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Vishay General Semiconductor - Diodes Division T4F43AHM3/I
- Part No.:
- T4F43AHM3/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-219AB
- Datasheet:
-
T4F43AHM3/I.pdf
- Description:
- LOW PROFILE OF 400W PAR TVS PROD
- Quantity:
- Payment:
- Shipping:
Inventory:19,980
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Product details
Overview
T4F43AHM3/I from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor (TVS) in the eSMP® Series, designed for automotive-grade overvoltage protection. It features a 43.0 V nominal breakdown voltage (VBR), 36.8 V stand-off voltage (VWM), 59.3 V maximum clamping voltage (VC) at 6.7 A peak pulse current, 400 W peak pulse power (10/1000 µs), and operates up to +185 °C junction temperature - deployed on sensor signal lines and MOSFET gate drivers in engine control units.
For engineers reviewing the T4F43AHM3/I datasheet, T4F43AHM3/I pinout, T4F43AHM3/I application, or T4F43AHM3/I equivalent, this page delivers verified electrical ratings, SMF (DO-219AB) package dimensions, AEC-Q101 qualification status, thermal resistance data, and real-world automotive protection use cases - all confirmed from Vishay's official 87645 document revision 14-Feb-2023.
Technical Context
This TVS diode uses passivated anisotropic rectifier technology with junction passivation optimized for high-reliability operation under thermal stress. Its unidirectional configuration provides low-leakage reverse blocking up to 36.8 V while delivering precise clamping at 59.3 V under 6.7 A surge current (10/1000 µs waveform).
The device is rated for TJ = –65 °C to +185 °C, meets MSL Level 1 per J-STD-020 (260 °C peak reflow), and is wave/reflow solderable. Its SMF (DO-219AB) package enables compact placement on high-density PCBs while maintaining 135–160 °C/W junction-to-ambient thermal resistance on standard FR4 layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (Nominal) | 43.0 V - ensures reliable triggering above system operating voltage without false conduction |
| VWM | 36.8 V - maximum continuous reverse voltage before leakage exceeds 1 μA at 25 °C |
| VC @ IPPM | 59.3 V - clamps transients to protect downstream ICs when subjected to 6.7 A surge (10/1000 µs) |
| PPPM | 400 W - peak pulse power handling capability compliant with ISO 7637-2 and ISO 16750-2 test pulses |
| TJ max. | +185 °C - supports under-hood automotive applications without derating in high-temperature environments |
| Package | SMF (DO-219AB) - low-profile SMD outline with 2.9 mm × 1.3 mm footprint and 1.08 mm height for space-constrained layouts |
| AEC-Q101 | Qualified - validated for automotive electronics per stress test requirements including HTRB, HTGB, and temperature cycling |
Pinout & Package
Package: SMF (DO-219AB), surface-mount, halogen-free, RoHS-compliant, matte tin-plated leads. Cathode denoted by color band. Compatible with JEDEC-standard reflow profiles (peak 260 °C, MSL Level 1).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Low-side reference terminal | Connected to ground or low-voltage return path; forms clamping loop with cathode during transient events |
| Cathode | High-side protected node | Connected to protected line (e.g., sensor output); conducts surge current to ground when VAK exceeds VBR |
Key Features
| Feature | Design Value |
|---|---|
| 185 °C junction rating | Enables direct placement near heat sources (e.g., power stages in ADAS ECUs) without thermal derating penalties |
| 400 W peak pulse power | Withstands ISO 16750-2 Pulse 5a (load dump) and Pulse 1/2b (inductive switching) without failure |
| AEC-Q101 qualification | Validated for automotive production use across temperature, humidity, and mechanical stress test conditions |
| Low-profile SMF package | Reduces board area by >30% vs. SMA while maintaining comparable thermal performance and surge robustness |
| 0.092 %/°C VBR tempco | Ensures stable clamping threshold across full automotive temperature range (–40 °C to +150 °C ambient) |
Applications
| Automotive Sensor Protection | Engine Control Unit (ECU) Power Input |
|---|---|
Use Scenario: Protecting analog output lines of pressure, temperature, and position sensors exposed to load-dump and inductive kickback in 12 V vehicle networks. IC Role / Device Role / Timing Role: Unidirectional TVS placed between sensor output and microcontroller ADC input to clamp transients below 59.3 V. Use Value: Prevents ADC saturation and latch-up in automotive microcontrollers by limiting fault voltage to safe levels during ISO 7637-2 Pulse 1 and 2a events. | Use Scenario: Safeguarding 5 V/3.3 V regulator inputs in ECUs against battery line transients during cold-cranking and alternator load dump. IC Role / Device Role / Timing Role: Primary front-end TVS on main power rail upstream of LDOs/DC-DC converters to absorb 400 W surges. Use Value: Eliminates need for secondary TVS stages by sustaining full 400 W pulse energy without degradation, reducing BOM count and layout complexity. |
| MOSFET Gate Driver Protection | Infotainment System Data Lines |
Use Scenario: Shielding high-side/low-side gate drivers in motor control modules from cross-talk and inductive coupling during PWM switching. IC Role / Device Role / Timing Role: TVS placed across gate-source terminals to clamp dv/dt-induced spikes below MOSFET VGS(max) rating. Use Value: Prevents unintended turn-on and gate oxide damage by clamping sub-100 ns spikes to ≤59.3 V with <1 ns response time. | Use Scenario: ESD and surge protection on LIN bus or CAN FD signal lines in head units and display modules. IC Role / Device Role / Timing Role: Unidirectional TVS on signal pair to maintain DC bias integrity while shunting fast transients. Use Value: Maintains signal integrity with <0.5 pF junction capacitance at zero bias (per Fig. 4), avoiding data rate degradation on 1+ Mbps buses. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ43A-E3/57T (Vishay) | Same VBR (43 V), but SMA package (DO-214AC); RthJA = 180 °C/W vs. 135–160 °C/W; 400 W rating maintained | Larger footprint (4.5 × 2.7 mm) and higher thermal resistance limit high-power density designs | Select when legacy SMA layout exists or when higher surge repetition tolerance is needed due to larger junction mass |
| 1.5SMC43A (ON Semiconductor) | Same VBR/VC specs, but SMC (DO-214AB) package; not AEC-Q101 qualified; RthJA ≈ 170 °C/W | Not approved for automotive production; suitable only for industrial or consumer-grade systems | Choose for cost-sensitive non-automotive applications where AEC-Q101 is not mandated and board space allows larger SMC outline |
Compared with SMAJ43A-E3/57T and 1.5SMC43A, the T4F43AHM3/I offers superior thermal performance in a smaller footprint and is the only one qualified to AEC-Q101 - making it the preferred choice for new automotive designs requiring high reliability, compact layout, and production compliance.
Availability
T4F43AHM3/I is available at Aetrix Electronics and suitable for automotive sensor protection, engine control unit (ECU) power input conditioning, and MOSFET gate driver safeguarding requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for T4F43AHM3/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and optoelectronics with emphasis on high-reliability, high-efficiency, and automotive-qualified components.
The T4F43AHM3/I belongs to Vishay's eSMP® PAR® TVS family, engineered specifically for automotive-grade transient suppression in harsh environments - balancing ultra-low profile, high-temperature operation, and AEC-Q101 validation.
FAQ
What is the clamping voltage of the T4F43AHM3/I at its rated peak pulse current?
The T4F43AHM3/I has a maximum clamping voltage (VC) of 59.3 V when subjected to its rated peak pulse current of 6.7 A under the standard 10/1000 µs waveform. This value is measured per Figure 3 in Vishay document 87645 and ensures downstream circuitry remains within safe operating limits during surge events. The T4F43AHM3/I maintains this clamping performance across its full operating temperature range.
Is the T4F43AHM3/I qualified for automotive applications?
Yes, the T4F43AHM3/I is AEC-Q101 qualified, having passed rigorous stress tests including high-temperature reverse bias (HTRB), high-temperature gate bias (HTGB), and temperature cycling. Its 185 °C maximum junction temperature and MSL Level 1 reflow compatibility further validate its suitability for under-hood automotive systems. The T4F43AHM3/I is explicitly listed in Vishay's AEC-Q101 qualified products table.
What package does the T4F43AHM3/I use, and what are its key mechanical dimensions?
The T4F43AHM3/I uses the SMF (DO-219AB) package: a low-profile surface-mount outline measuring 2.9 mm × 1.3 mm with a maximum height of 1.08 mm. Its footprint requires 0.85 mm pad width and 2.7 mm pad length per side, per Vishay's recommended land pattern in document 87645. The T4F43AHM3/I's compact size reduces PCB area versus SMA/SMC alternatives while retaining 400 W surge capability.
Does the T4F43AHM3/I have polarity marking, and how is it identified?
Yes, the T4F43AHM3/I features a visible cathode band - a colored marking on the body that identifies the cathode terminal. Per Vishay's mechanical drawings and datasheet notes, the cathode end is oriented toward the band, and the anode is the opposite terminal. This polarity marking is critical for correct unidirectional installation in series with protected signal or power lines. The T4F43AHM3/I's polarity must be verified before PCB assembly to ensure proper clamping function.
What is the thermal resistance specification for the T4F43AHM3/I, and how does it impact layout design?
The T4F43AHM3/I has a typical junction-to-ambient thermal resistance (RthJA) of 135 °C/W and a maximum of 160 °C/W when mounted on a standard FR4 PCB with 2 oz. copper and recommended pad geometry. Its junction-to-mount (RthJM) is 15–18 °C/W. These values mean minimal copper pour is required for thermal management - unlike larger packages - enabling dense routing around the T4F43AHM3/I without thermal derating concerns in most automotive applications.
T4F43AHM3/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-219AB
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 36.8V
- Voltage - Breakdown (Min):
- 40.9V
- Voltage - Clamping (Max) @ Ipp:
- 59.3V
- Current - Peak Pulse (10/1000µs):
- 6.7A
- Power - Peak Pulse:
- 400W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 185°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-219AB (SMF)
T4F43AHM3/I FAQ
1.How can I place an order for T4F43AHM3/I through Aetrix?
Please submit a Request for Quotation (RFQ) for T4F43AHM3/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for T4F43AHM3/I reliable?
The price and inventory of T4F43AHM3/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for T4F43AHM3/I is usually 5 days.
3.What payment methods are accepted for T4F43AHM3/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for T4F43AHM3/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for T4F43AHM3/I?
T4F43AHM3/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your T4F43AHM3/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for T4F43AHM3/I?
For technical support, including T4F43AHM3/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your T4F43AHM3/I requirements.
6.How does Aetrix verify that T4F43AHM3/I is sourced from the original manufacturer or authorized distributors?
All T4F43AHM3/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that T4F43AHM3/I meets industry standards.
7.What is the process for return or replacement of T4F43AHM3/I?
All T4F43AHM3/I units undergo pre-shipment inspection (PSI). If there is an issue with T4F43AHM3/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The T4F43AHM3/I part is unused and in its original packaging.
Return procedure for T4F43AHM3/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
T4F43AHM3/I Tags
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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