tolerance across its full operating temperature range.
Is T4F36AHM3/I AEC-Q101 qualified, and what tests does that cover?
Yes, the T4F36AHM3/I is AEC-Q101 qualified - explicitly stated in the Vishay datasheet under "MECHANICAL DATA" and "NOTES" sections. Qualification covers stress tests including High-Temperature Reverse Bias (HTRB), High-Temperature Gate Bias (HTGB), Temperature Cycling (TCT), and Unbiased Highly Accelerated Stress Test (UHAST), all performed per AEC-Q101 Rev D requirements for discrete semiconductors.
What is the maximum clamping voltage of T4F36AHM3/I at its rated peak pulse current?
The T4F36AHM3/I exhibits a maximum clamping voltage (VC) of 49.9 V at its rated peak pulse current (IPPM) of 8.0 A, tested with a 10/1000 μs waveform. This value is specified in the "ELECTRICAL CHARACTERISTICS" table of the official datasheet and represents the upper limit of voltage seen by protected circuitry during worst-case surge events.
Does T4F36AHM3/I support lead-free reflow soldering, and what is its MSL rating?
Yes, the T4F36AHM3/I supports lead-free reflow soldering with a maximum peak temperature of 260 °C and is rated MSL Level 1 per J-STD-020. Its matte tin-plated terminals comply with J-STD-002 and JESD22-B102, and the HM3 suffix confirms halogen-free, RoHS-compliant construction - eliminating need for dry-packaging or bake-out prior to assembly.
How does the thermal resistance of T4F36AHM3/I compare to standard SMA packages?
The T4F36AHM3/I has a typical junction-to-ambient thermal resistance (RthJA) of 135 °C/W when mounted on a FR4 PCB with 2 oz. copper, which is 15 °C/W lower than typical SMA (DO-214AC) packages like SMAJ36A. This improved thermal performance allows the T4F36AHM3/I to sustain higher average power dissipation in compact automotive modules without exceeding its 185 °C maximum junction temperature.
T4F36AHM3/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-219AB
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 30.8V
- Voltage - Breakdown (Min):
- 34.2V
- Voltage - Clamping (Max) @ Ipp:
- 49.9V
- Current - Peak Pulse (10/1000µs):
- 8A
- Power - Peak Pulse:
- 400W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 185°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-219AB (SMF)
T4F36AHM3/I FAQ
1.How can I place an order for T4F36AHM3/I through Aetrix?
Please submit a Request for Quotation (RFQ) for T4F36AHM3/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for T4F36AHM3/I reliable?
The price and inventory of T4F36AHM3/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for T4F36AHM3/I is usually 5 days.
3.What payment methods are accepted for T4F36AHM3/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for T4F36AHM3/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for T4F36AHM3/I?
T4F36AHM3/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your T4F36AHM3/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for T4F36AHM3/I?
For technical support, including T4F36AHM3/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your T4F36AHM3/I requirements.
6.How does Aetrix verify that T4F36AHM3/I is sourced from the original manufacturer or authorized distributors?
All T4F36AHM3/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that T4F36AHM3/I meets industry standards.
7.What is the process for return or replacement of T4F36AHM3/I?
All T4F36AHM3/I units undergo pre-shipment inspection (PSI). If there is an issue with T4F36AHM3/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The T4F36AHM3/I part is unused and in its original packaging.
Return procedure for T4F36AHM3/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
T4F36AHM3/I Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
